开关电源电磁发射预测及改善技术

开关电源电磁发射预测及改善技术Prediction&ImproveonEMIemissionsofaSMPS报告人：和军平（报告人：和军平（报告人：和军平（报告人：和军平（Dr.Dr.Dr.Dr.））））Nov10Nov10Nov10Nov10Nov10Nov10Nov10Nov10,20,20,20,20,20,20,20,201212121212121212hehehehejunping@junping@junping@junping@hitszhitszhitszhitsz....eduedueduedu.cn.cn.cn.cnShenzhenCityShenzhenCityShenzhenCityShenzhenCityShenzhenCityShenzhenCityShenzhenCityShenzhenCity电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping一.开关电源面临的EMI问题二.开关电源电磁干扰发射形成机理三.开关电源电磁干扰发射的预测四.开关电源电磁兼容抑制方法五.结论内内内内容容容容电源网电源网电源网电源网随着人们对清洁环境、生活品质要求不断提高，全球主要国家对电气、电子产品电磁兼容性的要求日益严格！电磁兼容性的要求日益严格！电磁兼容性的要求日益严格！电磁兼容性的要求日益严格！欧盟美国中国加拿大辐射发射测试传导发射测试全球新能源产品市场响应/成本压力！开发周期延长、体积增加、成本上升！开发周期延长、体积增加、成本上升！开发周期延长、体积增加、成本上升！开发周期延长、体积增加、成本上升！一.开关电源发展面临的EMI问题电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping开关电源继续向高频化、高功率密度化、数字化、高频化、高功率密度化、数字化、高频化、高功率密度化、数字化、高频化、高功率密度化、数字化、高效、低成本高效、低成本高效、低成本高效、低成本方向迅速发展！电源网电源网电源网电源网更高的工作频率、更高的dv/dt、di/dt，更强更强更强更强高频频谱高频频谱高频频谱高频频谱！！！！更强的EMI源dBf1/pi*ton更近的距离，更强的电磁耦合，更加复杂电更加复杂电更加复杂电更加复杂电磁干扰形成和传播！磁干扰形成和传播！磁干扰形成和传播！磁干扰形成和传播！TelecomPSMagneticfield电磁兼容设计面临着新挑战！电磁兼容设计面临着新挑战！电磁兼容设计面临着新挑战！电磁兼容设计面临着新挑战！dttttrrrrATNov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping传导测试测试SMPSSMPSSMPSSMPSLISNLGNEMIreceiver50Ohm50Ohm50uH50uH0.1uF0.1uFSMPSSMPSSMPSSMPS80cmChamber辐射发射测试EMIreceiver二.开关电源电磁干扰发射形成机理电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping2.1电磁干扰的源头•VoltagespikeVoltagespikeVoltagespikeVoltagespike•HighFrequencyHighFrequencyHighFrequencyHighFrequencyRinging(EMI)Ringing(EMI)Ringing(EMI)Ringing(EMI)Current,IswVoltage,VswReverseReverseReverseReverseRecoveryRecoveryRecoveryRecovery开通瞬态关断瞬态A:功率晶体管uDUDMuD0uDRIDMiDttdiD/dttfrr(a)(b)开通特性IRM(b)uDURMuD0uDRIFiDttdiF/dttrr(a)Q1Q2dirr/dtirrt0t2t1关断特性（硬恢复）B:功率二极管f1/pi*tonring电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping2.2电磁干扰的形成和传播电磁干扰传播的机理A:沿着主电路、输入/输出线及其寄生参数传播,与与与与主功率回路相同主功率回路相同主功率回路相同主功率回路相同;;;;B:沿着杂散电磁耦合通道传播，隐蔽！隐蔽！隐蔽！隐蔽！C:直接向周围空间辐射传播，，，，复杂！复杂！复杂！复杂！无源器件的高频寄生参数ESLESRCLESREPC电阻器电容器电容器电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingTransformerGDSGDSGDSGDSheatsinkheatsinkheatsinkheatsink杂散电磁耦合参数电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping高dv/dtdv/dtdv/dtdv/dt导体earthearthearthearthVs杂散耦合参数电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping传导干扰发射的形成和传播FlybackFlybackFlybackFlybackDMDMDMDM电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingFlybackFlybackFlybackFlybackCMCMCMCM高dv/dtdv/dtdv/dtdv/dt导体面积一定要尽可能小电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingFlybackFlybackFlybackFlybacktotaltotaltotaltotal电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingCM/DM分析也是分析其它拓扑结构电源的有效方法！S1S1S1S1D1D1D1D1LaLaLaLaD2D2D2D2D5D5D5D5CdCdCdCdRdRdRdRdD3D3D3D3D4D4D4D4PFCInverterInverterInverterInverter电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping220μFL1MRloadD10.47uF450uHInputcableOutputcableicm1icm2辐射干扰的形成和传播PFCPFCPFCPFC电源网电源网电源网电源网Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10Nov,10,2012,2012,2012,2012,2012,2012,2012,2012HejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunpingHejunping3.1传导干扰发射的预测时域仿真法1:BuildhighfrequencymodelofcomponentsandthePCB;1:BuildhighfrequencymodelofcomponentsandthePCB;1:BuildhighfrequencymodelofcomponentsandthePCB;1:BuildhighfrequencymodelofcomponentsandthePCB;2:ExtractparasiticparametersbetweenthecomponentsandthePCB2:ExtractparasiticparametersbetweenthecomponentsandthePCB2:ExtractparasiticparametersbetweenthecomponentsandthePCB2:ExtractparasiticparametersbetweenthecomponentsandthePCB3:PredictEMIemissionwithcircuitsimulator.3:PredictEMIemissionwithcircuitsimulator.3:PredictEMIemissionwithcircuitsimulator.3:PredictEMIemissionwithcircuitsimulator.4:Compliancecheckandop