CLS032006-11-131TOSHIBASchottkyBarrierDiodeCLS03Switching-ModePowerSupply(Secondary-Rectification)Applications(LowVoltage)DC/DCConverterApplications•Forwardvoltage:VFM=0.58V(max)•Averageforwardcurrent:IF(AV)=10A•Repetitivepeakreversevoltage:VRRM=60V•Suitableforcompactassemblyduetosmallsurface-mountpackage:“L−FLATTM”(Toshibapackagename)AbsoluteMaximumRatings(Ta=25°C)CharacteristicsSymbolRatingUnitRepetitivepeakreversevoltageVRRM60VAverageforwardcurrentIF(AV)10(Note1)ANon-repetitivepeaksurgecurrentIFSM100(50Hz)AJunctiontemperatureTj−40~125°CStoragetemperaturerangeTstg−40~150°CNote1:Tℓ=70°CRectangularwaveform(α=180°),VR=30VNote2:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(“HandlingPrecautions”/DeratingConceptandMethods)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).ElectricalCharacteristics(Ta=25°C)CharacteristicsSymbolTestConditionMinTyp.MaxUnitVFM(1)IFM=3.0A(pulsetest)⎯0.36⎯VFM(2)IFM=5.0A(pulsetest)⎯0.41⎯PeakforwardvoltageVFM(3)IFM=10A(pulsetest)⎯0.530.58VIRRM(1)VRRM=5V(pulsetest)⎯7.0⎯μAPeakrepetitivereversecurrentIRRM(2)VRRM=60V(pulsetest)⎯0.11.0mAJunctioncapacitanceCjVR=10V,f=1.0MHz⎯345⎯pFThermalresistance(junctiontoambient)Rth(j-a)Devicemountedonaglass-epoxyboard(boardsize:50mm×50mm)(boardthickness:1.6t)(solderingland)Cathode5.7mm×6.2mmAnode4.5mm×3.4mm⎯⎯100°C/WThermalresistance(junctiontolead)Rth(j-ℓ)⎯⎯⎯5°C/WUnit:mm3.2±0.2①②①アノード②カソード②CATHODE①ANODEJEDEC⎯JEITA⎯TOSHIBA3-4F1AWeight:0.15g(typ.)CLS032006-11-132MarkingAbbreviationCodePartNo.S03CLS03StandardSolderingPadHandlingPrecautions1)Schottkybarrierdiodeshavereversecurrentcharacteristicscomparedtootherdiodes.ThereisapossibilitythatSBDwillcausethermalrunawaywhenusedunderhigh-temperatureorhigh-voltageconditions.Besuretotakeforwardandreverselossintoconsiderationduringdesign.2)Theabsolutemaximumratingsdenotetheabsolutemaximumratings,whichareratedvaluesthatmustnotbeexceededduringoperation,evenforaninstant.Thefollowingarethegeneralderatingmethodsthatwerecommendforwhendesigningacircuitincorporatingthisdevice.VRRM:Usethisratingwithreferenceto(1)above.VRRMhasatemperaturecoefficientof0.1%/°C.Takethistemperaturecoefficientintoaccountwhendesigningadeviceforoperationatlowtemperature.IF(AV):Werecommendthattheworstcasecurrentbenogreaterthan80%oftheabsolutemaximumratingofIF(AV)andthatTjbebelow100°C.Whenusingthisdevice,takethemarginintoconsiderationbyusinganallowableTamax-IF(AV)curve.IFSM:Thisratingspecifiesthenon-repetitivepeakcurrent.Thisappliesonlytoabnormaloperation,whichseldomoccursduringthelifespanofthedevice.Tj:Deratethisratingwhenusingthedeviceinordertoensurehighreliability.WerecommendthatthedevicebeusedataTjofbelow100°C.3)Thermalresistancebetweenjunctionandambientfluctuatesdependingonthemountingconditionconditionofthedevice.Whenusingthedevice,designthecircuitboardandsolderinglandsizetomatchtheappropriatethermalresistancevalue.4)RefertothedatabookonRectifiersforfurtherinformation.Unit:mm2.62.51.84.82.95.9CLS032006-11-133Pulsetest25°C0.010.00.20.40.81.00.1110075°CTj=125°C10Devicemountedonaglass-epoxyboard(boardsize:50mm×50mm)(boardthickness:1.6t)(solderingland)Cathode5.7mm×6.2mmAnode4.5mm×3.4mmMaximumallowabletemperatureTamax(°C)InstantaneousforwardvoltagevF(V)iF–vFInstantaneousforwardcurrentiF(A)AverageforwardcurrentIF(AV)(A)PF(AV)–IF(AV)AverageforwardpowerdissipationPF(AV)(W)AverageforwardcurrentIF(AV)(A)Tℓmax–IF(AV)MaximumallowableleadtemperatureTℓmax(°C)AverageforwardcurrentIF(AV)(A)Tamax–IF(AV)α=60°360°0.004812168.02.010.0180°120°4.060020408010012014004816360°60020408010012014040816360°α=60°180°6.01212120°10000.1100100.30.530503005000.00110000.010.1100101Devicemountedonaglass-epoxyboard(boardsize:50mm×50mm)(boardthickness:1.6t)(solderingland)Cathode5.7mm×6.2mmAnode4.5mm×3.4mm0.0030.030.3330300Transientthermalimpedancerth(j-a)(°C/W)Timet(s)rth(j-a)–t153360°0°RectangularwaveformαConductionangleα360°0°αVR=30VIF(AV)ConductionangleαRectangularwaveform360°0°αVR=30VIF(AV)ConductionangleαRectangularwaveform0.6CLS032006-11-134ReversecurrentIR(mA)01101002040100120Ta=25°Cf=50Hz353050AveragereversepowerdissipationPR(AV)(W)ReversevoltageVR(V)Cj–VR(typ.)JunctioncapacitanceCj(pF)NumberofcyclesSurgeforwardcurrent(non-repetitive)PeaksurgeforwardcurrentIFSM(A)JunctiontemperatureTj(°C)IR–Tj(typ.)ReversevoltageVR(V)PR(AV)–VR(typ.)1015100500100010000Ta=25°Cf=1MHz30103100500050Pulsetest0.0010204060801001201600.111010000.01140VR=5V10V20V30Vα=60°0.0010603.01.07.040360°120°180°240°300°2050501005.08060Rectangularwaveform360°0°ConductionangleαTj=125°CVRα40V60V2.04.06.030CLS032006-11-135RESTRICTIONSONPRODUCTUSE20070701-EN•Theinformationcontainedhereinissubjecttochangewithoutnotice.•TOSHIBAiscontinuallyworkingtoimprov