EBC10074_iW1780-01iW626-00ForQC20

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GeneralDesignSpecification:1.ACInputRange85-264VAC2.DCOutput5.0V/2A,9V/1.67A,12V/1.25A3.Meet“30mW@5V”No-LoadStandbyPowerConsumptionRequirement4.Meet“CoC_V5.0Tier2”EfficiencyRequirement5.MaxOutputRipple&Noise120mViW1780-01+iW626-00ForQC2.0Design(5V2A/9V1.67A/12V1.25A,SR)(EBC10074)May04,2015DescriptionSymbolMinTypMaxUnitsCommentInputVoltageVIN85264VAC2WireFrequencyfLINE4750/6063HzNo-loadInputPower(230VAC)30mWMeasuredunder5VoutputOutputUSBCableDCImpedanceRdc0.175Ω24AWG/1m5.0V/2AOutputVoltageVOUT4.7555.25VMeasuredattheendofUSB-BOutputCurrentIOUT02.0AOverCurrentProtectionIOCP2.2ARipple&NoiseVRIPPLE80mVP_PNote1AverageEfficiency79.0%RefertoCoC_V5_Tier29V1.67AOutputVoltageVOUT8.559.09.45VMeasuredattheendofUSB-BOutputCurrentIOUT01.67AOverCurrentProtectionIOCP1.8ARipple&NoiseVRIPPLE120mVP_PNote1AverageEfficiency84.6%RefertoCoC_V5_Tier212V1.25AOutputVoltageVOUT11.412.012.6VMeasuredattheendofUSB-BOutputCurrentIOUT01.25AOverCurrentProtectionIOCP1.4ARipple&NoiseVRIPPLE120mVP_PNote1AverageEfficiency84.5%RefertoCoC_V5_Tier2EnvironmentalConductedEMIMeetsCISPR22B/EN55022BOutput(-)isconnectedtoEarthSafetyDesignedtomeetIEC60950,UL1950ClassIIAmbientTemperatureTAMB040°CFreeconvection,sealevelNote1:Add0.1uFceramiccapacitorand10uFE-capattheendofconnectorandsetoscilloscopeat20MHzbandwidth.1.SpecificationDialogSemiconductor@20152DialogSemiconductor@201532.Schematic31.5mmER2010FTU06N70(6A700V),TO-25146mmAO4292BottomViewTopViewiW1780-01PrimarySensingControlleriW671-00iW626-00DialogSemiconductor@201543.CircuitBoardPhotographDialogSemiconductor@201554.1BillofMaterialItemQty.Ref.Description11U1iW1780-01,off-linedigitalPSR&PWM&VMScontroller&QC2.0controller,SOIC-821U2PC817,photocoupler31U3iW626-00,QC2.0controller,SOT23-641U4AO4292,100V8A,23mΩ,SOIC-851U5iW671-00,SR&AVPcontroller,SOIC-861L1450uH,DMInductor,core:5x7,wire:0.16mmX140Ts71L28.5mH,CMchock,core:EE8.3,0.19mmX65Ts81L3MPH201210S4R7MT,4.7uH,chipinductor,SUNLORD91Q1FTU06N70,6A700V,N-MOSFET,TO-251101Q2DMZ6005,600V12mA,depletionmodeMOSFET,SOT23111Q3DMZ1521E,150V0.15A,depletionmodeMOSFET,SOT23121Q5BC817,NPNtransistor,SOT23131F1T2A250V,fuse,size:4*8141T1ER2010,transformer,verticaltype151C110uF,400V,low-ESRE-cap,Ф8mmX10mm,Aishi161C21nF,250V,X7R,SMD-0805171C322uF,400V,low-ESRE-Cap,Ф8mmX18mm,Aishi181C4220pF,50V,X7R,SMD-0603191C522pF,50V,X7R,SMD-0603201C622pF,100V,X7R,SMD-0603212C7,C1310uF,25V,X7R,SMD-1206222C8,C9330uF/16V,solid-cap,ULR6.3*9,Aishi231C10470pF,250V,X7R,SMD-0805241C11100nF,50V,X7R,SMD-0603251C144.7uF,25V,X7R,SMD-0805261CY1220pF,250V,Y-cap271Z218V±5%,zenerdiode,SMD281D2FR207,2A1000V,fastrectifierdiode,SMD-1206S291D4BAV103,1A200V,fastswitchingdiode(Trr=50nS),SMD-1206S304D1,D3,D6,D101N4148,fastswitchingdiode,SMD-323314D5,D7,D8,D9WSGC10MH,1A/1000V,rectifierdiode,SMD-1206SDialogSemiconductor@201564.2BillofMaterialItemQty.Ref.Description322R1,R1A620K±5%,SMD-0805332R2,R4150RΩ±5%,SMD-1206341R3470KΩ±5%,SMD-1206353R5,R18,R1210KΩ±5%,SMD-0603361R633RΩ±5%,SMD-0805372R7,R81.80Ω±1%,SMD-0805381R9100Ω±5%,SMD-0603392R10,R117.5KΩ±5%,SMD-0603401R1368Ω±5%,SMD-1206411R153.6KΩ±1%,SMD-0603421R162.2KΩ±5%,SMD-0603431R17100KΩ±5%,SMD-0603441R194.7KΩ±1%,SMD-0603451R2012Ω±5%,SMD-0603461R21300Ω±5%,SMD-0603471R220Ω±5%,SMD-0603481R24330KΩ±5%,SMD-0603491R2515KΩ±5%,SMD-0603501USBUSB,horizontal,2Acurrent511PCBDoublesideboard,FR-4BAER2010,thewidthofwindingslotis4.0mmMATERIALS:1.Core:ER2010,Ae=40.8mm2(FerriteMaterialJP95orequivalent)2.Bobbin:ER2010Vertical3.MagnetWires(pri):Type2-UEW4.Magnetwires(sec):TripleInsulatedWire5.LayerInsulationTape:3M1298orequivalentSCHEMATIC4Ts9Tsx2ELECTRICALSPECIFICATIONS:1.PrimaryInductance(Lp)=450uH±7%@10KHz/1V2.ElectricalStrength=3KV,50/60Hz,1Min(pins1~5topinsA~B)FINISHED:1.Varnishthecompleteassembly2.Coreisconnectedtopin2321Bias/ForwardSecondary4(F)1(S)Shielding1Ttape2TstapeA(F)2(F)CoreisconnectedtoPin-218TsPrimary-24TopBottom8Ts2(S)2UEW0.19mmx118Ts–Primary2(Clockwise)WindingStartpin-5&Endpin-3in“Clockwise”direction–lookingfromTopsideoftheBobbinB(S)2Tstape2(S)518Ts3(F)3(S)5(S)1Ttape2Tstape1Rotatingdirectionofwindingmachine5Primary-1TripleInsulatedWire0.65mmX14Ts–Secondary(Anti-clockwise)2UEW0.12mmx38Ts–Shielding(Clockwise)2UEW0.12mmx19Ts–Bias(Clockwise)2UEW0.12mmx29Ts–Forward(Clockwise)2UEW0.19mmx118Ts–Primary1(Clockwise)DialogSemiconductor@201575.TransformerDrawingNote:Dot(●)denoteelectricalstart.ElectricalstartcouldbedifferenttoMechanical/Windingstart.XX*Note:OutputvoltageismeasuredattheendofPCB.VINPINVOUTIOUTVRIPPLEPOUTηAverageOCP(VAC)(W)(V)(A)(mVP-P)(W)(%)η(%)(A)0.0165.0700222.925.0500.5542.5386.475.875.1301.0665.1387.399.095.2401.5677.8686.4712.515.3602.07610.7285.690.0165.0700241.205.0500.2411.0184.172.915.0500.5582.5386.775.855.1301.0645.1387.699.025.2401.5617.8687.1412.415.3602.07410.7286.380.0205.0600241.275.0500.2391.0179.532.995.0500.5612.5384.455.975.1201.0595.1285.769.065.2401.5637.8686.7512.315.3502.07810.7086.920.0245.0600233.055.0600.5622.5382.956.045.1201.0605.1284.779.125.2401.5607.8686.1812.385.3502.07110.7086.43264852.282302.312.3111586.512.2987.0085.97CoC_V5_T

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