COF结构中键合力损伤芯片Al层的研究

26120051CHINESEJOURNALOFSEMICONDUCTORSVol.26No.1Jan.,2005,1978,,.2003212217,20042052092005COFAl1221(1,200433)(2,200131):,2Al,.,Al..:;;2;EEACC:2550X;0170J:TN306:A:025324177(2005)01202092061(LCD),(ACF)(COG)(COF)[1,2].ACF,.,LCD,(ICdriver),,ACF[3].,(bumpgap)15m,ACF[4].ACF,(non2conductivefilm,NCF)[5]2()(Au2Aueutectic)[6]ACF.ACF,.,,,,.IC,.2,Au/Ni,(un2derfill).2220240330,12.1Fig.1ProcessofNCFtechnique2.,IC,,22Fig.2ProcessofAu2Aueutectictechnique.Al,Al,.Al.2,,.ANSYS,2,.Al.,.22.1IC1018mm1195mm,381m()BOA(bumponactive),30m99m15m,Al011m.35m,,/25/31m17/23m,1313m(Ni/Au).27,9,1114kgf,100..2.2[7].ANSYS2.,,.,2,.2D,3..,17m25m.3Fig.3SchemeofabondingunitofFEA[8,9],1.1Table1MaterialparametersusedinFEsimulation/(Nmm-2)1310000.30655260.35780000.301210000.3542000.30PLANE182,4,.,7,9,1114kgf.33.1Al22.012264COFFig.4MeshforFEAofCOFinterconnectstructure2Table2Resultofelectricfunctiontest7kgf9kgf11kgf14kgf236%,Al,5.2,2.,,.2,2Al.,2100,Al,2.ANSYSAl6,,.,.3.2Al5ICAlFig.5CrackonICsurface6AlFig.6VonmisesstressdistributionintheAllayerAl,.3.3Table3Maximumbondingforcesonfoilsofdifferentcon2ductivetrackwidth/m/m/mm225.3990.80214.5kgf16.6990.5259.5kgf1121:COFAl,,,(18kg/mm2),.2,Al.ANSYS7.,Al.,,Al.7AlFig.7Maximumvonmisesstressinthealuminumpadversusbondingforce3.3Al,,,510m.2Al,.,10m20m,30m,.,,,.8,,.,10m20m.25%,Al;25%50%,.20m8Al(a)7kgf;(b)9kgf;(c)11kgf;(d)14kgfFig.8RelationshipbetweenmaximumvonmisesstressinAlpadandmisalignmentdisplacementundervariousbond2ingforces(a)7kgf;(b)9kgf;(c)11kgf;(d)14kgf,5m,Al,5m20m.10m21226,5mAl,215m.,Al,(25%)Al;,.42,:(1),Al.2,214kgfAl,.(2)2,.(3)Al,(25%)Al;,.,,.[1]TanCW,ChanYC,YeungNH.Behaviorofanisotropicconductivejointsundermechanicalloading.MicroelectronicsReliability,2003,43:481[2]YimM,PaikK.Designandunderstandingofanisotropicconductivefilms(ACFs)forLCDPackaging.IEEETransComponentPackagingTechnol2PartA,1998,21:226[3]LiuJ.ACAbondingtechnologyforlowcostelectronicspackagingap2plications2currentstatusandremainingchallenges.Soldering&Sur2faceMountTechnology,2001,13(3):39[4]ChiuYW,ChanYC,LuiSM.Studyofshort2curcuitingbetweenad2jacentjointsunderelectricfieldeffectsinfinepitchanisotropiccon2ductiveadhesiveinterconnects.MicroelectronicsReliability,2002,42:1945[5]ShenGS.LCDdriverICassemblytechnologiesandstatus.IntlSym2posiumonElectrionicMaterialsandPackaging,2002:316[6]KimYG,PavulurJK,etal.Thermocompressionbondingeffectsonbump2padadhesion.IEEETransactiononComponents,PackagingandManufacturingTechnology2PartB,1995,18(1):192[7]HuangWeidong,SunZhiguo,CaiXia,etal.Distributionofresidualstressinpackagingassembliesofchiponboard.ChineseJournalofSemiconductors,2003,24(6):649(inChinese)[,,,..,2003,24(6):649][8]LauJH,PaoYH.SolderjointreliabilityofBGA,CSP,flipchip,andfinepitchSMTassemblies.NewYork:McGraw2Hill,1997:112[9]LauJH,RiceDW,HarkinsCG.Thermalstressanalysisoftapeau2tomatedbondingpackagesandinterconnections.IEEETransactiononComponents,HybridsandManufacturingTechnology,1990,13(1):1823121:COFAlDamageofBondingForceonICAluminumPadinCOFStructurePengYaowei1,ChanJusty2,WangZhiping2,andXiaoFei1(1DepartmentofMaterialScience,FudanUniversity,Shanghai200433,China)(2ChinaTechnologyCenter,PhilipsMobileDisplaySystems,Shanghai200131,China)Abstract:TheimpactofbondingforceonAlpadinICchip,andthemaximumbondingforceareachievedbybothexperimentalandsimulativemethods.Trackwidthandmisalignmentaretwomainfactorsstudied.Theformeraffectsthefoilandinterconnectdesign;whilethelaterisrelat2edtomanufacturingtolarenceandbondingmachineaccuracy.Itisshownthatthebondingforce,trackwidthandmisalignmenthavegreatinflu2enceonthemaximumstressinthealuminumpadoftheIC.Keywords:chiponfoil;non2conductivefilm;Au2Aueutectic;finiteelementsimulationEEACC:2550X;0170JArticleID:025324177(2005)0120209206PengYaoweifemale,wasbornin1978,mastercandidate.Herresearchinterestsmainlyfocusonelectronicpackagingandinterconnecttechnology.Received17December2003,revisedmanuscriptreceived9May20042005ChineseInstituteofElectronics41226