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IntegratedSiliconSolution,Inc.——1-800-379-47741Rev.E02/14/06IS61LV25616ALISSI®Copyright©2006IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytimewithoutnotice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.FEATURES•High-speedaccesstime:—10,12ns�CMOSlowpoweroperation�Lowstand-bypower:—Lessthan5mA(typ.)CMOSstand-by�TTLcompatibleinterfacelevels�Single3.3Vpowersupply�Fullystaticoperation:noclockorrefreshrequired�Threestateoutputs�Datacontrolforupperandlowerbytes�Industrialtemperatureavailable�Lead-freeavailable256Kx16HIGHSPEEDASYNCHRONOUSCMOSSTATICRAMWITH3.3VSUPPLYDESCRIPTIONTheISSIIS61LV25616ALisahigh-speed,4,194,304-bitstaticRAMorganizedas262,144wordsby16bits.ItisfabricatedusingISSI'shigh-performanceCMOStechnol-ogy.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpowerconsumptiondevices.WhenCEisHIGH(deselected),thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownwithCMOSinputlevels.EasymemoryexpansionisprovidedbyusingChipEnableandOutputEnableinputs,CEandOE.TheactiveLOWWriteEnable(WE)controlsbothwritingandreadingofthememory.AdatabyteallowsUpperByte(UB)andLowerByte(LB)access.TheIS61LV25616ALispackagedintheJEDECstandard44-pin400-milSOJ,44-pinTSOPTypeII,44-pinLQFPand48-pinMiniBGA(8mmx10mm).FUNCTIONALBLOCKDIAGRAMA0-A17CEOEWE256Kx16MEMORYARRAYDECODERCOLUMNI/OCONTROLCIRCUITGNDVDDI/ODATACIRCUITI/O0-I/O7LowerByteI/O8-I/O15UpperByteUBLBFEBRUARY20062IntegratedSiliconSolution,Inc.——1-800-379-4774Rev.E02/14/06IS61LV25616ALISSI®TRUTHTABLEI/OPINModeWEWEWEWEWECECECECECEOEOEOEOEOELBLBLBLBLBUBUBUBUBUBI/O0-I/O7I/O8-I/O15VDDCurrentNotSelectedXHXXXHigh-ZHigh-ZISB1,ISB2OutputDisabledHLHXXHigh-ZHigh-ZICCXLXHHHigh-ZHigh-ZReadHLLLHDOUTHigh-ZICCHLLHLHigh-ZDOUTHLLLLDOUTDOUTWriteLLXLHDINHigh-ZICCLLXHLHigh-ZDINLLXLLDINDINPINDESCRIPTIONSA0-A17AddressInputsI/O0-I/O15DataInputs/OutputsCEChipEnableInputOEOutputEnableInputWEWriteEnableInputLBLower-byteControl(I/O0-I/O7)UBUpper-byteControl(I/O8-I/O15)NCNoConnectionVDDPowerGNDGround1234567891011121314151617181920212244434241403938373635343332313029282726252423A0A1A2A3A4CEI/O0I/O1I/O2I/O3VDDGNDI/O4I/O5I/O6I/O7WEA5A6A7A8A9A17A16A15OEUBLBI/O15I/O14I/O13I/O12GNDVDDI/O11I/O10I/O9I/O8NCA14A13A12A11A10PINCONFIGURATIONS44-PinTSOP(TypeII)andSOJIntegratedSiliconSolution,Inc.——1-800-379-47743Rev.E02/14/06123456789101112IS61LV25616ALISSI®1234567891011333231302928272625242312131415161718192021224443424140393837363534CEI/O0I/O1I/O2I/O3VDDGNDI/O4I/O5I/O6I/O7I/O15I/O14I/O13I/O12GNDVDDI/O11I/O10I/O9I/O8NCTOPVIEWWEA0A1A2A3A4A5A6A7A8A9A17A16A15A14A13A12A11A10OEUBLB123456ABCDEFGHLBOEA0A1A2N/CI/O8UBA3A4CEI/O0I/O9I/O10A5A6I/O1I/O2GNDI/O11A17A7I/O3VDDVDDI/O12NCA16I/O4GNDI/O14I/O13A14A15I/O5I/O6I/O15NCA12A13WEI/O7NCA8A9A10A11NC48-PinminiBGAPINCONFIGURATIONS44-PinLQFPPINDESCRIPTIONSA0-A17AddressInputsI/O0-I/O15DataInputs/OutputsCEChipEnableInputOEOutputEnableInputWEWriteEnableInputLBLower-byteControl(I/O0-I/O7)UBUpper-byteControl(I/O8-I/O15)NCNoConnectionVDDPowerGNDGround4IntegratedSiliconSolution,Inc.——1-800-379-4774Rev.E02/14/06IS61LV25616ALISSI®DCELECTRICALCHARACTERISTICS(OverOperatingRange)SymbolParameterTestConditionsMin.Max.UnitVOHOutputHIGHVoltageVDD=Min.,IOH=–4.0mA2.4—VVOLOutputLOWVoltageVDD=Min.,IOL=8.0mA—0.4VVIHInputHIGHVoltage2.0VDD+0.3VVILInputLOWVoltage(1)–0.30.8VILIInputLeakageGND≤VIN≤VDDCom.–22µAInd.–55ILOOutputLeakageGND≤VOUT≤VDDCom.–22µAOutputsDisabledInd.–55Notes:1.VIL(min.)=–2.0Vforpulsewidthlessthan10ns.ABSOLUTEMAXIMUMRATINGS(1)SymbolParameterValueUnitVTERMTerminalVoltagewithRespecttoGND–0.5toVDD+0.5VTSTGStorageTemperature–65to+150°CPTPowerDissipation1.0WNote:1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectreliability.OPERATINGRANGEVDDRangeAmbientTemperature10ns12nsCommercial0°Cto+70°C3.3V+10%,-5%3.3V+10%Industrial–40°Cto+85°C3.3V+10%,-5%3.3V+10%IntegratedSiliconSolution,Inc.——1-800-379-47745Rev.E02/14/06123456789101112IS61LV25616ALISSI®CAPACITANCE(1)SymbolParameterConditionsMax.UnitCINInputCapacitanceVIN=0V6pFCOUTInput/OutputCapacitanceVOUT=0V8pFNote:1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.POWERSUPPLYCHARACTERISTICS(1)(OverOperatingRange)-10-12SymbolParameterTestConditionsMin.Max.Min.Max.UnitICCVDDDynamicOperatingVDD=Max.,Com.—100—90mASupplyCurrentIOUT=0mA,f=fMAXInd.—110—100ISBTTLStandbyCurrentVDD=Max.,Com.—50—45mA(TTLInputs)VIN=VIHorVILInd.—55—50CE≥VIH,f=fMAX.ISB1TTLStandbyCurrentVDD=Max.,Com.—20—20mA(TTLInp