CMOS射频器件建模及低噪声放大器的设计研究

整理文档很辛苦,赏杯茶钱您下走!

免费阅读已结束,点击下载阅读编辑剩下 ...

阅读已结束,您可以下载文档离线阅读编辑

资源描述

CMOS射频器件建模及低噪声放大器的设计研究作者:许永生学位授予单位:华东师范大学参考文献(151条)1.ZolfaghariA.RazaviBAlow-power2.4-GHztransmitter/receiverCMOSIC2003(02)2.ZargariM.TerrovitisM.JenSH-MAsingle-chipdual-bandtri-modeCMOStransceiverforIEEE802.11a/b/gwirelessLAN2004(12)3.AholaR.AktasA.WilsonJAsingle-chipCMOStransceiverfor802.11a/b/gwirelessLANs2004(12)4.PengfeiZhang.DerL.DaweiGuoAsingle-chipdual-banddirect-conversionIEEE802.11a/b/gWLANtransceiverin0.18-/splmu/mCMOS2005(09)5.HuangC-WP.VaillancourtW.ParolinALowpowerconsumption2.4GHzWLANfront-endmoduleforamultipleradiohandset20056.FloydBA.ReynoldsSK.ZwickT.KhuonWCDMAdirect-conversionreceiverfront-endcomparisoninRF-CMOSandSiGeBiCMOS[外文期刊]2005(04)7.CookBW.MolnarA.PisterKSJLowpowerRFdesignforsensornetworks20058.HorngYuanShih.Tz-HengFu.Yen-HorngChen.Jen-LungLiuPeng-UnSuHighly-IntegratedLow-PowerWCDMASiGeTransceiverforMobileTerminals20059.LongJRSiGeradiofrequencyICsforlow-powerportablecommunication[外文期刊]2005(09)10.AbidiAARFCMOScomeofage[外文期刊]2003(04)11.YueCP.WongSSScalabilityofRFCMOS200512.KwyroLee.NamI.IckjinKwon.Gil,JTheimpactofsemiconductortechnologyscalingonCMOSRFanddigitalcircuitsforwirelessapplication2005(07)13.查看详情14.查看详情15.查看详情16.MChan.KYHui.CHu.PKKoARobustandPhysicalBSIM3Non-Quasi-StaticTransientandACSmall-SignalModelforCircuitSimulation[外文期刊]1998(04)17.XiaodongJin.JJOu.CHCAneffectivegateresistancemodel.forCMOSRFandnoisemodeling199818.YCheng.CHChen.MMatloubian.MJDeenHighFrequencySmallSignalACandNoiseModelingofMOSFETsforRFICDesign2002(03)19.ScholtenAJ.TiemeijerLF.vanLangeveIdeRNoisemodelingforRFCMOScircuitsimulation[外文期刊]2003(03)20.YuCao.RobertAGroves.XuejueHuangFrequency-IndependentEquivalent-CircuitModelforOn-ChipSpiralInductors2003(03)21.HyungcheolShin.JoonhoGilAsimplewide-bandOn-chipinductormodelforsilicon-basedRFICs2003(09)22.BRazavi.RFMicroelectronicsUpperSaddleRiver199823.陈邦媛射频通信电路200324.ThomasHLeeTheDesignofCMOSRadioFrequencyIntegratedCircuits199825.TrondYtterdal.YuhuaCheng.TorAFjeldlyDeviceModelingforAnalogandRFCMOSCircuitDesign200326.CEnz.YChengMOStransistormodelingforRFICdesign200027.CEnzAnMOSTransistorModelforRFICDesignValidinAllRegionsofOperation[外文期刊]2002(01)28.AvanderZielThermalnoiseinfield-effecttransistors196229.AvanderZielGateNoiseinField-EffectTransistorsatModeratelyHighFrequencies196330.RobertMFoxCommentsonCircuitModelsforMOSFETThermalNoise[外文期刊]1993(02)31.BWang.JRHellums.CGSodiniMOSFETthermalnoisemodelingforanalogintegratedcircuits199432.DPTriantis.ANBirbas.DKondisThermalnoisemodelingforshort-channnelMOSFETs1996(11)33.PKleinAnanalyticalthermalnoisemodelofdeepsubmicronMOSFETs199834.YPTsividisOperationandModelingoftheMOSTransistor199935.AJScholtenAccuratethermalnoisemodelfordeep-submicronCMOS199936.CHPark.YJParkModelingofthermalnoiseinshort-channelMOSFETsatsaturation200037.GKnoblinger.PKlein.HTieboutAnewmodelforthermalchannelnoiseofdeep-submicronMOSFETsanditsapplicationinRF-CMOSdesign200138.CHChen.MJDeenChannelnoisemodelingofdeepsubmicronMOSFETs[外文期刊]200239.AJScholtenNoisemodelingforRFCMOScircuitsimulation[外文期刊]200340.KHan.HShin.KLeeAnalyticalDrainThermalNoiseCurrentModelValidforDeepSubmicronMOSFETs[外文期刊]200441.SAsgaran.MJDeen.CHChenAnalyticalModelingofMOSFET'sChannelNoiseandNoiseParameters2004(12)42.BSIM3v3.3Manual200543.AvanderZielSolidStatePhysicalElectronics197644.JAGeurstCalculationofhigh-frequencycharacteristicsoffield-effecttransistors196545.CHChen.FLi.YChengMOSFETDrainandInduced-gateNoiseModelingandExperimentalVerificationforRFICDesign200446.CHChen.MJDeen.YCheng.MMatloubianExtractionoftheInducedGateNoise,ChannelThermalNoiseandtheirCorrelationinSub-MicronMOSFETsfromRFNoiseMeasurements2001(12)47.SHara.TTokumitsu.TTanaka.MAikawaBroadbandmonolithicmicrowaveactiveinductoranditsapplicationtominiaturizedwide-bandamplifiers198848.SLucyszyn.IDRobertsonMonolithicnarrow¨Cbandfilterusingultrahigh-Qtunableactiveinductors199449.SElKhouryThedesignofactivefloatingpositiveandnegativeinductorsinMMICtechnology[外文期刊]199550.CYong-Ho.HSong-Cheol.KYoung-SeAnovelactiveinductoranditsapplicationtoinductancecontrolledoscillator199751.H-YLeeWidebandcharacterizationofatypicalbondingwireformicrowaveandmillimeter-waveintegratedcircuits[外文期刊]1995(01)52.Young-GooLee.Sang-KiYun.Hai-YoungLeeNovelhigh-QbondwireinductorforMMIC199853.SunderarajanSMohanThedesign,modelingandoptimizationofon-chipinductorandtransformercircuits199954.HMGreenhouseDesignofPlanarRectangularMicroelectronicInductors1974(02)55.查看详情56.查看详情57.查看详情58.查看详情59.LudwigR射频电路设计--理论与应用200260.AMNiknejad.RGMeyerAnalysis,design,andoptimizationofspiralinductorsandtransformersforSiRFICs199861.AliMNiknejad.RobertGMeyerAnalysisofEddy-CurrentLossesOverConductiveSubstrateswithApplicationstoMonolithicInductorsandTransformers[外文期刊]2001(01)62.AliMNiknejadAnalysis,Simulation,andApplicationsofPassiveDevicesonConductiveSubstrates200063.CPYue.SSWongPhysicalModelingofSpiralInductorsonSilicon2000(03)64.CPatrickYue.SSimonWongOn-ChipSpiralInductorswithPatternedGroundShieldsforSi-BasedRFIC′s1998(05)65.DanielMelendy.PascaleFrancis.ChristophPichlerANewWide-BandCom

1 / 198
下载文档,编辑使用

©2015-2020 m.777doc.com 三七文档.

备案号:鲁ICP备2024069028号-1 客服联系 QQ:2149211541

×
保存成功