HMBT8550中文资料

HI-SINCERITYMICROELECTRONICSCORP.Spec.No.:HE6813IssuedDate:1997.08.11RevisedDate:2002.10.25PageNo.:1/3HMBT8550HSMCProductSpecificationHMBT8550PNPEPITAXIALTRANSISTORDescriptionTheHMBT8550isdesignedforgeneralpurposeamplifierapplications.Features•HighDCCurrent:hFE=150-400atIC=150mA•ComplementarytoHMBT8050AbsoluteMaximumRatings•MaximumTemperaturesStorageTemperature...........................................................................................-55~+150°CJunctionTemperature....................................................................................+150°CMaximum•MaximumPowerDissipationTotalPowerDissipation(Ta=25°C)...............................................................................225mW•MaximumVoltagesandCurrents(Ta=25°C)VCBOCollectortoBaseVoltage........................................................................................-25VVCEOCollectortoEmitterVoltage.....................................................................................-20VVEBOEmittertoBaseVoltage.............................................................................................-5VICCollectorCurrent......................................................................................................-700mACharacteristics(Ta=25°C)SymbolMin.Typ.Max.UnitTestConditionsBVCBO-25--VIC=-10uABVCEO-20--VIC=-1mABVEBO-5--VIE=-10uAICBO---1uAVCB=-20VIEBO---100nAVEB=-6V*VCE(sat)---500mVIC=-500mA,IB=-50mAVBE(on)---1VVCE=-1V,IC=-150mA*hFE100-500VCE=-1V,IC=-150mAft150--MHzVCE=-10V,IC=-20mA,f=100MHzCob--10pFVCB=-10V,f=1MHz*PulseTest:PulseWidth≤380us,DutyCycle≤2%ClassificationOfhFERankB9CB9DB9ERange100-200150-300250-500SOT-23HI-SINCERITYMICROELECTRONICSCORP.Spec.No.:HE6813IssuedDate:1997.08.11RevisedDate:2002.10.25PageNo.:2/3HMBT8550HSMCProductSpecificationCharacteristicsCurveCurrentGain&CollectorCurrent1010010000.1110100100010000CollectorCurrent(mA)hFESaturationVoltage&CollectorCurrent1101001000100000.1110100100010000CollectorCurrent(mA)SaturationVoltage(mV)VBE(sat)@IC=10IBVCE(sat)@IC=10IBOnVoltage&CollectorCurrent100100010000110100100010000CollectorCurrent(mA)OnVoltage(mV)VBE(on)@VCE=1VCutoffFrequency&CollectorCurrent1010010001101001000CollectorCurrent(mA)CutoffFrequency(MHz)VCE=10VCapcitance&Reverse-BiasedVoltage1101000.1110100ReverseBiasedVoltage(V)Capacitance(pF)CobSafeOperatingArea110100100010000110100ForwardVoltage(V)CollectorCurrent(mA)PT=100msPT=1sPT=1msHI-SINCERITYMICROELECTRONICSCORP.Spec.No.:HE6813IssuedDate:1997.08.11RevisedDate:2002.10.25PageNo.:3/3HMBT8550HSMCProductSpecificationSOT-23Dimension*:TypicalInchesMillimetersInchesMillimetersDIMMin.Max.Min.Max.DIMMin.Max.Min.Max.A0.11020.12042.803.04J0.00340.00700.0850.177B0.04720.06301.201.60K0.01280.02660.320.67C0.03350.05120.891.30L0.03350.04530.851.15D0.01180.01970.300.50S0.08300.10832.102.75G0.06690.09101.702.30V0.00980.02560.250.65H0.00050.00400.0130.10Notes:1.DimensionandtolerancebasedonourSpec.datedSep.07,1997.2.Controllingdimension:millimeters.3.Maximumleadthicknessincludesleadfinishthickness,andminimumleadthicknessistheminimumthicknessofbasematerial.4.Ifthereisanyquestionwithpackingspecificationorpackingmethod,pleasecontactyourlocalHSMCsalesoffice.Material:•Lead:42Alloy;solderplating•MoldCompound:Epoxyresinfamily,flammabilitysolidburningclass:UL94V-0ImportantNotice:•Allrightsarereserved.ReproductioninwholeorinpartisprohibitedwithoutthepriorwrittenapprovalofHSMC.•HSMCreservestherighttomakechangestoitsproductswithoutnotice.•HSMCsemiconductorproductsarenotwarrantedtobesuitableforuseinLife-SupportApplications,orsystems.•HSMCassumesnoliabilityforanyconsequenceofcustomerproductdesign,infringementofpatents,orapplicationassistance.HeadOfficeAndFactory:•HeadOffice(Hi-SincerityMicroelectronicsCorp.):10F.,No.61,Sec.2,Chung-ShanN.Rd.TaipeiTaiwanR.O.C.Tel:[phone]Fax:[phone]•Factory1:No.38,KuangFuS.Rd.,Fu-KouHsin-ChuIndustrialParkHsin-ChuTaiwan.R.O.CTel:886-3-5983621~5Fax:[phone]HJKDALGVCB321SStyle:Pin1.Base2.Emitter3.Collector3-LeadSOT-23PlasticSurfaceMountedPackageHSMCPackageCode:NMarking:RankCodeB9ControlCode