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P.1P.1NikonG-line&I-lineStepperwith2inchloaderP.2P.2General•Thissystemexposesa5:1reductionofareticlepatternontoawaferthroughstep-and–repeatoperations.Itautomaticallyperformsreticlepositioningandexposurefocusing.•Thesystemalsoautomaticallyperformspatternregistrationusingthelaserstepalignmentsystem.P.3P.3General接觸式接觸式接觸式接觸式(Contact)(Contact)(Contact)(Contact)SchematicofwaferexposureusingamaskMaskintypicalprojection/reductionlithographysystem鏡頭鏡頭鏡頭鏡頭(Lens)(Lens)(Lens)(Lens)P.4P.4ConfigurationMainbody(1)Reductionprojectionopticalsystem(2)Illuminationopticalsystem(3)Autofocussystem(4)Reticlealignmentsystem(5)Autoreticleblindsystem(6)Waferglobalalignmentsystem(7)Stepmonitoralignmentsystem(8)Laserstepalignmentsystem(9)Interferometerunit(10)X-Ystage(11)Wafertable(12)Waferloader(13)ReticleloaderP.5P.5ConfigurationControlRack(1)Stagecontroller(2)Interferometercontroller(3)Waferalignmentcontroller(4)Reticlecontroller(5)Lenscontroller(includingautomaticlasercompensator)(6)Waferloadercontroller(7)Powersupply(8)Reticleloadercontroller(9)Minicomputersystem(10)OperationPanel(11)CRTP.6P.6•Resolution(PR=1um):G6:=0.65㎛㎛㎛㎛i8:=0.5㎛㎛㎛㎛•ReductionProjectionOpticalSystem:ReductionRate=5:1•Reticlesize:5inch•ExposureArea:G6:15mm××××15mm(Max)i8:20mm××××20mm(Max)Function&SPECBySEMByOMP.7P.7•ExposurewavelengthG-line(436nm)•ExposurewavelengthI-line(365nm)•IlluminationOpticalSystem(1)G-lineExposurePower550㎽/㎠ormore(measuredonwaferundernewlamp,inflashmode)I-line(I7)ExposurePower600㎽/㎠ormoreI-line(I8)ExposurePower350㎽/㎠ormore(measuredonwaferundernewlamp,innormalmode)(2)Exposuretimesettingrange0.03secto9.999secand0sec.(3)G-LineUltra-high-pressuremercurylamp1000WI-LineUltra-high-pressuremercurylamp2000W•AutoFocus&LevelingSystem•WaferLoadRepeatability±0.10㎛Function&SPECP.8P.8RETICLEANDWAFERSPECIFICATIONS(1)Size5Inch××××5Inch(2)Thickness=2.29+/-0.1mm(3)MaterialQuartzglassorlow-expansionglass(4)TypeLow-reflectionchromiummaskFunction&SPEC-Reticle5inch5inchAlignmentkey(Ry,Rx,Rθθθθ)Effectarea:75mmx75mm-G6Effectarea:87.5mmx87.5mm-I7Effectarea:100mmx100mm-I8P.9P.9Function&SPEC-Reticledesign5inchP1P2P3P4EffectareaP.10P.10Function&SPEC-ReticledesignMaskReticleP.11P.11Function&SPEC-ReticleAlignmentBinaryMaskBarcodeMainPatternFrameFiducialMarkP.12P.12Function&SPEC-ReticleAlignmentP.13P.13AlignmentNikonStepper對準系統包含二大部份,光罩對準系統與晶片對準系統.光罩對準系統是將光罩從Reticlelibrary傳送至ReticleStage上並計算rotation與光罩位置而baselinecheck是量測各sensor相對於Stage的位置,並用來對準光罩與晶片.晶片對準系統則是先找到晶片平邊之後(Pre-alignment)傳送至stage內藉由searchalignment找到找到找到找到整個晶片整個晶片整個晶片整個晶片的中心點的中心點的中心點的中心點,然後再由EGA(EnhanceGlobalAlignment)找尋找尋找尋找尋每個每個每個每個SHOT的中心點的中心點的中心點的中心點,最後進行曝光的程序.對準對準對準對準Sensor:(Searchalignment&EGA都可以使用以下四種對準都可以使用以下四種對準都可以使用以下四種對準都可以使用以下四種對準Sensor)•WGA(WaferGlobalAlignment)Sensor•LSA(LaserStepperAlignment)Sensor1.LIA(LaserInterferometricAlignment)Sensor–G7以後才有此以後才有此以後才有此以後才有此Sensor.2.FIA(FiledImageAlignment)Sensor–G7以後才有此以後才有此以後才有此以後才有此Sensor.P.14P.14AlignmentWGAsensor(WaferGlobalAlignmentsensor)Waferalignmentmark一般而這是指將晶片定位的Mark.LSAMark,Stepalignmentmark都是屬於waferalignmentmark.P.15P.15AlignmentLSAsensor(LaserStepAlignmentsensor)是將所感測的光強度之類比訊號轉換成數位訊號,然後此數位訊號(含相位)同步與stage當時的對應座標一同儲存起來當作LSA訊號的座標位置.當Laserbeam打到alignmentmark時,光會因此產生散射,而散射光會沿著原路徑折回,在被detector偵測並收集前,會先將0次波(反射光)過濾掉,收集之後做光電轉換並做訊號處理.LSAMarkP.16P.16AlignmentLIAsensor(LaserInterferometricAlignmentsensor)LIA是一種穿越Lens與外差式的對準系統,他也是使用He-NeLaser做光源,而LIA兩道雷射光束頻率的不同是藉由AOM(Acoustic-Optic-Module)造成的,LIA的對準訊號由兩種訊號組成;一種被稱為wafersignal,它是AOM所產生的兩道雷射光;另一種是referencesignal,它是由參考光學系統所產生的,這兩種訊號都是25KHz頻率的sin波.LIA的偵測系統是處理這兩種訊號的相位差用來判定wafer所移動的距離.LIA的對準光束所照亮的範圍大約為50*80um,LIA的特色是不會因為wafer表面不平坦或是不規則的對準mark邊綠而讓判斷對準訊號產生誤差.P.17P.17AlignmentFIAsensor(FieldImageAlignmentsensor)FIA系統是用wafer上的alignmentmark當作影响訊號(imagesignal)並將它轉換成videosignal做訊號處理並計算alignmentmark所在位置.而FIA的目的是提昇之前的重複性不佳的狀況,以及預防金屬所造成的異常.FIA有下列特色與優點:1.因為它是使用宽頻的光,所以干涉狀況很微小.2.它的鏡頭所見即是他alignmentmark的影响狀況.3.鹵素燈較適用於多層次的光阻覆蓋或是有摻雜顏色的光阻.4.不會因為晶片表面崎嶇不平而影响它對準的狀況.5.不會因為金屬層表面的光現象影响到它的重複性不佳的狀況發生.P.18P.18AlignmentG6AlignmentSystemP.19P.19AlignmentI7/I8AlignmentSystemP.20P.20L:1500mmH:2030mmD:1820mmDimension&WeightL:620mmH:1555mmD:1500mmMainBody:2,400~3,000kgControlRack:500kgP.21P.21ControlRack-ImageOperationPanelPCandControlboardP.22P.22MainBody-ImageLamphoursCDA&VACdisplayP.23P.23MainBody-Image壓縮機高低壓表壓縮機高低壓表壓縮機高低壓表壓縮機高低壓表LampHousingInverterReticlestorage2x2InchLoaderP.24P.24MainBody–Image(waferflow)WaitArmPre-Alignement2InchLoaderSlideArmWaitArmPushBarLoader/UnloaderChuckFetchArmP.25P.25Exposuremode–G-lineShotsize:15mmx15mmTotal:16shotsShotsize:7.5mmx7.5mmTotal:49shotsP.26P.26Exposuremode–I-lineShotsize:17.5/20mmx17.5/20mmTotal:9shotsShotsize:8.5mmx8.5mmTotal:36shotsP.27P.27ExposuremodeShotsize:15mmx15mmLensShotsize:7.5mmx7.5mmLensWaferflatness(6~8um)good:resultisgoodWaferflatness(15um)nogood:resultisbad(defocus)Waferflatness(6~8um)good:resultisgoodWaferflatness(15um)nogood:resultisgoodTTVrange:6~8umP.28P.28StepperExposureP.29P.29TimeFrame**Exposuretime:200ms**Loadwafer–fromcassettetowaitarm:10secAlignment–fromwaitarmtoalignmentm