MB-TCAD(学习sentaurus-tcad时可以观摩)

MathieuBenoit,PH-LCD,CERN1TCADSimulationofSiliconradiationdetectorsusingcommercialsimulationproductsVertex2013,LakeStarnberg,September182013OutlineShortsummaryoftheoryofFinite-Element/DifferenceMethod(FEM)inSiliconTCADsimulationNumericalmethodsExistenceofthesolutionWorkFlowComparisonofmaincommercialTCADsimulationsoftwarePhysicsFunctionality(userfriendliness)ExampleofTCADsimulationSpace-ChargeSignInversion(SCSI)DoublepeakininvertedsensorsChargemultiplicationP-SprayInsulationMagneticFieldeffectsCharge-SharinginpixelsensorsConclusion2WarningthistalkmightcontainsbavariansphericalcowsVertex2013,LakeStarnberg,September182013TCADsimulationprinciples3DiscretizationoftheDomainAproximationofthesolutionspaceusingtestfunctionApproximatedsolutiontotheequationtosolveVertex2013,LakeStarnberg,September182013TCADsimulationprinciples:Beyondthestandardmodel!ItispossibleforthemainTCADsimulationtoperformsimulationathigherordersofBoltzmannTransportEquation:Thethermodynamicmodel▪Continuityequationonly▪TransportTimeEnergyRelaxationtimeThehydrodynamicmodel▪Energybalancetakenintoaccount▪ModelizeCarrierHeating,Velocityovershoot4Vertex2013,LakeStarnberg,September182013TCADsimulationprinciplesTheexactsolutiontotheequationneedstobedefinableas:ncanbeinfinite(ornot,ex:simplediodeetc)InFEM,nisfixedbythenumberofdegreesofFreedom(nDOF)nDOFisfixedbythemeshdefinedinyourgeometry5Vertex2013,LakeStarnberg,September182013TCADsimulationworkflow6«Old-school»processsimulation•Hard-codedpixelgeometrywhendefiningprocessingsteps•PossibilityforlimitedparametrizationProcessFlowsimulation•WorkwithGDSIIfilesprovidedbyyourfavoritevendor•AbstractdescriptionoftheprocessSimpledescriptionofthegeometryanddopingusinganeditor•Definegeometry(Shape,material)•Definedopingprofile(parametricdescription)DeviceSimulationConditioning•ReduceComplexity(symmetry,deadarearemoval)•RemeshforDevicesimulation(reduceoxide/nitridemesh,increasebulk)DeviceSimulation•ElectricField,RamoPotential•Capacitance•TransientBehavior•Thermal/MechanicalStressSimulationPost-Processing•ExtractProfiles(E(x,y,z),etc)•ExtractValues(Breakdown,DepletionPotential)Vertex2013,LakeStarnberg,September182013ProcessFlowSimulation7Timepix3x3PixelMasksetgeneratedusingpyGDSStructureGeneratedusingprocessFlow•ProcessFlowsimulationallowsformoreautomatedstudiesofdifferentgeometries•Generatemaskusingyourfavoritesoftware(pyGDS,Cadence,etc)•UseGDSIImasktodefinegeometry•Useabstractandparametricdescriptionoftheprocess•Implantation,lithography,deposits,annealingetc…•TakesAdvantageofmultiplicationofavailableCPU/RAMintheHEPCommunity•Choseasetofgeometrical/Process/Electricalparametertoscan•LaunchsimulationinparallelusingLSFInfrastructureVertex2013,LakeStarnberg,September182013ProcessFlowSimulation8Vertex2013,LakeStarnberg,September182013Importanceofmeshingproperly9•MeshinginthefirstmainproblemyouwillencounterwhendoingTCADsimulation•Determinationoftheperfectmeshisnotanexactscience(alotoftrialanderror!)•Upperlimitofmeshsizesetbydevicefeaturesize(implants,electrodes)•Lowerlimitofmeshsizesetbycomputationallimits(RAM,computingtime)•Meshingalgorithmavailableinsoftwarepackagesalsohaveinternallimitation(!!!)Vertex2013,LakeStarnberg,September182013Physics(DeviceSimulation)PhysicsModelsMobilityConcentration-dependentmobility(fittoexperimentaldata),Parallelfielddependentmobility(fittoexperimentalsaturationvelocities)GenerationrecombinationandtrappingModifiedconcentrationdependentShockley-Read-HallGeneration/recombination(fortreatmentofdefects)ImpactionizationSelberherr’sImpactionizationmodelTunnelingBand-to-bandtunnelling,Trap-AssistedtunnelingOxidephysicsFowler-Nordheimtunnelling,interfacechargeaccumulation10Vertex2013,LakeStarnberg,September182013Generation/RecombinationModifiedShockley-Read-HallG/RAsumofSRHcontributionbyeachtrapΓisthedegeneracyofthetrap,nitheintrinsicconcentrationofcarriers11)()()()(2,kTEfEiipikTEiEfiniiiipnennenpnpnRRRVertex2013,LakeStarnberg,September182013Generation/RecombinationTransientbehaviouroftrapsσn,pistrapcapturecross-sectionvn,pisthermalvelocityniisintrinsicconcentrationFtA,TDtheprobabilityofionizationNtA,TDspacechargedensity12))1(())1(())1(())1((kTEEitAtAppkTEEitAtAnnttAkTEEitDtDnnkTEEitDtDppttDtiitittienFpFvenFFnvdtdNenFnFvenFFpvdtdNpptrappnntrapn11ElectroncaptureElectronemmisionHolecaptureHoleemmisionholecaptureholeemmisionelectroncaptureelectronemmisionVertex2013,LakeStarnberg,September182013Radiationdamage13Non-ionizingEnergylossIonizingEnergylossD.Menichelli,M.Bruzzi,Z.Li,andV.Eremin,“Modellingofobserveddouble-junctioneffect,”Nucl.Instrum.Meth.A,vol.426,pp.135–139,Apr.1999.F.Moscatellietal.,“Anenhancedapproachtonumericalmodelingofheavilyirradiatedsilicondevices,”Nucl.Instrum.Meth.B,vol.186,no.1-4,pp.171–175,Jan.2002.F.Moscatellietal.,“Comprehensivedevicesimulationmodelingofheavilyirradiatedsilicondetectorsatcryogenictemperatures,”IEEETrans.Nucl.Sci.,vol.51,no.4,pp.1759–1765,Aug.2004.M.Petasecca,F.Moscatelli,D.P