018Logic-Process-Introduction

TMp.11018LogicProcessFlowFab1/PIE/LOGIC1/018GroupFab1TrainingProgramTMp.22•PurposeDefinitiontheprocedureofTCPcontroltoensurethestabilityofwaferprocessarewellcontrolledbothforin-lineandoff-lineprocessparameters1.STI/TrenchIsolation/STICMP2.TwinWellDefinition(1.8/3.3V)3.GateFormation4.LDDandSpacerFormation5.N/PMOSFormation6.SalicideFormation7.ILDLayer8.ContactCT9.M1Layer10.Via1toTopmetallayer11.Passivation•0.18LGProcesscontrolplanstage0.18LogicProcessFlowTMp.33C025C018Vcc(V)2.5/3.3(or5)1.8/3.3AAphotoDUVstepperDUVscannerGateoxide(A)48/7032/70Gatemateriala-Si/530CPoly-Si/620CPolyphotoDUVstepperDUVscanner+OPCSpacerNitridespacerCompositespacerSalicideTi-salicideCo-salicide(anti-si-pumping)ContactphotoDUVstepperDUVscanner+APSMmaskM-1photoDUVstepperDUVscanner+OPCIMDmaterialSACVDFSG(lowkmaterial)Via-1~4photoI-lineDUVscannerM2~4photoI-lineDUVscanner+OPC/NcapTMphotoI-lineDUVscannerTMp.44•018LogicDesignRuleis70%shrinkfrom025TechnologyDesignRuleC018C025AA0.22/0.280.3/0.4POLY0.18/0.250.24/0.36Contact0.22/0.220.3/0.3M10.23/0.230.32/0.32interVia0.26/0.260.36/0.36interMetal0.28/0.280.4/0.4TopVia0.36/0.360.36/0.36TopMetal0.44/0.460.44/0.46018/025BasicDesignRuleComparisonTMp.551.STI/TrenchIsolation•AAOXDEP(Padoxide110A/920oC45mindryO2)•AANitrideDEP1625A(780oC10-40PaSiH2Cl2/NH3)•SiONDARCDEP320A(DARC,320A,Hebased)•AAPHOTO/DUV(0.22umTCD;0.23+-0.023um)•AAET(0.22umTCD;0.22+-0.025um)SiN/Oxch1;Sietchch2,3500A,80degree)TMp.66STICMP•STILinerOX200A(1000oCdryO2)•ARPH/ETCH(AR/OD=+-0.1um)(Logicoperation:((AASize-0.4)Size0.4)Sizing-0.2))•STIHDP(5.8K)•STICMP(4100+-500A)Polish2.5KA/DIW-HFcleanForimproveSTICMPloadingeffect,AAsizelessthan0.8umwillbemerged.Fordishingimprovement:(1).Reverse-AAProcess(2).DummyAATMp.771.STI/TrenchIsolation-Continue...PadoxidePSubstrateODSiNHDPCVDwithArsputterAfterAR/PHEtch(Logicoperation:((AASize-0.4)Size0.4)Sizing-0.2))TMp.88STItopcornerrounding:Criticaltonarrow_width,smalldevice;STIedgestressanddivotprofilewillinducedevicedouble-humporleakageissue.0.18/0.28(TK)STIProfileAfterLiningoxideHDPDepRAprocessTrench-CMPNitrideremoveKeepanon-recessedprofile:STI_SietchdepthDHPDepTHKCMPOverpolish.Processstabilityisimportanttoavoidreverse-narrow-widtheffect(E,VtinducedworseParasiticTransistor)TMp.992.WELLDefinition•SACOXDEP(Dry110A,920oC45minO2)PWELLN_VTP-VTP-pthruNWELLNpthru•AANitrideremoval(1.50:1HF60sec+175oCH3PO460min)Measureoxide120A/Padoxideremove50:1HF2.5min;E/R=55A/min)PWellPhoto(V91_20)(PW/ODoverlay+-0.1um)PwellImplant:PwellB11(B160K15E3T00)NAPTImplant:NAPTB11(B025K55E2T00)VTNImplant:VTIMPIn115(D170K70E2T00)NWellPhoto(V92_20)(NW/ODoverlay+-0.1um)NwellImplant:NwellP31(P440K15E3T00)N-fieldImplant:PAPTP31(P140K50E2T00)PAPTImplant:VTPA75(A130K11E3T00)NMOS1.8/3.3VPMOS1.8/3.3VAnti-punch-thruAnti-Latch-UpVtadjustmentTMp.10102.WellFormation/VtAdjustPSubstratePwell191maskPwellNAPTVTNB11Pwell/NAPT/VTNImplantNwell192maskP31Nwell/P_APT/VTPImplantNwellPAPTVTPConventionalAdvanced018/15WellEngineerimplwithdrive-inVtwithadditionmaskRetragradewellHE(MeV+RTA)well,VtwithinonemaskGateN+PolyN+/P+polyLDDimplLDDPocketUltra-lowenergyS/DimplS/DDouble-Diff-Drain(improveleakage)TMp.1111•SACOXIDEREMOVE•GATE1OxideDEP(800oC,diluteWet,O2;50+-3A)(for015/13…useNOwetoxide)•Dual-GateDUVPH•DGET(50:1HF75sec;E/R=55A/min)Caro’sstrip(H2SiO4+H2O2)•GATE2OxideDEP(750oC,WetO2;900oCanneal;32+-2A)•POLYDEPOSITION(620oC2000A,Undopedpoly/crystalizedflatpoly)thickgateoxidethingateoxidePoly3.GateFormation(I)3.3V1.8VWetoxide:ForTDDB(TDDB即TIMEDEPENDENTDIELECTRICBREAKDOWN)issueTMp.1212DACDEP(DARC,320A,Hebased)•POLYPHOTO(DUVscanner,(0.18umTCD0.18+-0.015um;Po/OD:+-0.07um)•PolyGateEtch:1.Hardbake/2.Polyetch3.polymerdip(100:1HF10sec)4.PRstrip6.AEI/CD(0.18umTCD0.18+-0.015um)•7.Oxidemeasure(Trenchox3550+-600A,Odox10A)8.SiONmaskremove(50:1HF5sec+H3PO47min.)PolyRe_Oxidation(1000oC,RTO20+-4Aforetchdamagerecovery)N-WellP-WellGateFormation(II)TMp.1313N-WellP-WellNNPP4.LDDandSpacerFormationNitrideSpacerNLLPHOTO(1.8Vdevice)(In-linemonitorOVL/CD)PLLPHOTO(1.8Vdevice)(In-linemonitorOVL/CD)PLHPHOTO(3.3Vdevice)(In-linemonitorOVL/CD)NLHPHOTO(3.3Vdevice)(In-linemonitorOVL/CD)ONOSpacerDEP(In-linemonitorONOTHK)SpacerET(In-linemonitorremainingOXTHKandSTIOXTHK)TMp.14144-1.LDDFormationNLDD1Photo:Mask114NPocketimp(D130K25E3T30R445)NLDDimp(A003K70E4T00)PLDD1Photo:Mask113P-pocketimp(A130K35E3T30R445)PLDD-2Photo:Mask115PLDDimp:(F005K25E4T00)LDD-Drive:RTA(950C,10sec)•NLDD-2Pho:Mask116NLDD-2imp1.(A050K30E3T00)NLDD-2imp2.(P030K50E3T00)0.18umGenericLogicDeviceImplantCondition1.8VNMOS1.8VPMOS3.3VNMOS3.3VPMOSP-Field:B/160K/1.5E13/T00P-Field:B/160K/1.5E13/T00B/25K/5.0E12/T00B/25K/5.0E12/T00In/170K/7.0E2/T00In/170K/7.0E2/T00VTP:P/440K/1.5E13/T00VTP:P/440K/1.5E13/T00P/140K/5.0E12/T00P/140K/5.0E12/T00As/130K/1.0E13/T00As/130K/1.0E13/T00Anneal:1000C,10SAnneal:1000C,10SAnneal:1000C,10SAnneal:1000C,10SGateOx-2:32AGateOx-2:32AGateOx:70AGateOx:70ALDDN-:In/130K/2.5E13/T30/R445As/3K/9.5E14/T00LDDP-:AS/130K/3.5E13/T30/R445PLDD2:BF/5K/3.0E14/T00LDDRTA:950C,10SLDDRTA:950C,10SLDDRTA:950C,10