锂电保护系统设计与多节锂电池保护解决方案

PPTmPL001SeikoInstrumentsInc.Apr.,2011SIIICMulticellLi-ionBatteryProtectionIC2µARealTimeClock-0.35µAVoltageDetector-1.6µA5-cellLiprotection2.LowVoltageOperation-0.3VChargepump-0.65VVoltageDetector-0.9VEEPROM-1.1VRealTimeClock-0VLiBatteryChargeFunction3.Highaccuracy+/-0.5%Liprotection,VD4.SmallPackageSOT-23/SC-82ABSNTWLP/CSPLargeOutputCurrent:1ALDO3ADCDCHighInputVoltage:50VLDOPolicy6(LDO)SwitchingRegulatorLithium-ionProtectionICChargePumpMemoryAnalogueSensorEEPROMOpAmpComparatorTemperatureSensorHallSensorRealTimeClockLogicSingleGateLogicTimepieceProductLine-up7(3.6Vaverage)2-cellpack(7.2Vaverage)3-cellpack(10.8Vaverage)MobilephonePHSMDiPodVCRDVCDSCPDAPCPC4-cellpack(14.4Vaverage)S-8244SecondaryprotectionS-8264SecondaryprotectionS-8233S-8261S-8211S-8241S-8204S-8243S-8209CascadeCascade5-cellpack(18Vaverage)S-8215SecondaryprotectionS-82058(S-8261)EB+EBS-8261SeriesVSSDOVDDCOVMDPTesttimecanbereduced.Maximumabsoluterating=28VSOT-23-6PKGLessinfluenceagainstRFnoise.9(S-8242)EB+ＥＢ－S-8242SeriesVSSDOVDDCOVMVCBuild-indelaycircuit(Nocapacitor(Nocapacitorrequired)required)Lowcurrentconsumption5.0uAtypical.Useonly3resistorsand2capacitor10(S-8254)Highaccuracyovercurrentdetection3-cell/4-cellcanbeselectedRVC1RSELRVINIRVC4CTLRVMPRDOPEB-EB+8NC7VSS6CCT5CDT3DOP2VMP4VINI1COPCTL11VC412VDD16SEL10VC214VC115VC313NC9CVC4CVC3CVC2CVSSCVC1S-8254RSENSERVC3RVC2CCDTCCCTRCOPRVSSSELRCTL11・Overchargedetectionvoltage3.55Vto4.40V3.55Vto4.40V・IndependentIndependentchargeanddischargecontrolbythecontrolpinsorbyPTCPTC・Dischargeovercurrentdetectionin22--stepstepDischargeovercurrentdetectionDischargeovercurrentdetectionvoltage0.05Vto0.30VShortcircuitdetectionShortcircuitdetectionvoltage0.50Vto1.0V・chargeovercurrentchargeovercurrentprotectionfunction.・SettableSettabledelaytimeforOvercharge,Overdischarge,Dischargeovercurrent,Chargeovercurrent.・ChargeandDischargepatheasytoSeparateSeparatedd・ICPinDisconnectionDisconnectionDetectFunctionFeaturesofS-820512充電用FET放電用FETRVDD1:VMVC1:152:CO3:DO4:VINI5:CTLC6:CTLD7:CCT8:CDTVDD:16CIT:9VSS:10VC5:11VC4:12VC3:13VC2:14S-8205BRSENCEVCHACCITCCDTCCCTRCTLDV1V2V3V4RLRVC5RDO15.1kΩV5CVC5S-8205CircuitDiagram-1ICPinDisconnectionDetectFunction2-stepDischargeovercurrentdetectionChargeovercurrentprotectionPTCAvailableChargeandDischargeeasySeparatedSettabledelaytime13充電用FET放電用FETRVDDRVC51:VMVC1:152:CO3:DO4:VINI5:CTLC6:CTLD7:CCT8:CDTVDD:16CIT:9VSS:10VC5:11VC4:12VC3:13VC2:14S-8205ARSENCEVCHACCITCCDTCCCTRCTLDDIS-V1V2V3V4RLREB=10MΩRDO15.1kΩS-8205CircuitDiagram-214・Overchargedetectionvoltage3.60Vto4.70V3.60Vto4.70VAccuracy:±25mV(+25℃)・Delaytimesforoverchargedetectioncanbesetbyaninternalinternalcircuit・Outputformisselectable:CMOSCMOSoutput,NchNchopen-drainoutput,PchPchopen-drainoutput・Outputlogicisselectable:ActiveHH,ActiveLL・Lowcurrentconsumption1.6uA1.6uA(Typ)S-8215A4.2uA4.2uA(Typ)S-8215B・ICPinDisconnectionDisconnectionDetectFunctionS-8215BFeaturesofS-8215A/B15:VMVC1:152:CO3:DO4:VINI5:CTLC6:CTLD7:CCT8:CDTVDD:16CIT:9VSS:10VC5:11VC4:12VC3:13VC2:14S-8205BRSENSECCITCCDTCCCTRCTLDCVC15BAT2BAT1BAT3BAT4BAT5CVC21CVC22CVC23CVC24CVDD2RVC24RVC23RVC22RVC21RVDD2RVC25VC1:2VDD:18:COVSS:7VC5:6VC4:5VC3:4VC2:3S-8215BCVC25SCPROTECTORCFET1DFET1CFET2PConnectorS-8205+S8215CircuitDiagram-116:VMVC1:152:CO3:DO4:VI