干法刻蚀中静电吸盘对产品良率的影响

-32-931,211.2002402.201203VLSIESCETCHCVDLAMResearchTCP9400bipolar-ESCTN306A1681-1070200903-0032-04ESC’sInfluencetoProductioninPolyEtchandMethodstoImproveESC’sLifetimeDONGJia-wei,HUANGQi-yu1.MicroelectronicCollege,ShanghaiJiaotongUniversity,Shanghai200240,China;2.SemiconductorManufacturingInternationalShanghaiCorporation,Shanghai201203,ChinaAbstract:InthemodernVLSImanufacturing,ESChavebeenwidelyusedinETCH,CVDprocessforitsgoodheattransfer,uniformitycontrol,andlowdefectproduction.ESCplaysaveryimportantruleintheprocesschambersystem.BasedonLAMTCP9400etcheronpolysiliconmassproduction,thispaperanalysesthathowthebipolar-ESCinfluencestheproductionunderdifferentparametersettings,andhowtomonitortheproblemsoftheESCsystem.Keywords:ESC;chuckingvoltage;biasvoltage;leakagecurrent;lifetime2008-09-29170G.A.Wardly[1]2ESCESCESC93Vol9No3ELECTRONICS&PACKAGING7120093-33-93ab1CoulombJ-RJ-RJ-R[2,3]ESCJ-RJ-RESC3ESC3.1LAMTCP9400LAMTCP940013.56MHzESCLAMTCP9400ESCESCESC3ESCDonutsbasebasebasebase23ESC3.2BipolarESCESCsheathsheathESC2-34-93selfbiasRFLAMESCbase-350Vdonuts+350VselfbiasESC810V590VESC[4]ESCESCTCP9400ESCRF3.3BipolarESCESCVHePESCTUnderCutESCUnderCut4CD-SEM54CD-SEM53.3BipolarESC8T9cm3/min12cm3/min4J-R-35-93ESCESCESC1G.A.Wardly.Electrostaticwaferchuckforelectronbeammicrofabrication[J].Rev.Sci.Instrum.,1973,1044:1506-1509.2F.A.Johnsen,K.Rahbek,J.Inst.Electr.Eng.1923,61:723.3ShuQina,AllenMcTeer.WaferdependenceofJohnsen-Rahbektypeelectrostaticchuckforsemiconductorprocesses[C].JournalofAppliedPhysics,2007.4.[C].20061.1981-IPSynopsys29Confirma™CHIPit®HAPSConfirmaConfirmaIPSynopsysSoftware-to-Silicon/SoCFPGAConfirmaConfirmaFPGAConfirmaCHIPitHAPS™CHIPitManagerProSCE-MICertify®FPGAIdentify®ProTotalRecall™Synplify®PremierFPGASynopsys