RD07MVS1中文资料

MITSUBISHIRFPOWERMOSFETELECTROSTATICSENSITIVEDEVICERD07MVS1RoHSCompliance,SiliconMOSFETPowerTransistor,175MHz,520MHz,7WRD07MVS1MITSUBISHIELECTRIC10Jan2006OBSERVEHANDLINGPRECAUTIONSDESCRIPTIONOUTLINEDRAWING0.2+/-0.050.2+/-0.050.9+/-0.1INDEXMARK(Gate)6.0+/-0.154.9+/-0.15TerminalNo.1.Drain(output)2.Source(GND)3.Gate(input)Note():centervalueUNIT:mm4.6+/-0.053.3+/-0.050.8+/-0.051.0+/-0.05(0.25)2313.5+/-0.052.0+/-0.05(0.25)(0.22)(0.22)RD07MVS1isaMOSFETtypetransistorspecificallydesignedforVHF/UHFRFpoweramplifiersapplications.FEATURESHighpowergain:Pout7W,Gp10dB@Vdd=7.2V,f=520MHzHighEfficiency:60%typ.(175MHz)HighEfficiency:55%typ.(520MHz)APPLICATIONForoutputstageofhighpoweramplifiersinVHF/UHFbandmobileradiosets.RoHSCOMPLIANTRD07MVS1-101,T112isaRoHScompliantproducts.RoHScomplianceisindicatebytheletter“G”aftertheLotMarking.Thisproductincludetheleadinhighmeltingtemperaturetypesolders.However,itapplicabletothefollowingexceptionsofRoHSDirections.1.Leadinhighmeltingtemperaturetypesolders(i.e.tin-leadsolderalloyscontainingmorethan85%lead.)1/9MITSUBISHIRFPOWERMOSFETELECTROSTATICSENSITIVEDEVICERD07MVS1RoHSCompliance,SiliconMOSFETPowerTransistor,175MHz,520MHz,7WRD07MVS1MITSUBISHIELECTRIC10Jan2006OBSERVEHANDLINGPRECAUTIONSABSOLUTEMAXIMUMRATINGS(Tc=25°CUNLESSOTHERWISENOTED)SYMBOLPARAMETERCONDITIONSRATINGSUNITVDSSDraintosourcevoltageVgs=0V30VVGSSGatetosourcevoltageVds=0V+/-20VPchChanneldissipationTc=25°C50WPinInputPowerZg=Zl=50Ω1.5WIDDrainCurrent-3ATchJunctionTemperature-150°CTstgStoragetemperature--40to+125°CRthj-cThermalresistanceJunctiontocase2.5°C/WNote1:Aboveparametersareguaranteedindependently.ELECTRICALCHARACTERISTICS(Tc=25°C,UNLESSOTHERWISENOTED)LIMITSUNITSYMBOLPARAMETERCONDITIONSMINTYPMAX.IDSSZerogatevoltagedraincurrentVDS=17V,VGS=0V--200uAIGSSGatetosourceleakcurrentVGS=10V,VDS=0V--1uAVTHGatethresholdVoltageVDS=12V,IDS=1mA1.41.72.4VPout1Outputpowerf=175MHz,VDD=7.2V78-WηD1DrainefficiencyPin=0.3W,Idq=700mA5560-%Pout2Outputpowerf=520MHz,VDD=7.2V78-WηD2DrainefficiencyPin=0.7W,Idq=750mA5055-%LoadVSWRtoleranceVDD=9.2V,Po=7W(PinControl)f=175MHz,Idq=700mA,Zg=50ΩLoadVSWR=20:1(AllPhase)Nodestroy-LoadVSWRtoleranceVDD=9.2V,Po=7W(PinControl)f=520MHz,Idq=750mA,Zg=50ΩLoadVSWR=20:1(AllPhase)Nodestroy-Note:Aboveparameters,ratings,limitsandconditionsaresubjecttochange.2/9MITSUBISHIRFPOWERMOSFETELECTROSTATICSENSITIVEDEVICERD07MVS1RoHSCompliance,SiliconMOSFETPowerTransistor,175MHz,520MHz,7WRD07MVS1MITSUBISHIELECTRIC10Jan2006OBSERVEHANDLINGPRECAUTIONSTYPICALCHARACTERISTICSDRAINDISSIPATIONVS.AMBIENTTEMPERATURE010203040506004080120160200AMBIENTTEMPERATURETa(°C)CHANNELDISSIPATIONPch(W)OnPCB(*1)OnPCB(*1)withHeat-sink*1:ThematerialofthePCBGlassepoxy(t=0.6mm)VdsVS.CrssCHARACTERISTICS0246810121416182005101520Vds(V)Crss(pF)Ta=+25°Cf=1MHzVdsVS.CissCHARACTERISTICS02040608010012014016005101520Vds(V)Ciss(pF)Ta=+25°Cf=1MHzVdsVS.CossCHARACTERISTICS02040608010012005101520Vds(V)Coss(pF)Ta=+25°Cf=1MHzVds-IdsCHARACTERISTICS0123456789100246810Vds(V)Ids(A)Ta=+25°CVgs=5VVgs=4VVgs=3VVgs=3.5VVgs=4.5VVgs-IdsCHARACTERISTICS0.02.04.06.08.010.0012345Vgs(V)Ids(A),GM(S)Ta=+25°CVds=10VIdsGM3/9MITSUBISHIRFPOWERMOSFETELECTROSTATICSENSITIVEDEVICERD07MVS1RoHSCompliance,SiliconMOSFETPowerTransistor,175MHz,520MHz,7WRD07MVS1MITSUBISHIELECTRIC10Jan2006OBSERVEHANDLINGPRECAUTIONSTYPICALCHARACTERISTICSPin-PoCHARACTERISTICS@f=175MHz010203040-5051015202530Pin(dBm)Po(dBm),Gp(dB),Idd(A)020406080d(%)Ta=+25°Cf=175MHzVdd=7.2VIdq=700mAPoηGpPin-PoCHARACTERISTICS@f=175MHz0.02.04.06.08.010.012.005001000Pin(mW)Pout(W),Idd(A)20406080100d(%)PoηdIddTa=25°Cf=175MHzVdd=7.2VIdq=700mAVdd-PoCHARACTERISTICS@f=175MHz051015202530468101214Vdd(V)Po(W)0123456Idd(A)PoIddTa=25°Cf=175MHzPin=0.3WIcq=700mAZg=ZI=50ohmPin-PoCHARACTERISTICS@f=520MHz01020304005101520253035Pin(dBm)Po(dBm),Gp(dB),Idd(A)020406080d(%)Ta=+25°Cf=520MHzVdd=7.2VIdq=750mAPoηGpPin-PoCHARACTERISTICS@f=520MHz0.02.04.06.08.010.012.014.00.00.51.01.52.02.53.0Pin(W)Pout(W),Idd(A)30405060708090100d(%)PoηdIddTa=25°Cf=520MHzVdd=7.2VIdq=750mAVdd-PoCHARACTERISTICS@f=520MHz0510152025468101214Vdd(V)Po(W)012345Idd(A)PoIddTa=25°Cf=520MHzPin=0.7WIcq=750mAZg=ZI=50ohm4/9MITSUBISHIRFPOWERMOSFETELECTROSTATICSENSITIVEDEVICERD07MVS1RoHSCompliance,SiliconMOSFETPowerTransistor,175MHz,520MHz,7WRD07MVS1MITSUBISHIELECTRIC10Jan2006OBSERVEHANDLINGPRECAUTIONSTYPICALCHARACTERISTICSVgs-IdsCHARACTORISTICS20246810012345Vgs(V)Ids(A),GM(S)Vds=10VTc=-25~+75°C-25°C+75°C+25°C5/9MITSUBISHIRFPOWERMOSFETELECTROSTATICSENSITIVEDEVICERD07MVS1RoHSCompliance,SiliconMOSFETPowerTransistor,175MHz,520MHz,7WRD07MVS1MITSUBISHIELECTRIC10Jan2006OBSERVEHANDLINGPRECAUTIONSTESTCIRCUIT(f=175MHz)WWRD07MVS110mm3mm16pF140pF24.5mm19.5mm62pFRF-in62pFVddVgg19mm4.7kOHM100pF28.5mm6.5mm11.5mm1mm11.5mm10uF,50VC2C1LRF-out68OHM180pF19mm56pFW:linewidth=1.0mmL:Enameledwire7Turns,D:0.43mm,2.46mmO.DC1,C2:1000pF,0.022uFinparallelNote:Boardmaterial-TeflonsubstrateMicrostriplinewidth=2.2mm/50OHM,er:2.7,t=0.8mm175MHz5mm3.5mm5mm22pF22pFTESTCIRCUIT(f=520MHz)520MHzMicrostriplinewidth=2.2mm/50OHM,er:2.7,t=0.8mmNote:Board