一种硅埋置型微波多芯片组件封装的电性能

152Vol115,No1220094JOURNALOFFUNCTIONALMATERIALSANDDEVICESApr.,2009:1007-4252(2009)02-0125-07:2008-04-22;:2008-05-26:(1982-),,,,.:(E-mail:[e-mail]).,(,,200050):BCB,,,BCB/Au,Ku:;;:O441.4:APerformanceofasilicon-basedembeddedMMCMpackageQILong2song,LUOLe(ShanghaiInstituteofMicrosystemandInformationTechnology,CAS,Shanghai200050,China)Abstract:AnovelembeddedpackagestructureforMicrowaveMultichipModule(MMCM)isstudied,whichisbasedonMEMSprocessandBCBthickfilmtechnology.Asetofmicrowavechipsareembeddedinmetalizedsiliconcavities,andthenelectricallyconnectedthroughbondedgoldbumpstotheuppermultilayerBCB/Autransmissionlines.Interlayerconnectionisrealizedbyelectroplatedgoldpillars.Per2formanceoftransmissionlines,electricinfluencetochipintroducedbypackageandKu-bandbandpassfiltersthatcanbeintegratedinthispackagearesimulatedandoptimizedbyHFSS.Keywords:multichipmodule,embeddedpackage,microwavetransmissionperformance0(MMCM,MicrowaveMultichipModule)/,MMCM(LTCC,LowTem2peratureCo-firedCeramic)(MHIC,MicrowaveHybridIntegratedCir2cuit),,:1),;2),;3),,,,,1MMCM1,,[1],BCB/Au,[2]Fig.1Schemaofsilicon-basedMMCMembeddedpackage1:1).;2).;3).;4).,,,;,,BCBPCBLTCC[3],;,LTCCMHIC,;,,;,(),2MMCMICBCB,:BCBAuBCB/Au,100:1);2)BOE,SiO2;3)SiO2KOH,;4).TiW/Au;5)Au,TiW/Au,,,BCB,(CMP)BCB:BCB,,BCB[4]:1)Cr/Au;2)Au;3)Au,Cr/Au;4)BCB;5)CMPBCBAu;5);6)BCB2,(a),BCB;(b)BCBAu,,39.8m;(c),50m,1m,,Fig.2Photoofembeddedchip(a)BCB/Auconterconnects(b)electroplatedgoldbump2(a)BCB/Au(b)(c)621153:,AnsoftHF2SS:,[5]3.1,bWt,r,BCB,AuHFSSBCB/Au,3(a),,,3(b)HFSS,0.5mm1.5mm5mm,W=28mb=50mt=3m140GHz,S,4,:S12-0.6dB/5mm,IL=-20log|S12|0.6dB/5mm;S11-19dB,RL=-20log|S11|19dBLTCC0.2dB/mm[6],,,,Fig.3HFSSmodelofstriplinewithoutcavity(a)withcavity(b)3HFSS(a)HFSS(b),50,50brt,TxlineBCB/AuW,HFSS,W,Z0505,W=28mZ050,,3.2,hrWt,,,BCB,AuHFSS:1),2)GaAs,0.5mm,3)GaAs,115mm,h=50mt=3mW=120m5mm7212,:6,:S12-0.2dB/5mm,IL=-20log|S12|0.2dB/5mm;S11-25dB,RL=-20log|S11|25dB,,,7Z0,W=120mZ05052.5,=|ZL-Z0ZL+Z0|,ZL50MMIC,5%,3.38HF2SS,30m3mm50GaAs/Au,,,9:40GHz,S11-18dB,S12-0.55dB,[7],,,3.4BCB/Au,,10,,:(Pad)D1D2D3D4,D250m,,:D1=80mD3=100mD4=160m,S11,40G:S11-25dB,S12-0.1dB,,,821154BCB,,,,BCB,,Fig.12Schemaofmicrostripshort-line(MSL)structure12,GaAs/Au,120m50m100m150mBCB,S13,,BCB,,30GHzFig.13S-parameterofMSLcoveredwithBCB13BCBS5,,:;,,9212,:1Table1TopologyparametersoftwoBPFsW(m)W1(m)W2(m)W3(m)S1(m)S2(m)p1(m)p2(m)/188.199.844.110.0100.03741.5/120304.2223.0/39.8106.11924.71729.11415Ku(BPF),13.5GHz,-3dB1.5GHzAnsoftDesigner,,HFSS,1,4mm3mm1617,13.5GHz-3dB1.5GHz,S12-1.9dB,S11-24.8dB-16.4dB,,Ku,BPF,,,6,,,,40GHz:1)0.6dB/5mm;2)0.2dB/5mm;3)0.55dB;4)0.15dB,30GHz,(),,,,,,:[1]RamirezRC,JacksonRW.ATechniqueforInterconnec2tingMillimeterWaveIntegratedCircuitsUsingBCBandBumpBonds[J].IEEEMicrowaveandWirelessCom2ponentsLetters,2003,13(6):196-198.[2]MotonoriMurase,YutakaSasaki,AkihiroSasabata,etal.MultichipTransmitter/ReceiverModuleUsingHighDielec2tricSubstratesfor5.8GHzITSApplications[J].IEEEMTT-SDigest,1999:211-214.[3]PhamAVH,LaskarJoy,VikramBK,etal.UltraLowLossMillimeterWaveMultichipModuleInterconnects[J].IEEETransonComponents,Packaging&ManufacturingTech,1998.21(3):302-308.[4]TakeshiMiyagi,YujiIseki,KazuhitoHiguchi,etal.MCM-D/LUsingCopper/Photosensitive-BCBMultilayerforUpperMicrowaveBandSystems[J].ElectCompand03115TechConf,1996:149-153.[5]PostJE.IntegrationofMicrowaveandMillimeterwaveSys2temsinaPrecisionMultichip-moduleDepositedProcess[J].StanfordUniversity,2005.5:35-72.[6],,.[J].,2002,30(5):711-714.[7]LaskarJ,JokerstN,BrookeM,etal.ReviewofRFPacka2gingResearchatGeorgiaTechsPRC[A].InternationalSymposiumonAdvancedPackagingMaterials[C].1998.139-150.1312,: