TSOP叠层芯片封装的研究

上海交通大学硕士学位论文TSOP叠层芯片封装的研究姓名：张德洪申请学位级别：硕士专业：电子与通信工程指导教师：陈佳品200712011TSOP3DNOR/NANDSDRAM20053DTSOPTSOP3DTSOP3DTSOPTSOPTSOPTSOP3D,2TSOPSSB:NANDTSOPSSBABSTRACT3TSOPSTACKDIESOLUTIONSTUDYABSTRACTStackdiepackage,3D,isatechnology,whichstacksmultiplediceverticallyinthesamepackage.Stackdietechnologyoffersyoupackages,whicharemultiplefunctionality,betterperformance,higherdensityandlowercost.Stackeddiepackageistheidealsolutionforsysteminpackageapplicationssuchaswirelessproduct,portableproduct,andmemorycard.TSOPismajorNANDpackage.NANDmarketisboominginrecentyears.AsTSOPpackageismorecosteffectivethanPBGAandmoreflexiblethanSIP,itisaverypopularpackagesince2006.Firstly,authorintroducesthesinglediepackageprocessinthisarticle.Thenauthordescribes3differentTSOPstackdiepackageassemblyprocesssolution.Furthermore,authorsummarizescharacteristicsandapplicationofthe3differentprocesses.Inthisarticle,authorgaveoutthemostimportanttechnologysolutiontoABSTRACT4stackdietechnology.ThemostimportantevolutionofTSOPstackdietechnologyisthattheepoxyfilmwhichwasusedtoreplacetheliquidSilverEpoxyglueandimportedgoldwireSSBloopingtechnology.Theepoxyfilmallowsthestackdiepackagetechnologyisevensimplerthansingledie.SSBwirebondingtechnologyallowsustostackmorewirelayersinsamespacesuccessfully.Itisalsoindicatedthesolutionoffurtherhigh-densitypackagetechnologythroughthesenewtechnologies.KEYWORDS:stackdie,3D,NAND,TSOPstackdie,epoxyfilm,SSB1111.123+/-3degC50+/-10%1K10K-40degC60degC100%120degC-1TSOP(TSOPPackageCross-sectionStructure)121.2-2(AssemblyTechnologyDevelopmentTrend)DIPSOPLCCPGAxSOPPBGABGAMCM/SIPFBGA/FLGAQFN1970s1980s1990s2000sQFP131.xSOPSOPSSOP/TSOP/TSSOP/MSOP/VSOP2.3DTSOP80TSOPThinSmallOutlinePackage1.27mm0.5mmTSOP20053DSIPTSOPCSPQFP2007PiPPackageinPackagePoPPackageonPackage3D-2(AssemblyTechnologyDevelopmentTrend)1970s1980s1990s2000s1010010002005s141.33DNOR/NANDSDRAMPDADSPASICRFMEMS3DSD70nm1G2G50nm2GSD50nm151.4TSOPTSOPDRAMTSOPTinyBGA50%DDR/DDRRIITinyBGANANDICInsight2005NAND64%4%162006NAND30%20068%3DRAMeXchange2007NANDFlashNANDFlash20073936.8%NANDNANDTSOPSiPTSOPNANDSiPTSOPSiPSMDSiPTSOPTSOPSMDSDMiniSDCFMP3/MP4SDRAMSiPSiPSMDPBGATSOPTSOPIntelNAND/NORPBGATSOPIntelMicronIMFT(IMFlashTechnology)NANDTSOPiPodNANDNAND20%5200725%NANDTSOP55%16TSOP2TSOP72TSOPFront-of-lineFOLEnd-of-lineEOLFOLLeadframeSubsrtateEOL2.1ToEOL2TSOP81(wafer)-3(WaferFab)2(Backgrinding)0.7mm-4TSOP0.28mm-3(Wafer)-4(BackgrindingProcess)2TSOP93(WaferMount)-5WaferRing(BlueTape)-5-5(WaferMountProcess)2TSOP104(DieSawing)-6-6-6(WaferSawingProcess)(DiamondSawBlade)(SawingStreet)2TSOP115(DieAttach)-7a-7b-7a(DieAttachProcess)-7b(DieAttachProcess)2TSOP12-7c6(WireBonding)-84.3-7c(DieAttachProcess)-8(AfterWireBonding)2TSOP132.2ToTest100%2TSOP141(Molding)-9a165-18530-9a(MoldingProcess)2TSOP15-9b2(Trim)-10-9b-9b(MoldingProcess)-10(TrimProcess)2TSOP163(Plating)-11-104(From)-12-1JEDECMO-142,THINSMALLOUTLINEPACKAGEFAMILYTYPEI20007TSOP1.27mm0.5mm1.0mmTSOP48X=12X20-11(PlatingProcess)-12(FormProcess)317323+/-350+/10%-1-2-1(B/G)DISCODFG-850TSKPG300(W/M)TAKATORIATM-8100TSKPG300(D/S)DISCODFD640/651TSKA-WD-300DISCODFD6361DISCODFD651ESEC2007/2008HSESEC2008XP(D/A)ASMAD889ASMAD8912SHINKAWAUTC-250SHINKAWAUTC1000/2000(W/B)K&S8028K&S8028PPS-2(W/M)EpoxyFilmTape(D/A)EpoxyFilm(D/A)(W/B)99.99%(MOLD)EME-G700EME-G700V(PLATING)4TSOP184TSOPTSOP2+1TSOPVFBGA3+0VFBGATSOP2+1ActiveDie4.1TSOP2+X4.1.1TSOP2+1-13TSOP2+14TSOP19(D/A)(W/B)TSOP2+1(D/A)(W/B)(DieCrack)4.2Continue122332114TSOP204.1.2TSOP2+1-15(EpoxyFilmTapeWaferMountProcess)4TSOP21Continue1232114TSOP224.1.3TSOP2+0Continue12-15TSOP2+04TSOP234.1.4-399.5%(W/M)99.8-99.9%(D/A)(W/B)99.90%4TSOP244.2(DieCrack)MOLDING(DieCrack)-16(DieCrackPattern)4TSOP2575%25-100um(D/A)12-38um10MPa(DieCrack)Overlyingdie(DA2)Bottomdie(DA1)-17(PrincipleofWhyDieCrackHappened)4TSOP26TAMITomographicAcousticMicroImaging-18(C-ScanPhoto,Top)-19(ThroughScanPhoto)-20TAMI(HowTAMIworks)4TSOP27TAMI(Pattern)95%95%(DieCrack)0TAMI95%-21TAMI(SamplephotoofTAMI)-22(RecommendedEpoxyPattern)4TSOP280.1mm3(DieCrack)4.3190-21060KHz120KHz120KHz0.038mmTSOP0.025mm0.020mmTSOPHeat-23(GoldBallBond)4TSOP290.12mm0.2mm4.3.1-24TSOP1+0TSOP2+1(TSOP1+0,TSOP2+1GoldBallBond)4TSOP30-25(StandardGoldBallBondProcessSteps)4TSOP314.3.2SSBSSBStandoffStitchBondSSBReverseLooping-26-27SSB-26(StandardGoldBallBond)(Stitch)4TSOP32SSB-28SEM(GoldBallBondSSB,StitchSEMPhoto)-27(GoldBallBondSSB)(BondPad)4TSOP33盘4TSOP34SSBSSB48SSB4.3.3SSBTSOP3+0SSBTSOP3+0-29GoldBallBondSSBProcessSteps)Step1Step2-30TSOP3+0TSOP3+0GoldBallBondSSBFormationStep)4TSOP35Step1:Die2Die3(Bump)Step2:SSBDie1Die2Step3:SSBDie2Step4:SSBDie2Die3SSBSSB4.3.4SSB-31TSOP3+0TSOP3+0GoldBallStandard(Forward)BondCollection)-30TSOP3+0TSOP3+0GoldBallBondSSBFormationStep)Step4Step34TSOP3644SSBSSB-31TSOP2+14.3.5(W/B)14.4TSOP2+1)1.(D/A)(W/B)2.1/23.FOL-1-31TSOP2+14TSOP374.(D/A)(W/B)(D/A)(W/B)5.-2DFG850300mm0.15mmESEC2007/2008HSASMAD889300mmESEC2008XPASMAD8912SSBUTC1000UTC2000K&SMaxumPlusK&SMaxumUltra53852006TSOPTSOPBGADRAMDDR/DDRII2005-2006SIPNAND2008TSOP2GTSOP24GTSOP48GTSOPTSOPSSBTSOP2+0TSOP2+1TSOP3+0TSOP2+0