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©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:100026281(2006)02200972071,2,3,3,13(1,230026;2,210016;3,230026):,10nm,,,:;;:TN30517;TN405;TG115121+513:A:2006202207:(No190406009).Foundationitem:NationalNaturalScienceFundationofChina(No190406009).:(1979-),(),,.3:(1964-),(),,,.2003,100nm,65nm,2009157nm45nm[1,2]100nm,,,,,,KrFArF,(RETs)(NA),(OPC)(PSM),30nm,,X,[3]:,;,,,12060[46],,,,:,1:,©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:1(ZrO),1800K,1[6]Table1CharactersofsomeconventionalelectronsourcesinEBLsystems(APcm2Psr)(eV)(Pa)10525m2310-4LaB610610m2310-610820nm01910-71095nm012210-8,(,),,20nm,10nm[7],,,,,2JEOLLeicaRaith2[8]2Table2CharacteristicsofsomeEBLsystemsJEOL9300FSVB6UHRRaith,eLine50kV,100kV50kV-100kV100V-30kV20bit50MHz20bit50MHz16bit10MHz500m112mm2mm20nm35nm20nm25nm25nm40nm25nm20nm60nm12inch8inch4inchJEOLJEOL9300FS,X;()LeicaVB6UHREWF89J.Chin.Electr.Microsc.Soc.25©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[9,10][11][12][13,14]Pt[15,16]3311[17],,,,,,,,,,,,PP:(PMMA),114PMMA,,,,130170,950KPMMA,2%,3000rpm200nm,100CPcm2500CPcm2,13methylisobutylketoneisopropanol(MIBKIPA),11MIBKIPAIPA30sPMMA,10nm,,,MethylMethAcrylateandMethAcrylicAcid[P(MMA2MAA)],PMMA34,160PBS(PolyButene212Sulfone)EBR29(acopolymeroftrifluoroethyla2chloroacrylateandtetrafluropropyla2chloroacrylate)ZEP(acopolymerofchloromethacrylateandmethylstyrene)PMMA,:,,,Shipleyadvancedlithography(SAL),anepoxycopolymerofglycidylmethacrylateandethylacrylate[P(GMA2EA)](COP),apartiallychloromethylatedpolystyrene(CMS)COP,CMS312PP(lift2off)(),2()(2a);(2b),;(2c);(2d),P,,(undercut),,992:©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(),,,1keV,,10,3,,,,,,[19],,MonteCarlo,,[2022],,[23]320kV,[18]Bar=4mFig.3SEMmicrographofapositiveresistpatternonsiliconexposedwitha20kVelectronbeamdemonstratestheproximityeffect,wheresmallisolatedexposedareasreceivelessdoserelativetolargerormoredenselyexposedareas[18].Bar=4m4411:10nm[24],,10nm:5%PMMAmethyl2isobutyl2ketone(MIBK)3000rpm,140nm,17090min;(30nm)001J.Chin.Electr.Microsc.Soc.25©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:210220230mCPcm2,60s;b:80s120s180s,230mCPcm2[24]Fig.4SEMofthenanogaps.a:Fabricatedusingthesamedevelopingtimeof60s,butdifferentelectrondosesof210,220,and230mCPcm2(fromtoptobottom);b:Fabricatedusingthesamee2beamdoseof230mCPcm2butdifferentpatterndevelopingtimesof80s,120s,and180s(fromtoptobottom)[24]respectively.4a,210mCPcm260s,25nm,,220mCPcm2230mCPcm2,15nm12nm230mCPcm2,,80s120s180s,11nm9nm7nm,4b,8nm9nm100%,3nm4nm15%,,10121013,412(Singleelectrontransistor)[25]1947,,,5,,(RIE),,413(Quantizedconductanceatomicswitch)[26](QCAS)6a,QCAS,100nmPd150nm6b:(1nm),,,,;,,,1MHz,600mV[26]5,10nm,,1012:©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[25]Fig.5SEMmicrographandexperimentalcircuitryofthesiliconnanopillar.AnacsignalVacwithasuperimposeddcbiasVisappliedtothesourceSandthenetcurrentIDatdrainDisdetectedwithacurrentamplifier.ThethirdelectrodeGisfloating[25].6a:(Bar=10m);b:,,QCAS[26]Fig.6a:SEMimageoftheQCAS(Bar=10m);b:SchematicdiagramsoftheQCAS.As2formedswitched2onstate(top),switched2offstate(middle)andswitched2onstateaftertheinitialswitching2offprocess(bottom)[26].:[1].,2005,121:3-6.[2].,2004,62:65-68.[3]FontanaRE,etal.IEEETransactionsonMagnetics,2002,38:95.[4],,,.,2005,121:42-45.[5]TsengAA,etal.IEEETransactionsonElectronicsPackagingManufacturing,2003,26:141-148.[6]Rai2ChoudhuryP.HandbookofMicrolithography,MicromachiningandMicrofabrication.Volume1:201J.Chin.Electr.Microsc.Soc.25©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[7]MarounK,FerryDK.JVacSciTechnolB,1996,14:75-79.[8]JEOL,Leica,Raith.[9]UtkeI,DwirB,LeiferK,CicoiraF,DoppeltP,HoffmannP,KaponE.Microelectron.Eng,2000,53:261.[10]M«lhaveK,MadsenDN,RasmussenAM,etal.NanoLett,2003,3:1499.[11]YenMY,ChiuCW,ChenFR,KaiJJ,LeeCY,ChiuHT.Langmuir,2004,20:279.[12]FujitaJ,IshidaM,IchihashiT,OchiaiY,KaitoT,MatsuiS.JVacSciTechnolB,2003,21:2990.[13]MatsuiS,IchihashiT,MitoM.JVacSciTechnolB,1989,7:1182.[14]RackPD,RandolphS,DengY,FowlkeJS,ChoiY,JoyDC.ApplPhysLett,2003,82:2326.[15]TakaiM,KishimotoT,MorimotoH,etal.MicroelectronEng,1998,41P42:453.[16]YavasO,OchiaiC,TakaiM,HosonoA,OkudaS.ApplPhysLett,2000,76:3319.[17]HelbertJN,DaouT.In:HelbertJNed.HandbookofVLSIMicrolithography,ParkRidge,NJ:Noyes,2001.ch.2.[18]KratschmerE.JVacSciTechnol,1981,19:1264-1268.[19]BroersAN,HarperJME,MolzenWW.ApplPhysLett,1978,33:392-394.[20],,,.,200655:148-154.[21],,,.,2004,23:363.[22],,,.,2005,24:465-468.[23]HowardRE,HuEL,JackelLD,Grabbe