ITO薄膜的厚度对其光电性能的影响

371Vol.37No.120082JOURNALOFSYNTHETICCRYSTALSFebruary,2008ITO,,,,,(;;,300071):(indium2tinoxide,ITO),,ITO,,ITO,,6.3710-4cm,1.911020cm-366.4cm2v-1s-1ITOnip,10.13mA/cm2,0.79V,0.648,5.193%:ITO;;;:O484:A:10002985X(2008)0120147204ThicknessDependenceofIn2O3:SnFilmPropertiesDepositedbyReactiveEvaporationLILin2na,XUEJun2ming,ZHAOYa2zhou,LIYang2xian,GENGXin2hua,ZHAOYing(InstituteofPhoto2electronicThinFilmDevicesandTechniqueofNankaiUniversity;KeyLaboratoryofPhotoelectronicsThinFilmDevicesandTechniqueofTianjin;KeyLaboratoryofOptoelectronicInformationScienceandTechnology,MinistryofEducation,Tianjin300071,China)(Received20November2006,accepted16April2007)Abstract:TheindiumtinoxidefilmswithdifferentthicknesshavebeenpreparedonglasssubstratesbyreactiveevaporationofIn2Snalloywithanoxygenpressureof1.410-1Paandsubstratetemperatureat160.Inthisresearch,thedepositionrateis0.1nm/s.ThebestITOfilmsweobtainedhaveelectricalresistivityof6.3710-4cm,carrierconcentrationof1.911020cm-3andHallmobilityof66.4cm2v-1s-1.Theinfluenceofthicknessonstructural,opticalandelectricalpropertiesoftheobtainedfilmshasbeeninvestigated.A2SisolarcellswithITOfilmsasfrontcontactwereprepared.Afteroptimization,acellwithopen2circuitvoltageof0.79V,short2circuitcurrentdensityof10.13mA/cm2,fillfactorof0.648,andefficiencyof5.193%wasachieved.Keywords:ITOfilm;reactiveevaporation;carrierconcentration;Hallmobility:2006211220;:2007204216:(06YFGZGX02100);(043604911);973(2006CB2026022006CB202603):(19802),,,E2mail:[e-mail]:,E2mail:[e-mail]148371ITO(SnO2In2O3)[1,2],,[3]ITOnip,,;ITOAgAlpinITO,,,ITO2ZZSX2700D,ITO2h,,160,1.010-3Pa,,D0727A/ZM,99.999%9:1,MDC2360C,0.010.06nm/sGTP2S,,DMAX2500/PCXXRD33.11Fig.1TheopticaltransmittancevswavelengthofITOfilmsonglasswithdifferentthickness1,ITO,,8090nm400800nm,3001100nm,,k1[4],ITO,,,,100nm,,96nm111nm370nm,,ITO370nm,3.30eV,ITOITO,,,,370nm,1:ITO1493.22ITOITORd,=Rd,=1/nqn[5],,,,,,;,,,,,2ITOFig.2Theresistivity,carrierconcentrationnandHallmobilityasafunctionofthickness3ITOXFig.3X2raydiffractionspectraofITOfilmsdepositedonglasssubstratewithdifferentthickness3.3X3ITOX,ITOXIn2O3,,In2O3,In3+Sn4+(40nm),X(211);,(211),(222),,(400)(413)(440)[6](222)(2),ScherrerL=K/cos,,K=0.92dsin=,a0[7]4(222)4(222)Fig.4TheFWHMof(222)orientationasafunctionofthickness,,(222),;,,,,,,,,,,,[8],,15037(211),(222)5nipFig.5Current2voltagecharacteristicsofnipstructuredsolarcells3.4nipITOnip,5,ITOnip,10.13mA/cm2,0.79V,0.648,5.193%4,ITO,,6.3710-4cm,ITO,,,;nip,5.193%[1]MaYong,KongChun2yang.ElectricalandOpticalPropertiesandApplicationsofIn2O3:Sn(ITO)Films[J].JournalofChongqingUniversity,2002,25(8):1142117.[2]Hambergi,GranqvistCG.EvaporatedSn2dopedIn2O3Films:BasicOpticalPropertiesandApplicationstoEnergy2efficientWindows[J].J.ApplPhys.,1986,60(11):1232159.[3]MengZhiguo,PengHuajun,WuChunya,etal.RoomTemperatureDepositionofThin2filmIndium2tinOxideonMicro2fabricatedColorFiltersandItsApplicationtoFlat2panelDisplays[J].JournalofOptoelectronicsLaser,2005,16(2):1402145.[4].[M].,1999:12277.[5]MaJin,LiShu2Ying,ZhaoJun2qing.PreparationandPropertiesofIndiumTinOxideFilmsDepositedonPolyesterSubstratesbyReactiveEvaporation[J].ThinSolidFilms,1997,307:2002202.[6]ZhuFeng,ZhaoYing,ZhangXiaodan,etal.P2nc2Si:HFilmMaterialsandItsApplicationinMicrocrystallineSiliconSolarCells[J].JournalofOptoelectronicsLaser,2004,15(4):3812384.[7]ZengMinggang,ChenSongyan,ChenMouzhi,etal.TheEffectsoftheMicro2structureontheOpticalandElectricalQualityofIndiumTinOxideThinFilms[J].JournalofXiamenUniversity(NaturalScience),2004,43(4):4972499.[8].[M].:,2005:26246.