新型恒电位仪的设计与实现

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(11,430070;21,430071):,,VMOSFET,;(PWM),PWMSG3525A,,,,:;;PWM;:TP272:A:167124431(2004)1020067203TheDesignandRealizationofNovelPotentiostatYUANYou2xin1,LIUYang1,FENGQian2jiang2,SUJie2lei1(1.SchoolofAutomation,WuhanUniversityofTechnology,Wuhan430070,China;2.HubeiProvincialBuildingMaterialsIndustryResearchandDesignInstitute,Wuhan430071,China)Abstract:Inordertopreventmetalfromcorrosion,akindofnovelpotentiostatisdesigned,whichrealizestechnologyofcathodicprotectiontothemetal.TheconvertertechniqueofETOPandthehighfrequencyswitchingtechniqueareused.Thebuckhalf2bridgeconvertormadeofVMOSFETandtheoryofPWMareused.ThesignalofPWMisofferedbythecontrollerSG3525A,thefeedbackvoltageachievedfromoutputisusedtocontrolthechangeofout2voltage.Fromthepointofpractice,thistextpresentedthedesignmethodofthenovelpotentiostat.Therunandthetestresultsshowedthatthepotentiostatsystemdesignedbythismethodhavetheexcellentcharactersofhighstability,highsecurityandlowripplewaveofoutput2voltage.Keywords:potentiostat;highfrequency;PWM;convertor:2004204224.:(2001AA101C23)1:(19532),,1E2mail:[e-mail],,,,,,,,[1,2],,,,,,,,,,,©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[3,4],,I22222,Rt;Rg;Rj;Cj,Ur-0.85-1.5VUr-0.85V,-1.5VUr-0.85-1.5V[5]2,,VMOSFET(PWM)[6],,,,,2.123,[6],3VMOSFET,,,2.24VMOSFET,PWMSG3525A[7,8]PWMSG3525A,,500mA,MOS,400kHz,,Uout,SG3525A12,86200410©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(PWM),,,,;,,SG3525A,3,:220V50Hz,024V,,,,,5(a),5(b)5(c),,5(d),,,5,,,,,,[1],1IGBT[J]1,1999,(4):3738.[2],1[J]1,1996,(3):3539.[3],,,1PC[J]1,2001,17(8):2037.[4]1[J]1,1997,(2):1113.[5],,,1[J]1,1995,(6):4042.[6],,,1300W[J]1,2000,(3):713.[7],1ACöDC[J]1,2000,37(3):2225.[8]1DCöDC[J]1(),2000,24(3):247249.962610,: