0402电阻DATAsheet

DATASHEETGENERALPURPOSECHIPRESISTORSRC0402(PbFree)5%,1%Productspecification–Sep03,2004V.2SupersedesDateofMar.06,2003(PbFree)YYAAGGEEOOOORRDDEERRIINNGGCCOODDEECTCCODERC0402XXXXXXXXXL(1)(2)(3)(4)(5)(6)(1)TOLERANCEF=±1%J=±5%(2)PACKAGINGTYPER=Paper/PEtapingreel(3)TEMPERATURECOEFFICIENTOFRESISTANCE–=Baseonspec(4)TAPINGREEL07=7inchdia.Reel10=10inchdia.Reel(notpreferred)13=13inchdia.Reel(5)RESISTANCEVALUE5R6,56R,560R,56K,10M.(6)RESISTORTERMINATIONSL=Leadfreeterminations(pureTin)ORDERINGEXAMPLETheorderingcodeofaRC0402chipresistor,value56Xwith±1%tolerance,suppliedin7-inchtapereelis:RC0402FR-0756RL.NOTE1.The“L”attheendofthecodeisonlyforordering.Onthereellabel,thestandardCTCwillbementionedanadditionalstamp“LFP”=leadfreeproduction.2.Productswithleadinterminationsfulfilthesamerequirementsasmentionedinthisdatasheet.3.Productswithleadinterminationswillbephasedoutinthecomingmonths(beforeJuly1st,2006)SCOPEThisspecificationdescribesRC0402serieschipresistorswithlead-freeterminationsmadebythickfilmprocess.ORDERINGINFORMATIONPartnumberisidentifiedbytheseries,size,tolerance,packingtype,temperaturecoefficient,tapingreelandresistancevalue.(PbFree)Finally,thetwoexternalterminations(pureTin)areadded.Seefig.2.CONSTRUCTIONTheresistorsareconstructedoutofahigh-gradeceramicbody.Internalmetalelectrodesareaddedateachendandconnectedbyaresistivepaste.Thecompositionofthepasteisadjustedtogivetheapproximaterequiredresistanceandlasercuttingofthisresistivelayerthatachievestolerancetrimsthevalue.Theresistivelayeriscoveredwithaprotectivecoat.MARKINGRC0402NomarkingFig.1ynsc007DIMENSIONSTYPERC0402L(mm)1.00±0.05W(mm)0.50±0.05H(mm)0.35±0.05I1(mm)0.20±0.10I2(mm)0.25±0.10handbook,4columnsprotectivecoatresistorlayerinnerelectrodeendterminationceramicsubstrateMBE940_aHI2Fig.2ChipresistorconstructionTable1MBE940_aprotectivecoatWLI1Fig.3ChipresistordimensionFordimensionseeTable1(PbFree)ELECTRICALCHARACTERISTICSCHARACTERISTICSRC04021/16WOperatingTemperatureRange–55°Cto+155°CMaximumWorkingVoltage50VMaximumOverloadVoltage100VDielectricWithstandingVoltage100V5%(E24)1Ωto10MΩ1%(E96)1Ωto10MΩResistanceRangeZeroOhmJumper0.05Ω10ΩR≤10MΩ±100ppm/°CTemperatureCoefficient1ΩR≤10Ω±200ppm/°CRatedCurrent1.0AJumperCriteriaMaximumCurrent2.0AFOOTPRINTANDSOLDERINGPROFILESForrecommendedfootprintandsolderingprofiles,pleaseseethespecialdatasheet“Chipresistorsmounting”.ENVIRONMENTALDATAFormaterialdeclarationinformation(IMDS-data)oftheproducts,pleaseseetheseparatedinfo“Environmentaldata”.Table2PACKINGSTYLEANDPACKAGINGQUANTITYPRODUCTTYPEPACKINGSTYLEREELDIMENSIONQUANTITYPERREELRC0402Paper/PETapingReel(R)7(178mm)10,000units10(254mm)/notpreferred20,000units13(330mm)50,000unitsNOTE1.ForPaper/PEtapeandreelspecification/dimensions,pleaseseethespecialdatasheet“Packing”document.Table3Packingstyleandpackagingquantity(PbFree)MRA63270100−5550Tamb(°C)(%Prated)0050100155PmaxFig.4Maximumdissipation(Pmax)inpercentageofratedpowerasafunctionoftheoperatingambienttemperature(Tamb)FUNCTIONALDESCRIPTIONPPOOWWEERRRRAATTIINNGGRC0402ratedpowerat70°Cis1/16WRATEDVOLTAGETheDCorAC(rms)continuousworkingvoltagecorrespondingtotheratedpowerisdeterminedbythefollowingformula:V=√(PXR)WhereV=ContinuousratedDCorAC(rms)workingvoltage(V)P=Ratedpower(W)R=Resistancevalue(X)110102103104105106CCB508110102103Rn(Ω)1.2/50µs10/700µsVmax(V)^Fig.5Maximumpermissiblepeakpulsevoltagewithoutfailingtoopencircuit’inaccordancewithDINIEC60040(CO)533fortype:RC0402PPUULLSSEELLOOAADDIINNGGCCAAPPAABBIILLIITTIIEESS(PbFree)CCB50910−610−510−410−310−210−11ti(s)Pmax(V)^10−1110102103singlepulseFig.6Pulseonaregularbasisfortype:RC0402;maximumpermissiblepeakpulsepowerasafunctionofpulsedurationforsinglepulseandrepetitivepulsetp/ti=100020050010010−610−510−410−310−210−11CCB507150ti(s)Vmax(V)^Fig.7Pulseonaregularbasisfortype:RC0402;maximumpermissiblepeakpulsevoltageasafunctionofpulseduration(PbFree)TESTSANDREQUIREMENTSTESTTESTMETHODPROCEDUREREQUIREMENTSAt+25/–55°Cand+25/+125°CTemperatureCoefficientofResistance(T.C.R.)MIL-STD-202F-method304;JISC5202-4.8Formula:T.C.R=-------------------------×106(ppm/°C)Wheret1=+25°Corspecifiedroomtemperaturet2=–55°Cor+125°CtesttemperatureR1=resistanceatreferencetemperatureinohmsR2=resistanceattesttemperatureinohmsRefertotable2ThermalShockMIL-STD-202F-method107G;IEC60115-14.19At–65(+0/–10)°Cfor2minutesandat+155(+10/–0)°Cfor2minutes;25cycles±(0.5%+0.05Ω)for1%tol.±(1.0%+0.05Ω)for5%tol.LowTemperatureOperationMIL-R-55342D-Para4.7.4At–65(+0/–5)°Cfor1hour;RCWVappliedfor45(+5/–0)minutes±(0.5%+0.05Ω)for1%tol.±(1.0%+0.05Ω)for5%tol.No