CELL制程

2004/8HKCLCDPROCESS2004/8HKCSOURCE:LG2004/8HKCCellAssemblySource:samsung2004/8HKCStageTFT/CFGlassSubstratePIRollerDoctorRollerAnilloxRollerAPRPlateCoatingAlignmentLayer2004/8HKCPIPrinting:CoatingPAAPrebaking:90~110oC/SolventevaporizedPostbaking:230~250oC/ImidizationPIPAA2004/8HKCStageTFT/CFGlassSubstratePIRubbingClothesRubbingProcess2004/8HKCRubbingstrength(R.S.)R.S.=N[1+2πr(R/60)/v]N:#ofRubbing:Rubbingdepth(mm)R:Rollerr.p.mr:Rollerdiameter(mm)V:Tablespeed(mm/sec)RubbingStrengthwillaffectpretiltangle!2004/8HKC2004/8HKCRubbingdirectionRubbingdirectionTFTSubstrateCFSubstrateLeftview(9o’clock)Rightview(3o’clock)Upview(12o’clock)Rubbingdirectionswillaffecttheviewingangle!2004/8HKCSealDispensing/PrintingSealant:EpoxycuredbyheatSource:samsung2004/8HKCDispensingShortPointsMaterial:Agparticles+EpoxycuredbyheatToconnectthecommonelectrodeonCFsidetoTFTside!Source:samsungSource:samsung2004/8HKCSpacerSprayingMaterial:PlasticBallsorSiOBallsSource:samsung2004/8HKCHotPressingofSealSource:samsung2004/8HKC2004/8HKCPanelScribingandBreakingSource:samsung2004/8HKCLiquidCrystalInjectionSource:samsung2004/8HKCEndSealMaterial:UVcurableSource:samsung2004/8HKCInspectionandPolarizerAttachingSource:samsung2004/8HKC2004/8HKC