半导体工艺Photo

IC工艺技术系列讲座第二讲PHOTOLITHOGRAPHY光刻讲座提要1.General2.Facility(动力环境)3.Mask(掩膜版)4.Processstephighlight(光刻工艺概述)5.BCD正胶工艺6.Historyand未来的光刻工艺1.GeneralMASKINGProcess(光刻工艺)Photolithography(光学光刻)----Transferatemporarypattern(resist)DefectcontrolCriticaldimensioncontrolAlignmentaccuracyCrosssectionprofileEtch(腐蚀)----Transferapermanentpattern(Oxide,Nitride,Metal…)2.0FacilityrequirementTemperature(温度)70oFHumidity(湿度)45%Positivepressure(正压)0.02in/H2OParticlecontrol(微粒)Class100Vibration(震动)Yellowlightenvironment(黄光区)DIwater(去离子水)17mhomCompressairandNitrogen(加压空气,氮气)Inhousevacuum(真空管道)3.0Mask(掩膜版)DesignPGtapeMaskmaking•Plate---quartz,LEglass,Sodalineglass•Coating---Chrome,Ionoxide,Emulsion•Equipment---E-beam,PatterngeneratorMaskstorage---AntistaticBoxPelliclePellicleprotection4.0光刻工艺概述1.PrebakeandHMDS(前烘)2.Resistcoating(涂胶)EBR(去胶边),softbake,3.Exposure(曝光)Alignment(校正)4.Develop(显影)Poste-bake,Hardbake,backsiderinse5.Developinspection(显检)4.1PrebakeandHMDStreatmentPurposeofPre-bakeandHMDStreatmentistoimprovetheresistadhesiononoxidewafer.HMDSisadhesionpromoterespeciallydesignedforpositiveresist.HMDS(Hexamethyldisilane)canbeappliedonthewafersby1.Vaporinabucket2.vaporinavacuumbox3.Directlydispenseonwafer4.YESsystem---inahotvacuumsystem5.Vaporinahotplate(withexhaust)ToomuchHMDSwillcausepoorspin,viceversawillcauseresistlifting4.2ResistCoating(涂胶)Resistcoatingspecification(指标）Thickness（厚度）0.7u–2.0u(3.0以上forPadlayer)Uniformity（均匀度）+50A–+200ASizeofEBR（去胶边尺寸）Particle（颗粒）20perwaferBacksidecontamination(背后污染）三个主要因数影响涂胶的结果1.ResistProduct(产品）Viscosity（粘度）2.SpinnerDispensemethod（涂胶方法）Spinnerspeed(RPM)（转速）Exhaust（排气）Softbaketemperature（烘温）3.FacilityTemperature（室温）Humility（湿度）4.2.1Coater(涂胶机）EquipmentmoduleandspecialfeaturePre-bakeandHMDS---Hot/ColdplateResistdispense---ResistpumpRPMaccuracy---MotorEBR---Top/bottomHotplate---softbaketemperatureaccuracyExhaustWastecollectionTemperature/HumiditycontrolhoodTransfersystem---ParticleandreliabilityProcessstepandprocessprogram---FlexibleSVG8800升降机涂胶HMDS热板冷板升降机升降机升降机涂胶热板热板升降机升降机升降机升降机涂胶热板冷板HMDS冷板冷板冷板涂胶热板热板升降机升降机显影热板热板热板冷板4.2.2Coater(涂胶机）combination4.2.3Coater(涂胶机）ResistdispensemethodsStaticDynamicRadialReverseradialResistpump(Volumecontrol---2cc/waferanddripping)Barrelpump---TritekDiaphragmpump---MilliporeN2pressurecontrolpump---IDLStepmotorcontrolpump---Cybotsizeofdispensehead4.2.4Coater(涂胶机）rpm(转速）andacceleration（加速）Maximumspeed---Upto10000rpmStability---daytodayAcceleration---controllablenumberofstepsReliability---timetoreplacementEBR(Edgebeadremoval)（清边）Method---TopEBRorBottomEBRorTopandbottomEBRProblem---DrippingChemical----Acetone,EGMEA,PGMEA,ETHLY-LACTATEResistTypeNegativeresistPositiveresistG-linei–linereverseimageTAC---topanti-reflectivecoatingBARLI---bottomanti-reflectivecoatingChemicalamplificationresistXrayresist4.3.1Exposure(曝光)Transferapatternfromthemask(reticle)toresistGoal1.CriticalDimensioncontrol(CD)条宽2.Alignment校准---Mis-alignment,runin/out3.Patterndistortion图样变形---Astigmatism4.Crosssectionprofile侧面形貌---sidewallangle5.Defectfree无缺陷Equipment/mask/resistselection1.Resolution分辨率---Exposecharacter,Lightsource(wavelength),N/A,2.Auto-alignmentskill自动校准技术---Lightfield,darkfield,laser3.Mask掩膜版---e-beammaster,sub-master,spotsize,quartzplate,defectdensity,CDrequirement4.Resistselection胶选择4.3.2Exposure(曝光)AlignerTechnology1.Contactprint(接触）Softcontact,hardcontact,proximity2.Scanner(扫描）3.Stepper(重复）1X,2X,4X,5X,10X4.Step–Scan(重复扫描)4X---reticlemove,wafermove,reticle/wafermove5.Xray(X光）1:16.E-beam(电子束）---Directwrite4.3.3Exposure(曝光)Contactprint(接触）1.Mostofusefornegativeresistprocess---for5uprocessandcanbepushto3u.2.Positiveresistcanprintsmallerthan3u,anddeepUVcanpushto1u,butveryhighdefect3.Equipment:---CanonPLA501---Cobilt---Kasper---K&SContactprint---Canon5014.3.4Exposure(曝光)Scanner(扫描）1.MostofuseforG–linePositiveresistprocess---for3uprocessandcanbepushto2u.2.Negativeresistcanprintsmallerthan4u3.Equipment:---CanonMPA500,600---PerkinElmer100,200,300,600,700,900PE240ScannerCanon600Scanner4.3.5Exposure(曝光)Stepper(重复）1.Glinepositiveresist---for0.8uprocess2.ilinepositiveresist---0.5uprocess3.ilineresistplusphase-shiftmask---canbepushedto0.354.deepUVresistprocess---0.35uandbelow5.Equipment:---Ultratech---Canon---Nikon---ASML4.3.6Exposure(曝光)6ASMLStepperlistModelWavelengthResolutionASML2500g0.8ASML5000ASML5500–20,22,25,60,60B,80,80Bi0.55ASML5500–100,100C,100D,150i0.45ASML5000–200,200B,250,250BUV0.35ASML5500–300,300B,C,D,TFHUV0.25ASML5500-900Step-ScanUV4.4.1Develop(显影）Developprocess1.Postexposebake2.ResistDevelop3.DIwaterrinse4.HardBakeDevelopequipment1.Batchdevelop2.TrackdevelopDevelopchemical1.KOH2.Metalfree(TMAH)---Tetramethylamoniahydroxide3.Wettingagent---with/without4.Concentration---2.38%TMAHTrackdevelopmethod1.Spray2.Steam3.Signal-Paddle4.Double-Paddle4.4.2Develop(显影）DevelopTrack1.TemperaturecontrolwaterjacketforDevelopline2.Developpump/developpressurecanister3.Exhaust4.Hotplatetemperaturecontrol5.Pre-wet---processprogram4.4.3Develop(显影）CDcontrolin