SGLS266D−OCTOBER2004−REVISEDDECEMBER2004!TypicalSize6,6mmX9,8mmFEATURESQualificationinAccordanceWithAEC-Q100(1)QualifiedforAutomotiveApplicationsCustomer-SpecificConfigurationControlCanBeSupportedAlongWithMajor-ChangeApproval30-mΩ,12-APeakMOSFETSwitchesforHighEfficiencyat6-AContinuousOutputSourceandSink0.9-V,1.2-V,1.5-V,1.8-V,2.5-V,and3.3-VFixedOutputVoltageDevicesWith1%InitialAccuracyInternallyCompensatedforEasyUseandMinimalComponentCountFastTransientResponseWidePWMFrequency−Fixed350kHz,550kHzorAdjustable280kHzto700kHzLoadProtectedbyPeakCurrentLimitandThermalShutdownIntegratedSolutionReducesBoardAreaandTotalCost(1)ContactTexasInstrumentsfordetails.Q100qualificationdataavailableonrequest.APPLICATIONSLow-Voltage,High-DensitySystemsWithPowerDistributedat5Vor3.3VPointofLoadRegulationforHighPerformanceDSPs,FPGAs,ASICsandMicroprocessorsBroadband,NetworkingandOpticalCommunicationsInfrastructurePortableComputing/NotebookPCsDESCRIPTIONTheSWIFTfamilyofdc/dcregulators,theTPS54611,TPS54612,TPS54613,TPS54614,TPS54615,andTPS54616low-inputvoltagehigh-outputcurrentsynchronous-buckPWMconvertersintegrateallrequiredactivecomponents.Includedonthesubstratearetrue,high-performance,voltageerroramplifiersthatprovidehighperformanceundertransientconditions;anunder-voltage-lockoutcircuittopreventstart-upuntiltheinputvoltagereaches3V;aninternallyandexternallysetslow-startcircuittolimitin-rushcurrents;andapowergoodoutputusefulforprocessor/logicreset,faultsignaling,andsupplysequencing.TheTPS54611−6devicesareavailableinathermallyenhanced28-pinTSSOP(PWP)PowerPADpackage,whicheliminatesbulkyheatsinks.TexasInstrumentsprovidesevaluationmodulesandtheSWIFTdesignersoftwaretooltoaidinquicklyachievinghigh-performancepowersupplydesignstomeetaggressiveequipmentdevelopmentcycles.Thesedeviceshavelimitedbuilt-inESDprotection.TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.#$%&'()*#&$#+,''-$*)&%.,/0#+)*#&$1)*-2'&1,+*+&$%&'(*&.-+#%#+)*#&$.-'*3-*-'(&%-4)$*',(-$**)$1)'15)'')$*62'&1,+*#&$.'&+-#$71&-$&*$-+-)'#06#$+0,1-*-*#$7&%)00.)')(-*-'2Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.2001−2004,TexasInstrumentsIncorporatedPowerPADandSWIFTaretrademarksofTexasInstruments. SGLS266D−OCTOBER2004−REVISEDDECEMBER2004−AEfficiency−%EFFICIENCYAT350kHz12345678910111213142827262524232221201918171615AGNDVSENSENCPWRGDBOOTPHPHPHPHPHPHPHPHPHRTFSELSS/ENAVBIASVINVINVINVINVINPGNDPGNDPGNDPGNDPGNDPWPPACKAGE(TOPVIEW)THERMALPADAVAILABLEOPTIONSOUTPUTPACKAGEDDEVICESOUTPUTPACKAGEDDEVICESTJOUTPUTVOLTAGEPLASTICHTSSOP(PWP)(1)TJOUTPUTVOLTAGEPLASTICHTSSOP(PWP)(1)0.9VTPS54611QPWPRQ11.8VTPS54614QPWPRQ1−40°Cto125°C1.2VTPS54612QPWPRQ1(2)−40°Cto125°C2.5VTPS54615QPWPRQ1−40Cto125C1.5VTPS54613QPWPRQ1−40Cto125C3.3VTPS54616QPWPRQ1(1)ThePWPpackageistapedandreeledasdenotedbytheRsuffixonthedevicetype(i.e.,TPS54616QPWPRQ1).SeeapplicationsectionofdatasheetforPowerPADdrawingandlayoutinformation.(2)ProductPreview SGLS266D−OCTOBER2004−REVISEDDECEMBER2004µFto0.1-µFlow-ESRcapacitorconnectedfromBOOTtoPHgeneratesafloatingdriveforthehigh-setFETdriver.NC3NoconnectionPGND15−19Powerground.Highcurrentreturnforthelow-sidedriverandpowerMOSFET.ConnectPGNDwithlargecopperareastotheinputandoutputsupplyreturnsandnegativeterminalsoftheinputandoutputcapacitors.PH6−14Phaseinput/output.Junctionoftheinternalhigh-sideandlow-sidepowerMOSFETs,andoutputinductor.PWRGD4Powergoodopendrainoutput.High-ZwhenVSENSE≥90%Vref,otherwisePWRGDislow.NotethatoutputislowwhenSS/ENAisloworinternalshutdownsignalactive.RT28Frequencysettingresistorinput.ConnectaresistorfromRTtoAGNDtosettheswitchingfrequency.SS/ENA26Slow-start/enableinput/output.Dualfunctionpinwhichprovideslogicinputtoenable/disabledeviceoperationandcapacitorinputtoexternallysetthestart-uptime.FSEL27Frequencyselectinput.Provideslogicinputtoselectbetweentwointernallysetswitchingfrequencies.VBIAS25Internalbiasregulatoroutput.Suppliesregulatedvoltagetointernalcircuitry.BypassVBIASpintoAGNDpinwithahighquality,low-ESR0.1-µFto1-µFceramiccapacitor.VIN20−24InputsupplyforthepowerMOSFETswitchesandinternalbiasregulator.BypassVINpinstoPGNDpinsclosetodevicepackagewithahighquality,low-ESR1-µFto10-µFceramiccapacitor.VSENSE2Erroramplifi