功率MOSFET的基本原理

আ▲ୂӣ͹ԅࣤ359,+:ԽࣲஐࠉࠍԨב੼؍௺਒ޏਈ࢛ॠ܉Շي߄ஒҸ՛1ᆹ嗉㞮ࣤ359,+:ԽࣲࠍԨב਒ޏਈ࢛ॠ܉Շي١֫஬ࡌЉգঝֺԅࣤ֘ўङଠऀ௅ֿ㾯ᆹ嗉㞮ऀ௅ֿԅࣤ֘ўङՇيԷ३㞮ԅࣤԡحѽ֘ўӣঝ⭥࣋⭥ᆀಘԦ˄powerelectronicdevice˅——൘⭥䐟ѝˈᇎ⧠⭥㜭Ⲵਈᦒᡆ᧗ࡦⲴ⭥ᆀಘԦDŽ㾯ᆹ嗉㞮cdevice˅⭥ᆀಘԦDŽ*359඲඲ⴤሬ⭥-ৼᢙᮓ-䠁኎-≗ॆቲ-ॺሬփ-൪᭸Ღփ㇑Vertical-Doublediffused-Metal-Oxide-SemiconductorField-EffectTransistor,VDMOSFET嗉㞮㞮Ღ㞮փ㞮㇑㞮miconductorF9'026ะᵢ৕⨼Ă⭫㦭᝕ᓊmetalsemiconductorSiO2semiconductordOhmiccontact+metalsemiconductorSiO2semiconductordOhmiccontact-ӨӨӨӨӨӨӨӨӨ++++++++++ะᵢ৕⨼φ⭫㦭᝕ᓊ৕⨼miccontact+ᆹ嗉㞮嗉嗉嗉嗉嗉㞮嗉㞮嗉㞮SiO2ӨӨӨ++++++++++++ะ㾯ᵢ㾯৕㾯9'026ะᵢ৕⨼Ă31㔉㾯ᆹ嗉㞮9'026ٗҁԽֺࣲࣲ֣࣒ࠥͨMOSFET⋏⋏䚃ᖒᡀ䗷〻㾯ᆹ嗉㞮㾯ᖒ㾯ᡀ㾯䗷㾯〻㾯*359,+:ਯ࣌ৈߣ㾯ᆹ嗉㞮ԅࣤ359,+:݃৴ߣۨ㞮Turn-onTurn-off㾯ᆹ嗉ᆹ嗉㞮ᆹ嗉ᆹ嗉ᆹ嗉urn-offٵவ*359,+:ӻவ֣ȍحପऄஊ3ODQDU9'0265'6RQ㨓㒟♙⒕をₜ⚛䟄☚䷘儶㄂槱026)(75GVRQ⒕を㾯ᆹ嗉㞮㨓㒟♙ᆹ嗉ٵவ*359,+:ӻவ֣ȍؤࣿऄؠՃҿ؉㾯ᆹ嗉㞮+RKIZXOILOKRJOYUTKJOSKTYOUTGRLUXIUT\KTZOUTGRVRGTGX*359zxબগ*359۪ޱષګ֗ѝ޲ࣂѭঞٴ஄*359RJOYUTKJOSKTYOUTࣔګحପऄஊ8YV#8JYUT'INOVثࡁ160510152025304005006007008009001000RdsonxAchip[mm2]VDMOSFETRonxA~V(BR)DSS2.5䟄☚MOSFETⲴ⢩ᖱ⭥䱫Rspоࠫク⭥঻BVDSSⲴޣ㌫SiᲞ䙊VDMOSᶱ䲀㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ㾯㾯ᆹᆹ50600ᆹ嗉嗉嗉MOSFETRnxABR)DSᆹ嗉㾯ᆹSFETⲴ⢩ᖱ2017/5/10172017/5/10172017/5/10*0)UK()NKT0:OHGT_OબগԄࢴ*359ଜੌЊӮ1998ᒤᒤ䎵㔃MOSᔰ࿻୶⭘ʽ㾯ᆹ嗉㞮嗉㞮㾯ᆹ嗉㞮㾯㞮SourceGateDrainn+n+p+pnepiSJMOSFETSourceGateDrainn+n+p+nepiStandardMOSFETѮ৏*359չ90359ङӻவ֣ثࡁ18GateSourceSourceDrainn+n+n+subnepip+p+GateSourceSourceDrainn+n+n+subnepip+p+ppՐՐ㔏VDMOSFETSuperJunctionMOSFET㾯ᆹ嗉㞮㾯ᆹ㾯ᆹ㾯ᆹ㾯ᆹ㾯㾯ᆹ㾯ᆹ㾯ᆹ㾯ᆹ㾯ᆹ㾯ᆹGate㞮ourcen++SuperJunp㾯ᆹ嗉㞮㾯ᆹ嗉㞮+RKIZXOILOKRJOYZ]UJOSKTYOUTGRLGXLXUSJK\OIKKJMKLUXY[VKXP[TIZOUT*359zxબগ*359۪ޱષګ֗ѝ޲ࣂNregionPregion૝ৈ*3594VORRGXJUVOTMOYZ_VOIGRR_UXJKXNOMNKXZNGTZNGZULIUT\KTZOUTGRVRGTGX*359GIIUXJOTMR_Y[VKXP[TIZOUT359,+:8UTYVXKJ[IKYYOMTOLOIGTZR_㾯ᆹ嗉㞮YOUTGRLGXLXUSJ㞮嗉㞮zN4ࣔګحପऄஊ8YV#8JYUT'INOVثࡁ220510152025304005006007008009001000RdsonxAchip[mm2]VDMOSFETRonxA~V(BR)DSS2.5䟄☚䎵㔃MOSRonxA~V(BR)DSS1.17SiᲞ䙊VDMOSᶱ䲀MOSFETⲴ⢩ᖱ⭥䱫Rspоࠫク⭥঻BVDSSⲴޣ㌫㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ㾯㾯ᆹᆹ50600ᆹ嗉嗉嗉MOSFETRxABR)DSSᆹ嗉㾯ᆹ㾯ᆹSFETⲴ⢩ᖱMassProduction(2011)MassProduction(2014)InPlanning(2015ready)SJN-IISJN-I/SJN-1.5SJN-III•Deeptrench•Pillarfilling•Plannergate•HighBVDS•LowRdson•Deeptrench•Pillarfilling•Plannergate•HighBVDS•Smallpitch•LowerRdson•Deeptrench•Pillarfilling•Trenchgate•HighBVDS•Smallerpitch•LowerRdson•ReducemaskReferenceMulti-EPIԢੜؐԃ90359XUGJSGV㾯ᆹ嗉㞮uction014)嗉㞮JN-Iᆹᆹ嗉㞮•Deeptrench•PillarfillingPlannergate•ighBVD•SmallpLowᆹ嗉Პ䙊ᒣ䶒VDMOS䎵㔃MOSཊ⅑ཆᔦᐕ㢪䎵㔃MOS␡⋏‭ᐕ㢪Ӳଭٗਫॐ۞֣ͧޯପ*3599૝ৈ359ͨ㾯ᆹ嗉㞮MO㔃ཊךࠩיڍ3[RZOKVO૝ৈ359,+:9+3PlannerGatePitch:17.8umPlannerGateWidth:10.7um,Space:6.6umGateOxide:1500A,GatePolyThickness:7600ACTWidth:4.78umP-PillarDepth:41.4um,TrenchPitchSize:8.6/9.3EPIThickness:46.2umMuti-EPIRSPA=32.58mohm·cm2㾯ᆹ嗉:17.8umWidt10.7u,Space:6GatePolyThicenc㞮ࢋ㿺ࠤ*KKVZXKTIN૝ৈ359,+:9+3PlannerGatePitch:11.0umPlannerGateWidth:7.7um,Space:3.3umGateOxide:1400A,GatePolyThickness:3480ACTWidth:4.1umTrenchDepth:40.5um,TrenchPitchSize:4/7~5/6EPIThickness:47.2umDeepTrench㾯ᆹ嗉11.0umdth7.7um,Space:3.3u㞮atePolyThickchਯ࣌வ॥ثࡁ'27VDMOSSJMOSFETGEN1GEN2GEN3㾯㾯㾯嗉㞮㞮嗉㞮㞮㞮㾯JMOSFETGEN2GEN2,53#7M8*9UTثࡁͧ*359Y90359ͨ283822100510152025303540VDMOSFET111A/600VVDMOSFET211A/600VSJMOSFET11A/600VRdson*Qg(Ω*nC)****12N60Qg=42nCRdson=0.55ΩQFET****12N60Qg=26nCRdson=0.53ΩUniFETLSD11N60Qg=28nCRdson=0.30ΩSuperJunction㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ嗉㾯ᆹ2222MOSFET111A/600V2N60C,53#7M8*9UTثࡁͧ90359Y-G4.+3:ͨ2916.5311.976.3684.320.374024681012141618CoolMOSC3600V/0.19ΩCoolMOSC6600V/0.19ΩCoolMOSCP600V/0.199ΩCoolMOSC7600V/0.18ΩGaNMOSFET600V/0.22ΩRdson*Qg(Ω*nC)Gen1Gen2Gen2.5Gen3GaNHEMT㾯㾯ᆹ嗉㞮㾯ᆹ嗉㞮㾯ᆹ嗉㾯ᆹ嗉㾯6.36636㾯Ge嗉㞮嗉㞮嗉㞮㞮㞮د੸ڥڔثࡁ30㾯ᆹ嗉㞮嗉㞮嗉㞮ИѺԹ359,+:㾯ᆹ嗉㞮㾯6XUVKXZOKYUL=(-3GZKXOGRY\Y9O㾯ᆹ嗉㞮9O)359,+:ӻவৈߣ㾯ᆹ嗉㞮-G4.+3:㞮-G4ԅࣤ֘ўП੽Դ؟㞮-G49_YZKSҸ՛фս㾯ᆹ嗉㞮㞮-G4ԅࣤ֘ў֘ўङځऀͧ-G4Y_YZKSͨ㾯ᆹ嗉㞮-G4ԅࣤ֘ў֘ўङځऀͧ:XGTYVNUXSͨ㾯ᆹ嗉㞮શશ͠㾯ᆹ嗉㞮શ͠