JEDEC 22a119 低温存储

JEDECSTANDARDLowTemperatureStorageLifeJESD22-A119NOVEMBER2004JEDECSOLIDSTATETECHNOLOGYASSOCIATIONJEDECStandardNo.22A119Page1TestMethodA119TESTMETHODA119LOWTEMPERATURESTORAGELIFE(FromJEDECBoardBallotJCB-04-95,formulatedunderthecognizanceofJC-14.1SubcommitteeonReliabilityTestMethodsforPackagedDevices.)1ScopeThetestisapplicableforevaluation,screening,monitoring,and/orqualificationofallsolidstatedevices.LowTemperaturestoragetestistypicallyusedtodeterminetheeffectoftimeandtemperature,understorageconditions,forthermallyactivatedfailuremechanismsofsolidstateelectronicdevices,includingnonvolatilememorydevices(dataretentionfailuremechanisms).Duringthetestreducedtemperatures(testconditions)areusedwithoutelectricalstressapplied.Thistestmaybedestructive,dependingonTime,TemperatureandPackaging(ifany).2Apparatus2.1LowtemperaturestoragechambersTheapparatusrequiredforthistestshallconsistofacontrolledtemperaturechambercapableofmaintainingthespecifiedtemperatureovertheentiresamplepopulationundertest.2.2ElectricaltestequipmentElectricalequipmentcapableofperformingtheappropriatemeasurementsforthedevicesbeingtested,includingwriteandverifytherequireddataretentionpattern(s)fornonvolatilememories.JEDECStandardNo.22A119Page2TestMethodA1193Procedure3.1LowtemperaturestorageconditionsTheDevicesundertestshallbesubjectedtocontinuousstorageatoneoftheTemperatureConditionsofTable1.Table1—LowTemperaturestorageconditionsConditionA:-40(-10/+0)°CConditionB:-55(-10/+0)°CConditionC:-65(-10/+0)°CNOTECAUTIONshouldbeexercisedwhenselectinganacceleratedtestconditionsincetheacceleratedtemperatureusedmayexceedthecapabilitiesofthedeviceandmaterials,therebyinducingfailures(overstress)failuresthatwouldnotoccurundernormaluseconditions.Thedevicesmaybereturnedtoroomambientconditionsforinterimelectricalmeasurements.3.2MeasurementsUnlessotherwisespecified,interimandfinalelectricaltestmeasurementsshallbecompletedwithin96hoursafterremovalofthedevicesfromthespecifiedtestconditions.Intermediatemeasurementsareoptionalunlessotherwisespecified.Theelectricaltestmeasurementsshallconsistofparametricandfunctionaltestsspecifiedintheapplicableprocurementdocument.Fornonvolatilememories,thedataspecifieddataretentionpatternmustbewritteninitially,andthensubsequentlyverifiedwithoutre-writing.3.3FailurecriteriaAdevicewillbeconsideredaLowTemperatureStoragefailureifparametriclimitsareexceeded,oriffunctionalitycannotbedemonstratedundernominalandworst-caseconditions,asspecifiedintheapplicableprocurementdocument.Fornonvolatilememories,thespecifieddataretentionpatternshallbeverifiedbeforeandafterstorage.Amargintestmaybeusedtodetectdataretentiondegradation.Mechanicaldamage,suchascracking,chipping,orbreakingofthepackage,(asdefinedintestmethodB101“Externalvisual”)willbeconsideredafailure,providedthatsuchdamagewasnotinducedbyfixturesorhandlinganditiscriticaltothepackageperformanceinthespecificapplication.Cosmeticpackagedefectsanddegradationofleadfinish,orsolderabilityarenotconsideredvalidfailurecriteriaforthisstress.JEDECStandardNo.22A119Page3TestMethodA1194SummaryThefollowingdetailsshallbespecifiedintheapplicableprocurementdocument.a)Electricaltestmeasurements.b)Samplesizeandnumberoffailures(specifyzeroifnoneobserved).c)Timeandconditions,ifotherthan168hoursperconditionA.d)Intermediateelectricaltestmeasurements,ifrequired.e)Nonvolatilememorydataretentionpattern(forappropriatedevices)