氮化铝陶瓷覆铜基板的研制

284Vol.28,No.420008JOURNALOFTHECHINESECERAMICSOCIETYAugust,2000,(,200433):,AlNAl2O3,AlN,AlN.AlN,,110N/cm.,(SEM)(EDX),AlN.:;;;:TQ174:A:0454-5648(2000)04-0385-03PREPARATIONOFTHECOPPERMETALLIZEDALUMINUMNITRIDESUBSTRATEXieJin,ZongXiangfu(DepartmentofMaterialScience,FudanUniversity,Shanghai200433)Abstract:Athickcopperfoil(0.3mm)wasbondeddirectlyonanaluminumnitridesubstratebyheating.TheAlNsubstratewasoxidizedbeforehandathightemperature.Theeffectsofox2idationtemperatureandoxidationtimeoftheAlNceramiconbondingstrengthwerestudied,anoptimumoxidationtechnolo2gywasputforward.Themaximumbondingstrengthisabout110N/cm.Theadhesionstrengthsofthecopperplatesarehighforsamplesoxidizedathightemperaturethanthoseoxidizedatlowtemperature.ThisisattributedtotheexistenceofresidualstrainsbetweentheoxidelayerandtheAlNsubstrate.Further2more,thebondingstructurebetweenthecopperandtheAlNceramicwasinvestigatedbymeansofSEMandEDX.ItisfoundthattheoxidephaseatAlNsubstrateplayanimportantroleinthebondingprocess.Keywords:aluminumnitrideceramic;copper;oxidize;bond:1999-11-23.:(1968),,,.,.-,,(:GTR,IGBT)[1].,AlN,Al2O3,,,,.1990Yasutoshi[2]AlNAg-Pd;1990Hironori[3]1700TiN-Mo;1992Yasutoshi[4]Ag-Cu-Ti3mPaAlN.-[5],AlN,AlN.1AlN1800.1mm15mm15mm,3.2g/cm3.0.3mm.AlN.9001200,30min10h.AlN,-,[5].2,Al0.17OAlN.Al2O3-1669.75kJ/mol,AlN(-241.42kJ/mol),.AlNAl2O3,AlN,,mAlN,Receiveddate:1999-11-23.Biography:XieJin(1968),male,doctor,lecturer.[6].Al2O3AlN(7.310-6/,4.510-6/),,,.2.1AlN,1.Cu-AlNAlN,2a,2b,2c.AlN.1Fig.1Schematicofpeelingstrengthtest(1)2a:900,.,AlN.,,.1100,78N/cm.,.AlN.[7]1200,7kN/mm2.,[6],1000130minAlN,120060min.AlN,.,AlN.(2)2b,2c11001200.:,,,.,,.1100,4h,110N/cm,.,,.1200,,,.(m),110012002AlNFig.2Variationsofbondingstrengthandmwithoxidiz2ingtemperatureoroxidizingtime.,.(3)AlNAl2O3,(16.310-6/)Al2O3,,..,,.68320003SEMFig.3SEMphotographsofthesurfaceofdifferentsamples2.2,,AlN.,.3a,3b,3c,3d.(1),AlN,.AlN,EDX(4a1)Cu,Cu-Cu2O.,,AlN,.(Cu-Al2O3,[5]).,,-.AlN-Al2O3,.,,.(2)3d.().EDX(4b1)Cu,AlO.,N,Y.Cu2O,Al2O3Y2O3,AlN.(),.4EDXFig.4EDXanalysisofthesurfaceofdifferentsamples(391)783284::[1],,,.[J].,1989,17(2):189195.[2],,,.[J].,1989,18(1):917.[3]KatoK.TunableUVgenerationto0.2325minLiB3O5[J].IEEEJQuantumElectron,1990,26(7):11731175.[4],,.(LBO)[J].,1992,21(2):156160.[5]HuXB,JiangSS,HuangXR,etal.TheformationmechanismsofdislocationsandnegativecrystalsinLiB3O5singlecrystals[J].JCrystGrowth,1996,163:266271.(387)1Table1Elementsanalysisindifferentsamplesurface(inmolefraction)w/%ElementsNOAlYZrAgTiCuSurfaceofceramic0.6412.3025.510.481.390.000.0959.59Surfaceofcopper0.6815.1512.280.840.360.660.3769.673AlN,AlN,110N/cm.Cu-AlNAlN.,,.:[1]SunYS,Johnoe.Anewhybridpowertechniqueutilizingadirectcoppertoceramicbond[J].IEEETransElectronDevices,1976,23(8):961964.[2]YasutoshiK,ShigeruT,KazujiY,etal.Ag-Pdthickfilmcon2ductorforAlNceramic[J].IEEETransComHybrManufTech,1990,13(2):306312.[3]HironoriA,FumioU,NobuoI,etal.Titaniumnitride-molybde2nummetallizingmethodforaluminumnitride[J].IEEETransComHybrManufTech,1990,13(2):457461.[4]YasutoshiK,ShigeruT,SatoruO,etal.Bondingmechanismbe2tweenaluminumnitridesubstrateandAg-Cu-Tisolder[J].IEEETransComHybrManufTech,1992,15(3):361368.[5],.Cu-Al2O3[J].,1995,29(4):6677.[6],.AlN[J].,1996,24(6):699702.[7].[D].:,1995.:,,:,,,16,,:ISSN1008-0473,CN51-1510/TU;:62-63;,,36;:5101034000030:331;:610051,:;:010517000015;::[phone],4333777-269;:[phone];::[e-mail];(chinalnfo),::!193284:LBO