櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶DOI10.13290/j.cnki.bdtjs.2016.04.002April2016SemiconductorTechnologyVol.41No.42499732013CB632101E-mailxdpi@zju.edu.cn12211.3100272.443005。-CH3NH3PbX3X=ClBrICsPbX3X=ClBrI。CH3NH3PbX3X=ClBrICsPbX3X=ClBrI、。LED。。LEDEQETN304A1003-353X201604-0249-12AdvancementofPerovskiteQuantumDotswithExcellentLuminescencePropertiesLiuXiangkai1LiZehua2ZhangFahuan2PiXiaodong11.SchoolofMaterialsScienceandEngineeringZhejiangUniversityHangzhou310027China2.YilingMiddleSchoolYichang443005ChinaAbstractAmongvariousquantumdotsthequantumdotswithaperovskitestructurehaverecentlydrawngreatattentionbecauseofexcellentluminescencepropertiessuchashighluminousefficiencyandnarrow-bandlightemissionwithtunablecolor.TheorganometalleadhalideCH3NH3PbX3X=ClBrIandthecesiumleadhalideCsPbX3X=ClBrIperovskitequantumdotsarethefocusofre-searchescurrently.TheresearchprogressofCH3NH3PbX3X=ClBrIandCsPbX3X=ClBrIperovskitequantumdotsathomeandabroadisintroducedindetail.Thesynthesismethodthestructuralfeaturesandexcellentphotoluminescencepropertiesoftheperovskitequantumdotsareanalyzedemphatically.Thedevelopmentofthelight-emittingdiodesLEDsbasedontheabove-mentionedtwoperovskitematerialsarebrieflyintroduced.Intheendthedisadvantagesofperovskitequantumdotsareanalyzed.Itisbelievedthatcontinuouslyimprovedperovskitequantumdotsmaybecomeoneofthemostimportantmaterialsfornext-generationoptoelectronicdevices.Keywordsperovskitequantumdotphotoluminescencesurfacemodificationlight-emittingdiodesLEDexternalquantumefficiencyEQEEEACC42200ABX3X=ClBrI櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶25041420164、。CH3NH3PbX3X=ClBrI120%2。CH3NH3PbX3X=ClBrI。CH3NH3PbX3X=ClBrI。3。4。CH3NH3PbX3X=ClBrI。。CH3NH3PbX3X=ClBrI。5。XClBrICH3NH3PbX3X=ClBrI3。L.Protesescu4Cs+CH3NH3PbX3X=ClBrICH3NH3+CsPbX3X=ClBrI。CH3NH3PbX3X=ClBrI。CH3NH3PbX3X=ClBrICsPbX3X=ClBrILED。1CH3NH3PbX3X=ClBrI1.1CH3NH3PbX3X=ClBrICH3NH3PbCl3CH3NH3PbI3CH3NH3PbBr33。CH3NH3PbBr3。2012A.Kojima6CH3NH3PbBr3。CH3NH3PbBr3。MABrPbBr2NN-DMF1minCH3NH3PbBr3。350nm523nm。CH3NH3PbBr3。A.Kojima。2014L.C.Schmidt76nmCH3NH3PbBr3。OAmBrOA1-ODE80℃DMFMABrPbBr2CH3NH3PbBr3。20%。S.Gonzalez-Carrero8MABrPbBr2OAmBrODE83%CH3NH3PbBr3。、。2015F.Zhang33.3nmCH3NH3PbBr31。MABrPbBr2OAmOADMF櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶April2016SemiconductorTechnologyVol.41No.4251。CH3NH3PbBr3。CH3NH3PbBr3。1CH3NH3PbBr3Fig.1SchematicillustrationofthereactionprocessforCH3NH3PbBr3F.Zhu9H.Huang5CH3NH3PbI3CH3NH3PbBr3。F.Zhang3。。1.2CH3NH3PbBr3CH3NH3PbBr3CH3NH3PbX3X=ClBrI。PbBrPbBr6PbCH3NH3+2。CH3NH3PbBr3CH3NH3PbI355~57℃7。2MX67Fig.2SchematicsofanarrayofcornersharingMX6octahe-draconfinedinthethreedimensionsduetotheor-ganiccapping7、PbBr63。F.Zhang3。。CH3NH3PbBr324hCH3NH3PbBr3、。。S.Gonzalez-Carrero8。1td。33Fig.3Molecularstructuralmodel3櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶252414201641CH3NH3PbBr3Tab.1ComparisonofCH3NH3PbBr3quantumdotswithdifferentreferencest/℃d/nmMABrPbBr2OAmOADMF253.3±0.73MABrPbBr2OAmOADMF01.85MABrPbBr2OAmOADMF302.85MABrPbBr2OAmOADMF603.65MABrPbBr2OAmBrDMFOAODE806.2±1.17MABrPbBr2OAmBrDMFOAODE607.0±1.58MABrPbBr2OAmBrDMFODE605.5±1.58MABrPbBr2OAmBrDMFOA605.9±1.88CH3NH3PbBr32nm34nm。7-86nm4nm。1.3CH3NH3PbBr3CH3NH3PbBr3CH3NH3PbX3X=ClBrI。N.Kitazawa102002CH3NH3PbBr3-xClxPL4IPLPLλ。CH3NH3PbBr3350nm530nmCH3NH3PbBr3VP2.32eV。4Clx。CH3NH3PbBr3-xClxPL4CH3NH3PbBr3-xClx350nm10Fig.4PhotoluminescencespectraoftheCH3NH3PbBr3-xClxfilmsmeasuredatroomtemperature10ClPLCH3NH3PbBr3。F.Zhang3CH3NH3PbBr3-505nmPL515nm21nm96meV5aI。CH3NH3PbBr3545nm30nm131meVCH3NH3PbBr3。5bnPL。CH3NH3PbBr32。a-b5CH3NH3PbBr3-3Fig.5UVabsorptionandPLemissionspectraandthetime-resolvedPLdecayandfittingcurveofatypicalsampleofCH3NH3PbBr3QDsintoluene32CH3NH3PbBr3Tab.2OpticalpropertiesofCH3NH3PbBr3quantumdotsindifferentreferences/nm/nm/nm/%45051521703365475~52028~3674~9353655272117735051332838櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶April2016SemiconductorTechnologyVol.41No.4253L.C.Schmidt7S.Gonzalez-Carre-ro8CH3NH3PbBr3。。358CH3NH3PbBr35b。CH3NH3PbBr3。。。CH3NH3PbBr370%90%。CH3NH3PbBr3CH3NH3PbBr3。F.Zhang3。375meV65meV。。F.ZhangCH3NH3PbBr3、。CH3NH3PbBr3、。CH3NH3PbBr370%。1.4CH3NH3PbX3X=ClBrICH3NH3PbX3X=ClBrI。。N.kitazawa10ClI。CH3NH3PbCl3CH3NH3PbBr3CH3NH3PbI33.042.321.5eV408540820nm。。F.Zhang3407~734nm6。a365nmb1~9CH3NH3PbX361~9CH3NH3PbX3365nm3Fig.6OpticalimagesofCH3NH3PbX3QDsNo.1-9un-derambientlightanda365nmUVlampandthePLemissionspectraofCH3NH3PbX3QDs3H.Huang5CH3NH3PbBr3。F.Zhang302025304060℃6475~520nm7。。670%60℃93%。610~30ns。F.Zhu9。F.Zhang3。櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶櫶25441420164、、。CH3NH3PbBr313%。a365nmb7365nmFig.7PhotographofcolloidalsolutionsintolueneunderUVlampexcitationwith365nmexcitationwave-lengthandthePLspectratunabilityovertherangeofwavelengthsindicated52CsPbX3X=ClBrICH3NH3PbX3X=ClBrICsPbX3X=ClBrI。CsPbX35011。Kovalenko。2.1CsPbX3X=ClBrIL.Protesescu420151CsPbX3X=ClBrI。Cs2CO3OA1-ODE150℃N21hCs+。ODEPbX2X=ClBrI120℃。OLAOAPbX2X=ClBrI140~200℃。Cs+5sCsPbX3X=ClBrI。J.Song12Y.Wang13CsPbX3X=ClBrI20158。20157G.Nedelcu14CsPbX3X=ClBrI。MeMgXOamXPbX2ODE120℃10min。N2OAOLA。40℃CsPbX3“”。CsPbX3X=ClBrI。8。8CsPbX314Fig.8Schem