搜索
.Migdal...,,..,,Eliashberg.,,..,,(),.,:,.:Nesting,,.3(,,100871),.,..,,AbstractThebehaviorofelectronsandthevacuumfieldinanopticalmicrocavityissignificantlydifferentformthatinfreespace,resultinginaseriesofcomplicatedphysicaleffectsinthecavityquantumelectrodynamics.Semiconductoropticalmicrocavitiesareanexcellentexampleofanewgenerationofcondensedmattermicro2resonatorsforexploringtheeffectsofcavityquantumelectrodynamicsanddevelopingavarietyofnewmicrocavititydeviceswiththeirpossibleapplications.Areviewofthecurrentresultsondifferentkindsofsemiconductormicrocavitiesispresented.Keywordssemiconductormicrocavity,cavityquantumelectrodynamics,opticalmicrocavity3;.19951222,1996311.2561917,.;.1960,.,.,.,,,.,,.,40,,,.,10.,(cavityquantumelectrodynamicsCQED)[1,2].,,.,(CQED),,,.1,..,EeEf,,Ü=Ee-Ef,,.,,Ü,.,,.,,,.(Ra2bi),.0A,EeEf.0().,.,t,exp(-t),..,,,,,.,,,.,,.35625(1996)11,,,,.,.,,,.,,.,,,,,.,,,,.(Rydberg)[13][4].1986,.,.2(Q).,.,0.110m[59].,.(2D),(0D).().1[8].1(a)(3D),1(b)2D,.(0D),,1(c),,.,.,,,,.2D.R=0.95,80,[2(1+R)/(1-R)]80,.1[8](a),Lm/n;(b),;(c),,,,.,.456,=442Vn3,,n,V.V/(2n)3,/.,10-5.V,.,V,,.1(c),,1.,,,,,,,.1,,,.2-.,[10].,.2[6]3,.3.1-(F-P)F2P.3.GaAsInGaAsInGaAsP,(DBR).Q,GaAsAlxGa1-xAsDBR,2099%,Q500.GaAsF-P,,,CQED[57].,F55625(1996)11-P0.05,,,F-PQ,.3F-P[7]InGaAsGaAsF-P(CQED).,[8,11].CQED-.4-[8],.,.4-[8]3.2(WG)(whisperinggalleerymode)Q,,,,Q,,5.WGLordRagleigh,500.WG,60,WG80.90,WGCQED.5WG[7]AT&TBell1992InGaAs/InGaAsPWG[12,13].,1mA.,DBR;210m;WGQ,.0.5m1.6m--.1.5m0.65mInGaAsP/InPInGaP/AlGaAs/GaAs,[1417],(1W),,656.1.6mInGaAs[18],0.2.,,,,.,.6(a)[18](AlGaAs,GaAs/AlGaAs,AlAs/AlGaAs);(b)[8]()3.3..,,,,.,Q.,6(a).6(b),..4,,.,,.(Gb/s),,.InGaAsInGaAsP,,,60Mbit/s200Mbit/s,,,.,70.,Q,.75625(1996)11[1]S.HarocheandD.Kleppner,PhysicsToday,42(1989),24.[2]S.HarocheandJ.M.Raimond,ScientificAmerican,268(1993),26.[3]R.G.Holet,E.S.Hilfer,D.Kleppner,Phys.Rev.Lett.,55(1985),2137.[4]G.Gabrielse,H.Dehmelt,Phys.Rev.Lett.,58(1987),66.[5]Y.Yamamoto,S.Mashida,G.Bjok,Optical&Quant.Electron.,24(1992),S125.[6]H.Yokoyama,K.Nishi,T.Anan,ibid,24(1992),S245.[7]Y.YamamotoandR.E.Slusher,PhysicsToday,46(1993),66.[8]R.E.Slusher,C.Weisbuch,SolidStateCommun.,92(1994),149.[9],,,(1995),276.[10]H.Yokoyama,M.Suzuki,Y.Nambu,Appl.Phys.Lett.,58(1991),2598.[11]C.Weishbuch,M.Nishioka,A.Ishikawaetal.,Phys.Rev.Lett.,69(1992),3314.[12]S.L.McCall,A.F.Levi,R.E.Slusheretal.,Appl.Phys.Lett.,60(1992),289.[13]A.F.Levi,R.E.Slisher,S.L.McCalletal.,Electron.Lett.,28(1992),1010.[14],,13(1994),301.[15]ZhangBei,WangRuopeng,DingXiaominetal.,SolidStateCommun.,91(1994),699.[16],,14(1995),253.[17]ZhangBei,ZouYinghua,ZhouHetainetal.,ProceedingofChina2JapanSymposiumonthinFilms,(editedbyZhuJunming),(1995),42.[18]P.L.Gourley,J.R.Wendit,G.A.Vawteretal.,Appl.Phys.Lett.,64(1994),687.[19]A.Dodabaiapur,L.T.Rothberg,T.M.Milleretal.,Appl.Phys.Lett.,64(1994),2486.[20]ZhangBei,ZhuangLei,LinYongetal.,SolidStateCommun.,97(1995),445.3(,,200433)Si,.,..,,AbstractDeltadopedsiliconisanoveltypeofsemiconductormaterial,theproper2tiesofwhicharetailoredbyboththeimpurityengineeringandthebandgapengineering.ThesepropertieshaveopenedupanewresearchfieldforlowdimensionalsemiconductorsaswellaspotentialapplicationsinnewSi2basedoptoelectronicandelectronicdevices.Inthispapertheprogressofdeltadopinginsiliconisreviewed.31995127,1996318.856