130nm_CMOS_Logic_process_flow_introduction

10.13umCMOSlogicprocessintroduction2OutlineFrontendProcessSTI(ShallowTrenchIsolation)FormationWellDefinition/VtAdjustDualGate&SpacerFormationN/PMOS&SalicideFormationILD,CT&WCMPBackendProcessIMD&InterMetalProcessTopMetal&PassivationQ&A3LinerN-WellP-WellP+P+N+N+IMD1IMD2M2M1V1MTPAOXPASIONVIAALPadFront-end:DevicerelativeprocessBack-end:Multi-layermetalinterconnectTypical0.13LGX-section4FrontendProcessContent:1.STI(ShallowTrenchIsolation)Formation2.WellDefinition/VtAdjust3.DualGateFormation4.N/PMOS&SalicideFormationWTi/TiNN-WellP-WellP+P+N+N+1.STI2.Well3.Gate4.N/PMOS4.Salicide5BRIEFSTIFLOW110APadoxforhighstress1250ANitridefilmdep.1250ASiNforAAphotopatterningLineroxforSTIcornerroundingHightemp.annealforSTIetchdamagerecoveryHDPdep.fordeviceisolationHDPannealforHDPoxdensificationAA-PH/ETH3PO4PULLBACKAALinear110ASTIHDP6KDSTICMPSINRMSTICMPstoponSiN(SIN:750A-660A,OX6300A-4500A)RemainingSiNisanindexforSTICMPSTIcornerangle~82C,STIDepth:4300A6angledepthCDSiNSicornerroundingLinerOxTRENCHETCH&LINEROXIDE7HDPDep.HDPDep.withvoidHDPDEP.&VOID8P_WELL1Photo(Core1.2V)Implant:PWELLIMPBNCHANNEL1IMPBVTN1IMPDResistStrip+CRStripH2SO4+H2O2P_WELL2Photo(I/O3.3V)Implant:PWELL2IMPBNCHANNEL2IMPBResistStrip+CRStripH2SO4+H2O2P/NWELLimp.N_WELL1Photo(Core1.2V)Implant:NWELL1IMPPPCHANNEL1IMPPVTP1IMPAResistStrip+CRStripH2SO4+H2O2N_WELL2Photo(I/O3.3V)Implant:NWELL2IMPPPCHANNEL2IMPPVTP2IMPAResistStrip+CRStripH2SO4+H2O2WELLRTASTDCLEAN1000C;10sec(Samewith0.15&0.18um)91.2VNMOSP_WELL1NLDD13.3VNMOS1.2VPMOSN_WELL1PLDD13.3VPMOSGateox.=60A+14.5AGateox.=14.5ARemovethe1stGateoxNLB85AP_WELL2/NLDD2N_WELL2/PLDD2gateox.2gateox.1DUALGATE60Åthickgateoxide14.5Åthingateoxide1750ApolyPRGateox.1=60AWetdipGateox.2=14.5AGateox.1=58AGateox.1+2~70ANLB85A10ThinnerPRuseforbetterphotoresolution,butworseinetchprocessLargeCDcontrolbetterthansmallCDcontrolRTOPolyoxidationforthermalbudget&goodoxideprofilearoundpolygate(1015C,RTO21A)polyPR320ASiON150APEOXpolyPRpoly2.HMetch3.PRremovepoly4.Polyetchpoly5.SiONremove1.PolyPhotoPOLYHARDMASKETCH50:1HF,5sec+H3PO410minsNLH5AHPO550A11HereisadevicethatPolycrossAAregionPOLYSTIAAPolypatterning(6TSRAM)12N-WellP-WellNNPP1.NLDD1Photo(Core1.2V)PocketimplantIDPocketimplantIIBNLDD1ImpANLDD2ImpPResistorstrip2.PLDD2Photo(I/O3.3V)PLDD2implantFResistorstrip3.PLDD1Photo(Core1.2V)PocketimplantAPPOCKETIMP2PPLDD1implantFResistorstrip4.NLDD2Photo(I/O3.3V)NLDD2implantPResiststripPLDD1RTA950C10”N/PLDD13ONOSpacer•Preclean•LINING150TEOS•680C,150A(+-15A)•SiNSPACER•650C,SiN300A(+-30A)•COMPOSITETEOSSPACER•680C,TEOS400A(+-40A)•SPACERETCH•300ASIN/400ATEOS•Postclean/OxideStripN-WellP-WellNNPP14SpaceruseforLDDHotCarrierEffect&CTetchprotectONOSPACERPROFILEPMOS20/0.18NMOS20/0.18CoSi2Si3N4SpacerILDNitridePolyGateLinerTEOS15N+NPPhotoN+implant1AN+implant2PN+IMP3PResistStripN+RTA1030RTA005SP+PPPhotoP+Implant1BP+Implant2BResistStripN+&P+IMP.HighdoseN+/P+withlowresistorforcurrentconductive.N-WellP-WellP+N+N+P+NSD198maskPSD197maskNSDIMPPSDIMP16STDCleanSABDepositionSRO,350AP+RTAAnnealing1025C,5secSABPhotoSalicideBlockEtch:Dry+WetResistStripN-WellP-WellSalBlkPETEOSP+P+N+N+SALICIDEBLOCK(SAB)SABfornon-salicideregionuse,mostuseforhighpoly/AAresistor&ESDdevice.PureSABwetdipwillcausesmallerPRliftingeasily.N-WellP-WellP+N+N+P+17Pre-SalisideDip(100:1HF1min.):NDH25ASalicideDeposition:E30C10N20(Arsputter30A/Co100A/TiN200A)Salicide1stRTA500oC30secN2SalicideSelectiveEtch:NSC1480M2(APM8min+M220min.)Salicide2ndRTA840oC30secN2)N-WellP-WellCoSalicideP+P+N+N+CoSALICIDECoSalicideAAPolysalicidethk.&profilePoly18SION150ALRSIN300AILDHDPPSG9500ILDCMP(9000A-4750A)ILDPROCESSPESIONforPIDprotectionLRSINforCT-ETstoplayer0.13/0.12um0.13/0.15um0.13/0.18umVoidcausebyworseILDHDPgapfillN-WellP-WellP+N+N+P+SION150ALRSIN300AHDP4750A19CONTACT&W-PLUGCTDARC:SION/OX-600A/150ASCRUBBERCTPHOTOCTETCHCTASHER+WetstripCTgluelayer:(AR100A/IMP-TI100/CVD-TIN50)Tisilicideannealing:(690ºC,60s)WCVDDEP:(3000A,425C)WCMPforILDWTi/TiNN-WellP-WellP+P+N+N+WCMPremoveW&Ti/TiNN-WellP-WellP+N+N+P+SION150ALRSIN300AHDP4750A20Backendprocess----CuTechnologyALinterconnecttechnologyAluminumvs.CopperWhyCu?IntegrationschemesofDual-damasceneprocessCudualdamasceneprocesssequence21ALInterconnect•ALMetalstackdep:Ti/TiN/AL/Ti/TiN•DARCdep•M1PhotolithographytoformM1patternN-WellP-WellP+P+N+N+Met1Metal1ALPRARCTi/TiNALTi/TiNN-WellP-WellP+P+N+N+Met1M1AL•ALMetalETCH•Resiststrip•WetClean22ALvs.CuAlILDAlILDAlILDIMD1DamasceneRIE23WhyCu?24WhyCu?25Dual-damascenePRDARCIMDCuNitrideVIA1-PHOTOVIA1-ETCHMetal2-PHOTOMetal2-ETCH26VIAfirstv.s.LinefirstPhotoresistDARCIMDCuCucap-nitrideVIAfirstLinefirst27VIAfirstv.s.LinefirstLinetoviamisalignedFenceLinetoviamisalignedPartialVIA28IMD1DEPOSITION•PE-FSGDEP3300A•PE-SIONDEP600AWTi/TiNN-WellP-WellP+P+N+N+FSGSIONSINIMD129Metal1PHOTO&ETCHProcesssteps•DARCopen•FSGmainetch•LinerSiNetch•Photoresiststrip•WetcleanRequirements•Noresiduals•Straighterprofile:87ºN-WellP-WellP+P+N+N+IMD1ResistN-WellP-WellP+P+N+N+IMD1Processste