AlN陶瓷基板在空气中的热氧化行为探讨

265Vol.26,No.5199810JOURNALOFTHECHINESECERAMICSOCIETYOctober,1998AlN­¬­­(­)(¬)(SIMS)X(XRD)AlN8501100.,AlN.10min,,.110020min,AlN.,,AlN.,,,TQ174.56AlNSi,[1].,AlN.,AlN,AlN[2,3].,AlN.,AlN.,,AlN[4,5],.AlN.,,.AlN70060h[6].AlN700800,-Al2O3[7,8].(TGA)AlN,,AlNw,w.AlN[3,612],TGA.TGA,,9001400,.AlN.(SIMS)X(XRD),AlN.1997105.,:69391203.:,,32,,,100084.©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(1102)()SIMS.SIMSRiberMIQ-156,Cs+,0.06A,10keV,45,0.48mm0.29mm,5%,3.710-7Pa.AlN,2keV.XRDCuK,4/min.2SIMS,AlN,.1SIMSFig.1NegativeSIMSmassspectraofsurfacesofseveralsamples1AlN,unannealed;2AlN,annealedat1100for40min;3Sapphire:(1),().,.,.(2),,.(3).SIMS,,SIMS.1SIMS.,AlN-;110040min,.,AlO-2.SIMS,Al-,O-2,AlN-AlO-.6651998©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(1m);90min,O-2,AlO-,Al-,,SIMS().2g3,,.765265:AlN©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(25-1133)AlN.AlN,AlDyO3.AlN,Dy2O3AlNAl2O3,.Dy2O3Al2O33:DyAlO3,Dy4Al2O9,Dy3Al5O12,n(Al)/n(Dy)1/1,1/2,5/3.Dy2O3,n(Al)/n(Dy),Al2O3,.DyAlO3,,AlN,Dy2O3.110040minAlNXRD42,3-Al2O3,-Al2O3.3,AlN:8651998©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.()4AlNXRDFig.4XRDpatternsofAlNceramicsubstrates1Unannealed;21100,40min4AlN+3O2(g)2Al2O3+2N2(g)G298.15=-2016.554kJ/mol(1)2AlN+2.5O2(g)Al2O3+2NO(g)G298.15=-834.685kJ/mol(2)2AlN+3.5O2(g)Al2O3+2NO2(g)G298.15=-905.384kJ/mol(3)2AlN+3O2(g)Al2O3+N2O3(g)G298.15=-868.438kJ/mol(4)2AlN+4O2(g)Al2O3+N2O5(g)G298.15=-889.943kJ/mol(5),700800.SIMS,AlN.(10min),8501100,AlN,AlN,AlN.,AlN,.110020min,AlN;40min,.110040min,,,XRD3-Al2O3,SIMS,,-Al2O3,.,8501100,AlN-Al2O3,,,-Al2O3.Katnani[6]X(XPS),AlN(AlON).AlN,AlN,.965265:AlN©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(2):3132NiwaK,HashimotoK.Interfacesinceramicsubstrates.ScriptaMetallurgicaetMaterialia,1994;31(8):10073VirkarAV,JacksonTB,CutlerRA.Thermodynamicandkineticeffectsofoxygenremovalonthethermalconductivityofaluminumnitride.JAmCeramSoc,1989;72:17634IwaseN,AnzaiK,ShinozakiK,etal.Thickfilmanddirectbondcopperformingtechnologiesforaluminumnitridesubstrate.IEEETransComponHybridsManufTechnol,1985;8(2):2535IwaseN,AnzaiK,ShinozakiK.Aluminumnitridesubstrateshavinghighthermalconductivity.SolidStateTechnol,1986;29(10):1356KatnaniAD,PaparthomasKL.Kineticsandinitialstagesofoxidationofaluminumnitride:thermogravimetricanalysisandX-rayphotoelectronspectroscopystudy.JVacSciTechnol,1986;A5(4):1357SatoT,HaryuK,EndoT,etal.Hightemperatureoxidationofhot-pressedaluminumnitridebywatervapour.JMaterSci,1987;22:26358SuryanarayanaD,MatienzoLJ,SpencerDF.Behaviorofaluminumnitrideceramicsurfacesunderhydrothermaloxidationtreatments.IEEETransComponHybridsManufTechnol,1989;12(4):5669.-:[].:,199510LavrenkoVA,AlexeeyAF.Oxidationofsinteredaluminumnitride.CeramInt,1983;9(3)):8011SuryanarayanaD.Oxidationkineticsofaluminumnitride.JAmCeramSoc,1990;73(4):112812RobinsonD,DieckmannR.Oxidationofaluminiumnitridesubstrates.JMaterSci,1994;29:1949SURVEYONINITIALOXIDATIONBEHAVIOROFAlNCERAMICSUBSTRATEINAIRYueRuifeng­¬WangYouxiang­ChenChunhua­(­StateKeyLaboratoryofSurfacePhysicsandInstituteofSemiconductors,ChineseAcademyofSciences)(¬InstituteofMicroelectronics,TsinghuaUniversity)ABSTRACTSecondaryionmassspectrometry(EIMS)andX-raydiffraction(XRD)measurementwereem2ployedtostudytheinitialoxidationbehaviorofAlNceramicsubstrateinairat8501100.Theresultsshow(continuedonp.597)0751998©1994-2009ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:IEEE,1996:4398TuttleB,VoigtJA,HeadleyTJ,etal.Ferroelectricthinfilmmicrostructuredevelopmentandrelatedpropertyenhancement.Ferro,1994;151:11PREPARATIONANDFORMATIONMECHANISMOFPZTTHINFILMSBYMODTECHNIQUEBaoDinghuaZhangLiangyingYaoXi(ElectronicMaterialsResearchLaboratory,XianJiaotongUniversity)ABSTRACTPZTthinfilmswerepreparedonPt/Ti/SiO2/Si(111)substratesbymetallo-organicdecomposition(MOD)technique.XRDanalysisshowsthatthethinfilmspossessgoodcrystallinity,andnopyrochlorephaseexistsinthinfilms.ItisfoundbyAESmeasurementthatthecompositionofthethinfilmsishomogeneous,nocarbonex2istsinthinfilms,andthesurfaceofthinfilmisnotlead-rich.Theformationmechanismisdiscussedandtheper2ovskitegraingrowthprocessisqualitativelyexplainedinthepaper.KEYWORDSleadzirconatetitanatethinfilm,metallo-organicdecomposition,formationmechanism,gra