plasma原理资料

等离子技术讲座:等离子原理及其应用PLASMATRAININGPROGRAM•等离子技术在高级封装工业的应用ApplicationofPlasmaTechnologyinAdvancedPackagingIndustries.•等离子技术简介IntroductiontoPlasmaTechnology•March公司产品介绍ProductsofMarchPlasmaSystems•微电子工业MicroelectronicIndustry–Flash,EEPROM–DRAM,SRAM–Analog/Linear–Microcontrollers,Microprocessors,Microperipherals–ASIC•光电子工业OptoelectronicIndustry–LaserDiodes–FiberAssembly–HermeticPackaging–MEMS•印刷电路工业PrintedCircuitIndustry–PrintedCircuitBoard•不良的芯片粘结PoorDieAttach–InsufficientHeatDissipationDuetoPoorDieAttach•不良的导线连接强度PoorWireBondStrength–ContaminationonBondPad•覆晶填料FlipChipUnderfill–FilletHeightofUnderfill–VoidinFlipChipUnderfill•剥离Delamination–LaminateMaterialsReleasingMoisture–MetalLeadframeOxidation•印刷电路板孔中的残余物SmearinginPrintedCircuitBoards•打印记号Marking•表面污染物去除ContaminationRemoval–WireBonding–Encapsulation–BallAttach(ContaminationSources:Fluorine,NickelHydroxide,Photoresist,EpoxyPaste,OrganicSolventResidue,smearinPCB,andscum)•表面活化SurfaceActivation–DieAttach–Encapsulation–FlipChipUnderfill–Marking•表面改性和刻蚀SurfaceModificationandEtch–FluxlessSoldering–Claddinglayerremovalonfiber表面活化:芯片粘结SurfaceActivation:DieAttach•ProperDieAttachCritical–HeatDissipation–Delamination•PlasmaTreatmentofSubstratePriortoDieAttach–PromotesAdhesionofEpoxy–RemovesOxidationForGoodSolderReflow–BetterBondBetweenDieandSubstrate•BetterHeatDissipation•MinimizesDelamination污染物去除:导线连接ContaminationRemoval:WireBonding•PoorWireBondStrength–Contamination–Oxidation•SmallerBondPadPitches–80mmto25mm–HigherRatioofContaminationtoPadandWire•DeformationWeldingInhibitedBy–PhysicalProcess:ContaminantsActAsPhysicalBarrier–ChemicalProcess:ContaminantsFormBondsWithSurfacesandMinimizeAdhesion•EpoxyResinBleedout污染物去除:导线连接ContaminationRemoval:WireBonding•PlasmaProcessingRemovesTraceContaminationandOxidationFromSubstrates–Metal–Ceramic–Plastic•WireBondStrengthSignificantlyIncreased•ThroughputIncreased:LowerPressureRequired污染物去除和表面活化:封装ContaminationRemovalandSurfaceActivation:Encapsulation•MoldingCompoundMustAdhereToDifferentCompounds–SubstrateMaterial–SolderMask–Die–MetalBondPads•SeveralMaterialsBondingtoOneAnother•DelaminationCanResultFromPoorSurfaceActivityandContamination•DelaminationBiggestChallengeForOrganicBasedSubstrates–LaminateMaterialsAbsorbWaterFromAirandtheFluxResidueRemovalProcess–TrappedMoistureReleasedFromHighTemperatures:UseorSoldering•OxidationonMetalLeadframesCanInhibitAdhesionofFrametoMold•PlasmaTreatmentofBGAPackages,OtherPolymerSubstrates,andMetalLeadframes–ImprovesSurfaceActivity–AchievesGoodAdhesion–MinimizesDelamination污染物去除和表面活化:封装ContaminationRemovalandSurfaceActivation:Encapsulation表面活化:填料SurfaceActivation:Underfill•UnderfillRequiredinFlipChip–MinimizeThermalCoefficientofExpansion(CTE)MismatchBetweenDieandSubstrate•Challenge–VoidFree–WickingSpeed–DifficultwithLargeDiesandHighDensityBallPlacement•PlasmaTreatmentIncreasesSurfaceEnergy–PromotesAdhesion–IncreasingWickingSpeeds–DecreasedVoiding•PresenceofOxides–InhibitsWireBonding–LimitsGoodDieAttachment–InhibitsSolderReflow•PlasmaTreatmentReducesMetalOxides–ImprovesWireBondStrength–ImprovesDieAttachment–ImprovesSolderReflo•SmearinginPrintedCircuitBoards(PCB)–ViasMechanicallyorLaserDrilled–LaminateMaterial(EpoxyResin)IsSmearedOverEdgesOfInnerMetalConductorLines–SubsequentPlatingOfTheViasMustElectricallyConnectAllTheConductorLines–SmearedResinMustBeRemovedToEnsureGoodElectricalContact•PlasmaTreatmentRemovestheEpoxyResinsProducingCarbonDioxideandWater•ImprovesDieAttach•ImprovedWireBondStrengthWithMinimalProcessRequirements•EffectiveEncapsulationofMetalandOrganicBasedPackages•MinimizesVoidsinFlipChipUnderfill•DesmearinginPrintedCircuitBoards•SurfaceActivationofNumerousMaterials:Polymers,andMetals材料表面的活化•ThinFilmEtch:Al,Si,SiO2,Si3N4,W,WSix•OrganicRemoval去除有机污染物•OxideRemoval去除氧化物•ResidualFluorineRemoval去除氟的残物•Hydrophilation•Hydrophobation•Plasmapolymerization•PECVD关键参数CriticalProductParameters•ProductType处理方式–Metalvs.Laminate–ChemicalSensitivity–TemperatureSensitivity•ProductHandling产品放置–Magazine–SingleStrip•ProcessRequired工艺的要求–ContaminationRemoval–SurfaceActivation•Throughput产量的要求•Uniformity均匀性要求等离子工艺参数ParametersForPlasmaProcessing•PowerSupplyFrequencyandPower电源的功率和频率•ChamberandElectrodeConfiguration腔体的结构•Pressure气压•GasandConcentration工艺气体的选择•Time处理的时间•Pumping