IRFZ24N中文资料

PhilipsSemiconductorsProductspecificationN-channelenhancementmodeIRFZ24NTrenchMOSTMtransistorGENERALDESCRIPTIONQUICKREFERENCEDATAN-channelenhancementmodeSYMBOLPARAMETERMAX.UNITstandardlevelfield-effectpowertransistorinaplasticenvelopeusingVDSDrain-sourcevoltage55V’trench’technology.ThedeviceIDDraincurrent(DC)17Afeaturesverylowon-stateresistancePtotTotalpowerdissipation45WandhasintegralzenerdiodesgivingTjJunctiontemperature175˚CESDprotectionupto2kV.ItisRDS(ON)Drain-sourceon-state70mΩintendedforuseinswitchedmoderesistanceVGS=10Vpowersuppliesandgeneralpurposeswitchingapplications.PINNING-TO220ABPINCONFIGURATIONSYMBOLPINDESCRIPTION1gate2drain3sourcetabdrainLIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDSDrain-sourcevoltage--55VVDGRDrain-gatevoltageRGS=20kΩ-55V±VGSGate-sourcevoltage--20VIDDraincurrent(DC)Tmb=25˚C-17AIDDraincurrent(DC)Tmb=100˚C-12AIDMDraincurrent(pulsepeakvalue)Tmb=25˚C-68APtotTotalpowerdissipationTmb=25˚C-45WTstg,TjStorage&operatingtemperature--55175˚CESDLIMITINGVALUESYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVCElectrostaticdischargecapacitorHumanbodymodel-2kVvoltage,allpins(100pF,1.5kΩ)THERMALRESISTANCESSYMBOLPARAMETERCONDITIONSTYP.MAX.UNITRthj-mbThermalresistancejunctionto--3.3K/WmountingbaseRthj-aThermalresistancejunctiontoinfreeair60-K/Wambientdgs123tabFebruary19991Rev1.000PhilipsSemiconductorsProductspecificationN-channelenhancementmodeIRFZ24NTrenchMOSTMtransistorSTATICCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITV(BR)DSSDrain-sourcebreakdownVGS=0V;ID=0.25mA;55--VvoltageTj=-55˚C50--VVGS(TO)GatethresholdvoltageVDS=VGS;ID=1mA2.03.04.0VTj=175˚C1.0--VTj=-55˚C--4.4IDSSZerogatevoltagedraincurrentVDS=55V;VGS=0V;-0.0510μATj=175˚C--500μAIGSSGatesourceleakagecurrentVGS=±10V;VDS=0V-0.041μATj=175˚C--20μA±V(BR)GSSGatesourcebreakdownvoltageIG=±1mA;16--VRDS(ON)Drain-sourceon-stateVGS=10V;ID=10A-6070mΩresistanceTj=175˚C--157mΩDYNAMICCHARACTERISTICSTmb=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITgfsForwardtransconductanceVDS=25V;ID=10A1--SCissInputcapacitanceVGS=0V;VDS=25V;f=1MHz-365500pFCossOutputcapacitance-110135pFCrssFeedbackcapacitance-6085pFQgTotalgatechargeVDD=44V;ID=20A;VGS=10V--19nCQgsGate-courcecharge--5.2nCQgdGate-drain(miller)charge--7.2nCtdonTurn-ondelaytimeVDD=30V;ID=10A;-914nstrTurn-onrisetimeVGS=10V;RG=10Ω-1621nstdoffTurn-offdelaytimeResistiveload-1425nstfTurn-offfalltime-1320nsLdInternaldraininductanceMeasuredfromcontactscrewon-3.5-nHtabtocentreofdieLdInternaldraininductanceMeasuredfromdrainlead6mm-4.5-nHfrompackagetocentreofdieLsInternalsourceinductanceMeasuredfromsourcelead6mm-7.5-nHfrompackagetosourcebondpadREVERSEDIODELIMITINGVALUESANDCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITIDRContinuousreversedrain--17AcurrentIDRMPulsedreversedraincurrent--68AVSDDiodeforwardvoltageIF=19.7A;VGS=0V-0.951.2VtrrReverserecoverytimeIF=19.7A;-dIF/dt=100A/μs;-32-nsQrrReverserecoverychargeVGS=-10V;VR=30V-0.12-μCFebruary19992Rev1.000PhilipsSemiconductorsProductspecificationN-channelenhancementmodeIRFZ24NTrenchMOSTMtransistorAVALANCHELIMITINGVALUESYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITWDSSDrain-sourcenon-repetitiveID=10A;VDD≤25V;--30mJunclampedinductiveturn-offVGS=10V;RGS=50Ω;Tmb=25˚CenergyFig.1.Normalisedpowerdissipation.PD%=100⋅PD/PD25˚C=f(Tmb)Fig.2.Normalisedcontinuousdraincurrent.ID%=100⋅ID/ID25˚C=f(Tmb);conditions:VGS≥10VFig.3.Safeoperatingarea.Tmb=25˚CID&IDM=f(VDS);IDMsinglepulse;parametertpFig.4.Transientthermalimpedance.Zthj-mb=f(t);parameterD=tp/T020406080100120140160180Tmb/CPD%NormalisedPowerDerating1201101009080706050403020100110100110100tp=1us10us100us1ms10ms100msVDS/VRDS(ON)=VDS/IDDCID/A020406080100120140160180Tmb/CID%NormalisedCurrentDerating12011010090807060504030201001.0E-060.00010.0111000.010.1110Zth/(K/W)t/s0.50.20.10.050.020D=tptpTTPtDFebruary19993Rev1.000PhilipsSemiconductorsProductspecificationN-channelenhancementmodeIRFZ24NTrenchMOSTMtransistorFig.5.Typicaloutputcharacteristics,Tj=25˚C.ID=f(VDS);parameterVGSFig.6.Typicalon-stateresistance,Tj=25˚C.RDS(ON)=f(ID);parameterVGSFig.7.Typicaltransfercharacteristics.ID=f(VGS);conditions:VDS=25V;parameterTjFig.8.Typicaltransconductance,Tj=25˚C.gfs=f(ID);conditions:VDS=25VFig.9.Normaliseddrain-sourceon-stateresistance.a=RDS(ON)/RDS(ON)25˚C=f(Tj);ID=10A;VGS=10VFig.10.Gatethresholdvoltage.VGS(TO)=f(Tj);conditions:ID=1mA;VDS=VGS024681001020304050ID/AVDS/VVGS/V=16141210.09.59.08.58.07.57.06.56.05.55.04.54.0051015202523456789gfs/SID/A0510152025305060708090100110120RDS(ON)/mOhmVGS/V=ID/A66.578910-100-500501001502000.511.522.5BUK959-60Tmb/degCRds(on)normlisedto25degCa01234567890510152025ID/AVGS/VTj/C=17525BUK759-60-100-50050100150200012345Tj/CVGS(TO)/Vmax.typ.min.February19994Rev1.000PhilipsSemiconductorsProductspecificationN-channelenhancementmodeIRFZ24NTrenchMOSTMtransistorFig.11.Sub-thresholddraincurrent.ID=f(VGS);conditions:Tj=25˚C;VDS=VGSFig.12.Typicalcapacitances,Ciss,Coss,Crss