TEL TRAINING

TELDRMTrainingDRM:DipoleRotationMagnetic.Onetypeofchamber.靠著120G的永久磁鐵的磁場,使帶電粒子和磁場產生交互作用力而改變運動方向,從而增加粒子的碰撞頻率,以達到增加Plasma的Density為目的.ReduceWaferArcingPotentialC.Y.Item1998|1999|2000|2001|2002Q2|Q3|Q4|Q1|Q2|Q3|Q4|Q1|Q2|Q3|Q4|Q1|Q2|Q3|Q4|Q1|Q2|Q3|Q4PilotLineProduction0.18um0.15um0.13umDRMContactVIASpacer,LDDPlanarMaskOpenSAC/LID.DamasceneContactVIASpacer,LDDPlanarMaskOpenSAC/LID.DamasceneLow-kHARContactHARViaMulti-LevelContactVIASpacer,LDDPlanarMaskOpenSAC/LID.DamasceneLow-kHARContactHARViaMulti-LevelSuperCCPModule(SCCM)CriticalApplicationNon-CriticalApplicationTELEtchTechnologyRoadMap(ForOxide&Low-kapplications)DRMIIe&MeHardwareIntroduction•４：Ｐｏｌｙ•５：Ｏｘｉｄｅ•６：Ａｌ•８，９：ＳｉFilmApplication•P：PE(PlasmaEtching)•I：IEM(IonEnergyModulation)•S：SCCM(SuperCapacitiveplasmaCoupledModule)•D：DRM例：Unitｙ８55DDPlatformWaferSizeFilmApplicationChamberSystemChamberSystemConceptsaboutTELetchmachine:Platform•UnityIIe•UnityMe•UnityM•TeliusPlatformUnityⅡe855DDUnityMe85555DDDDⅡeMeChamberUNITYMeUNITYⅡeTMPSEIKO800LTMPEBARA600LPendulumValveVATPressureController+VATThrottleValveENIMatcherSizeofbox:SmallerPneumaticGapDriveMotorDriveLengthofBellowsandBellowsCoverShorterthanUNITYⅡeChamberPartssameMagnet&DriveUnitHeB.P.ControllerUNITYⅡe:MFC,Manometer,PCVUNITYMe:PCV(Fujikin)50%reductioninGapDrivecomponentsComparisonofUnityIIe/MeConfigurationsB-FieldModuleB-FieldModuleB-FieldModuleDRMChamber1.HardwareFocusringInsulatorringA7InsulatorbottomBaffleplateBellowscoverDeposhieldringShieldringProcessKitsinChamberUnscrewthescrewoftheupperelectrodesymmetricallyRemovetheupperelectrodewithjigChecktheprocesskitsifanythingabnormallyRemovethefocusringslightlyRemovetheinsulatorringA7slightlyRemovetheinsulatorringB3slightlyRemovetheringshieldMovetheplug(Teflon)awaywithnipperUnscrewthescrewindepo-shieldandremoveitRemovethebaffleplateRemovethebellowscoverMoveawaythedirtywithvacuumhostCleantheEs-chuckedgewithscrapeCleantheEs-chuckedgewithceramicpen•ProcesssequenceBackSideHeOn/OffSequenceESC/GAS/He/RFRF/He&ESC/GasDRMProcessIntroductionC4F8→C2F4,CF3,CF2,CF,↓C2F4→CF2*,CF*↓CF→C*,Ｆ*・C2F4andCF2：ItisusefulradicaltogethighselectivitytoSiandPR.・CF3：ItgethigherE/R,butlowPRandSiselectivitybecauseofFrichradical.・CFandC：ItislikelytoetchstopdepositionbecauseofCrichRadical&IonC4F8DissociationSiO2EtchingModelIfC4F8willbeplasmatic,itwillbedissociatedeachradicalandion.SiO2EtchingModel(C/Fratio)1/4SiO2+CF1/4SiF4+1/2CO+1/2C---(1):Cdeposition---etchstop1/2SiO2+CF21/2SiF4+CO---(2):Goodetchmode3/4SiO2+CF33/4SiF4+CO+2O---(3):Ogeneration---lowsel.toPRHigherC/FratioCsurplusPolymerEtchStopLowerC/FratioOsurplusPRetchrateupHigherH/FratioPolymerAnisotropyHighSelectivityLowerH/FratioFsurplusetchrateupLowSelectivityHigherO/FratioLessPolymerIsotropyLowSelectivityLowerO/FratioPolymerAnisotropyHighSelectivityCFSiO2EtchandSelectivityLowSelectivitytoResist&EtchStopSiO2+4CF-SiF4+2CO+2CSi3N4+12CF-3SiF4+2NF3+12CCF2SiO2EtchandSelectivityCF3SiO2EtchandSelectivityHighSelectivity&GoodProfileSiO2+2CF2-SiF4+2COSi3N4+12CF2-3SiF4+4NF3+12CLowSelectivity&Bowing3SiO2+4CF3-3SiF4+4O2+4COSi3N4+8CF3+4O2-3SiF4+4NF3+8COConventionalM-RIEStandardRecipeMeritHighSeltoSi&PRDemeritTaperProfileP.R.SiO2SiCFxPolymerCOF2HFManyPolymerDepositiononsidewall.→TaperProfileCHF3/COProcess(CHF3/CO=30/170sccm,etc)DRMProcesstypecomparisonSiO2SiCF2OP.R.CF2BowingSiCOOP.R.CStandardContact&ViaRecipeMeritHighseltoSi&PRVerticalProfileDemeritTradeoffbetweenBowingprofile&EtchStopSmallHoleorHARPolymercontrolbyOxygenCF2isproducedbyCOHighSeltoSi&PRForetchthroughinhole,HighO2isnecessary.Oxygengointohole.BowingProfileC4F8/CO/Ar/O2Process(C4F8/CO/Ar/O2=10/50/200/5sccm,etc)DRMProcesstypecomparisonC4F8/CO/Ar(HighTotalFlow)Process(C4F8/CO/Ar=16/300/400sccm,etc)StandardSACRecipeMeritHighseltoSiN&PRDemeritTradeoffbetweenSeltoSiN&EtchStopSiO2SiP.R.SiNCF2CF2CF2isproducedbyCOHighSeltoSi&PRC4F8/Ar/CH2F2Process(C4F8/Ar/CH2F2=7/500/4sccm,etc)StandardSACRecipeMeritVeryHighseltoSiN&PRDemeritTaperProfileToomuchpolymerCF2isproducedbyCOHighSeltoSi&PRSiO2SiP.R.SiNCF2DRMProcesstypecomparisonC5F8/Ar/O2Process(C5F8/Ar/O2=10/500/10sccm,etc)Contact&SACrecipeMeritHighseltoSi,SiN&PRVerticalProfileDemeritTradeoffbetweenBowingprofile&EtchStopSiO2SiP.R.SiNCF2CF2SiO2SiP.R.CF2OCF2OCrichcomplicatedpolymerPolymercontrolbyOxygenCrichcompositepolymerthatiscomplicated&hardcomparetoC4F8recipe.HighSeltoSi,PR,SiN.DRMProcesstypecomparisonNewGasforDRMprocessIncreasingC/FratioPressuredependenceIfdecreasingPressure?1.SmallerresidencetimeLessDissociationLesspolymer(andLessetchant)2.SmallerisotopicetchingEx)Recommendrange:**30mT~150mT**dependonTotalflowOxE/RUnifromityPRselSiNselProfileEtchstopmarginStriationBtmCDPressure↓---straightorbowingBetter---Larger##mT,1700W,C4F8/CO/Ar/O2=10/50/200/350mT40mTSlightlyEtchstopNoEtchstopMorestraightProfileLargerBtmCDPowerdependenceOxE/RUnifromityPRselSiNselProfileEtchstopmarginStriationBtmCDPower↑---straightorbowingBetterMuchworseLargerIfincreasingPower?1.MoreDissociationMoreEtchant(andPolymer)2.Largeranisotropicetching[Largeionenergy]3.H