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K9F5608U0A-YCB0,K9F5608U0A-YIB0FLASHMEMORY1DocumentTitle32Mx8BitNANDFlashMemoryRevisionHistoryTheattacheddatasheetsarepreparedandapprovedbySAMSUNGElectronics.SAMSUNGElectronicsCO.,LTD.reservetherighttochangethespecifications.SAMSUNGElectronicswillevaluateandreplytoyourrequestsandquestionsaboutdevice.Ifyouhaveanyquestions,pleasecontacttheSAMSUNGbranchofficenearyou.RevisionNo.0.00.10.20.30.4RemarkAdvancedInformationPreliminaryPreliminaryHistoryInitialissue.1.Supportcopy-backprogram-Thecopy-backprogramisconfiguredtoquicklyandefficientlyrewritedatastoredinonepagewithinthearraytoanotherpagewithinthesamearraywithoututilizinganexternalmemory.Sincethetime-consumingsequently-readinganditsre-loadingcyclesareremoved,thesystemperformanceisimproved.Thebenefitisespeciallyobviouswhenaportionofablockisupdatedsothattherestoftheblockalsoneedtobecopiedtothenewlyassignedfreeblock.1.Explainhowpointeroperationworksindetail.2.Forpartialpageprogrammingintothecopiedpage-Oncethecopy-backProgramisfinished,anyadditionalpartialpageprogrammingintothecopiedpagesisprohibitedbeforeerase.3.RenamedGNDinput(pin#6)onbehalfofSE(pin#6)-TheSEinputcontrolstheaccessofthesparearea.WhenSEishigh,thespareareaisnotaccessibleforreadingorprogramming.SEisrecommendedtobecoupledtoGNDorVccandshouldnotbetoggledduringreadingorprogramming.=ConnectthisinputpintoGNDorsettostaticlowstateunlessthesequentialreadmodeexcludingspareareaisused.4.UpdatedoperationfortRSTtiming-Ifresetcommand(FFh)iswrittenatReadystate,thedevicegoesintoBusyformaximum5us.1.Inaddition,explainWEfunctioninpindescription-TheWEmustbeheldhighwhenoutputsareactivated.1.Powerupsequenceisadded:Recoverytimeofminimum1μsisrequiredbeforeinternalcircuitgetsreadyforanycommandsequences2.ACparametertCLR(CLEtoREDelay,min50ns)isadded.3.ACparametertAR1value:100ns--20nsVCCWPHigh≈≈~2.5V~2.5V≈WE1μDraftDateJuly17th2000Oct.4th2000Nov.20th2000Mar.2th2001Jul.22th2001Note:FormoredetailedfeaturesandspecificationsincludingFAQ,pleaserefertoSamsung’sFlashwebsite.(33,554,432)x8bitNANDFlashMemorywithaspare1,024K(1,048,576)x8bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationprogramsthe528-bytepageintypical200μsandaneraseoperationcanbeper-formedintypical2msona16K-byteblock.Datainthepagecanbereadoutat50nscycletimeperbyte.TheI/Opinsserveastheportsforaddressanddatainput/outputaswellascom-mandinputs.Theon-chipwritecontrollerautomatesallpro-gramanderasefunctionsincludingpulserepetition,whererequired,andinternalverificationandmarginingofdata.Eventhewrite-intensivesystemscantakeadvantageoftheK9F5608U0A′sextendedreliabilityof100Kprogram/erasecyclesbyprovidingECC(ErrorCorrectingCode)withrealtimemapping-outalgorithm.TheK9F5608U0A-YCB0/YIB0isanoptimumsolutionforlargenonvolatilestorageapplicationssuchassolidstatefilestorageandotherportableapplicationsrequiringnon-volatility.GENERALDESCRIPTIONFEATURES•VoltageSupply:2.7V~3.6V•Organization-MemoryCellArray:(32M+1024K)bitx8bit-DataRegister:(512+16)bitx8bit•AutomaticProgramandErase-PageProgram:(512+16)Byte-BlockErase:(16K+512)Byte•528-BytePageReadOperation-RandomAccess:10μs(Max.)-SerialPageAccess:50ns(Min.)•FastWriteCycleTime-Programtime:200μs(Typ.)-BlockEraseTime:2ms(Typ.)•Command/Address/DataMultiplexedI/OPort•HardwareDataProtection-Program/EraseLockoutDuringPowerTransitions•ReliableCMOSFloating-GateTechnology-Endurance:100KProgram/EraseCycles-DataRetention:10Years•CommandRegisterOperation•IntelligentCopy-Back•Package:-K9F5608U0A-YCB0/YIB0:48-PinTSOPI(12x20/0.5mmpitch)PINCONFIGURATIONNOTE:ConnectallVCCandVSSpinsofeachdevicetocommonpowersupplyoutputs.DonotleaveVCCorVSSdisconnected.K9F5608U0A-YCB0/YIB0123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.CN.CN.CN.CN.CGNDR/BRECEN.CN.CVccVssN.CN.CCLEALEWEWPN.CN.CN.CN.CN.CN.CN.CN.CN.CI/O7I/O6I/O5I/O4N.CN.CN.CVccVssN.CN.CN.CI/O3I/O2I/O1I/O0N.CN.CN.CN.CPinNamePinFunctionI/O0~I/O7DataInput/OutputsCLECommandLatchEnableALEAddressLatchEnableCEChipEnableREReadEnableWEWriteEnableWPWriteProtectGNDGNDinputforenablingspareareaR/BReady/BusyoutputVCCPowerVSSGroundN.CNoConnectionPINDESCRIPTIONK9F5608U0A-YCB0,K9F5608U0A-YIB0FLASHMEMORY3512Byte16ByteFigure1.FUNCTIONALBLOCKDIAGRAMFigure2.ARRAYORGANIZATIONNOTE:ColumnAddress:StartingAddressoftheRegister.00hCommand(Read):Definesthestartingaddressofthe1sthalfoftheregister.01hCommand(Read):Definesthestartingaddressofthe2ndhalfoftheregister.*A8issettoLoworHighbythe00hor01hCommand.*Thedeviceignoresanyadditionalinputofaddresscyclesthanreguired.I/O0I/O1I/O2I/O3I/O4I/O5I/O6I/O71stCycleA0A1A2A3A4A5A6A72ndCycleA9A10A11A12A13A14A15A163rdCycleA17A18A19A20A21A22A23A24VCCX-Buffers256M+8MBitCommandNANDFlashARRAY(512+16)Bytex65536Y-GatingPageRegister&S/AI/OBuffers&LatchesLatches&DecodersY-BuffersLatches&DecodersRegisterControlLogic&HighVoltageGeneratorGlobalBuffersOutputDriverVSSA9-A24A0-A7CommandCEREW