半导体制冷散热强度对制冷性能的影响08

1671-6612200803-025-03∗InfluenceofsemiconductorrefrigerationradiationintensityonrefrigerationperformanceDAIWei(CollegeofphysicalandelectronicinformationChinaWestNormalUniversity,Nanchong637002,China)AbstractTocarriesontheheattransferanalysisthroughsemiconductorrefrigerationcouple,Thedifferentialequationbetweenthesemiconductorrefrigerationperformanceandthehotendradiationintensitywereobtained.Carriedonthevaluecomputationandthesolutionunderthethirdkindboundaryconditiontothedifferentialequationhasobtainedtheradiationintensitytotherefrigerationperformanceinfluencecurve.Fromthisobtains:Alongwiththeradiationintensityunceasingenhancement,thethermoelectricityrefrigerationperformancegraduallyenhances,thentendstoslowly.Fromefficientconsideration,Inthesemiconductorrefrigerationhasthebesthotendradiationintensity.Therefore,shouldreasonablyoptimizeinthepracticalapplicationdesignsandimprovesthehotendcoolingsystem.Therefore,shouldreasonablyoptimizeinthepracticalapplicationdesignsandimprovesthehotendcoolingsystem.Keywordsintensityofheatemission;semiconductorrefrigeration;performanceofrefrigeration2007-07-25∗(1%)[2]22320086RefrigerationandAirConditioningVol.22No.3June2008.2527·26·20081lAIλρscThT(hTcT)AlRIqV/2=0=x1fT1α1=x2fT2α0//22=+λvqdxTd111/(),0hhfAdTdxslTATTxλα−=−−=222/(),cfcAdTdxslTATTxlλα−=−−=3(1)(2)(3),21111222211()2()(),02vhhfvhfhfvhhfqslTTxTTxAqAlATTslTATslAqslTlllTTxlAαλλλααααλλλ⎡⎤=−⋅+−−⋅+⎢⎥⎣⎦−−++++−−+≤≤4112(/)()()CCxlhfhCQslTAdTdxATTIRsITTλα==+=−−−−5)()/(110fhxhhTTAdxdTAslTQ−=+==αλ6)(2chchTTsIRIQQP−+=−=7)(/chTTsIRIPU−+==8)()()(2211chchfhCTTsIRITTsIRITTAPQ−+−−−−==αε9TEC11270514104−−⋅×=KVs111000−−⋅Ω=cmα1118−−⋅⋅=KmWλmml15=mmmmA4040×=AI6.4=(5~9)2342cQ1α1α1αcQ1α31αhQ1α,hQPT∆1αhcQPQ=+4223·27·1α23cQhQ1αε1α(1)(2)(3)[1],[M]1993,32-37.[2],[J],2001,(2):37-41,48.[3][J],1998,65(4):46-49.[4],,[J],1993,(4):1-6.[5],[J],1990,(4):50-59.