MLCC 贴片电容介绍

Multi-layerCeramicCapacitor(MLCC)[e-mail].(P/N)晶片電容微粒電容貼片電容ThedifferentnamesforMLCCMulti-layerCeramicCapacitorChipcapacitor多層陶瓷電容積層陶瓷電容ConstructionofMLCCTerminationelectrodeCeramicdielectricC=k:DielectricconstantA:AreaofoverlappingelectrodesN:Numberofdielectriclayerst:Thicknessofdielectricf:Conversionfactor2.WhatisaCapacitor?k*A*(N)f*tTheprincipleofcapacitancedesigningCapacitance=ee0Ax(Ne-1)De0=8.841910-12F/mA=Area,(LeffxWeff)Ne=NumberofelectrodeD=Distanceofelectrodee=PermittivityofceramicUnit:F(farad,fromFaraday)DifferentdesignpatternsofMLCCFixedpatternVariablepatternFloatingpattern(1)(2)(3)(4)(5)(6)(1):Standard(2):Forinnerstressreduction(3):Forhighvoltagecapabilityincreasing(4),(5),(6):ForcapacitancetuningMLCCmaterialandconstructionProcessNMEBMEInnerelectrodePd,PdAgNi,CuMetallicterminationAgCuTheclassificationofceramicmaterialX7R,X5R,Y5V,Z5U1TemperatureCompensationNP0(C0G),N750(U2J)2HighDielectricConstantClassTCfeatureLinerfunctionofcap.withtemp.Non-linerfunctionofcap.withtemp.TypicalproductSymbolsoftemperaturecoefficients(EIA)forClassIC0GSignificantfigureoftemp.coeff.ofcap.(ppm/C)C=0B=0.3L=0.8A=0.9M=1.0P=1.5R=2.2S=3.3T=4.7V=5.6U=7.5Multiplierappliedtosignificantfigure0=-11=-102=-1003=-10004=-100005=+16=+107=+1008=+10009=+10000Toleranceoftemp.coeff.(ppm)G=±30H=±60J=±120K=±250L=±500M=±1000N=±2500Ex.:C0G=NP0,.TC.=0(-1)30ppmC:0N:Negative0:-1P:PositiveG:30ppm0:0Significantfigureoftemp.coeff.ofCap.(ppm/°C)SymbolMultiplierappliedtosignificantfigureSymbolToleranceoftemp.coeff.(ppm)Symbol00.30.80.91.01.52.23.34.77.5CBHAMPRSTU-1-10-100-1000-100001101001000100000123456789±30±60±120±250±500±1000±2500GHJKLMNClass1:Ex.:C0G=NP0,T.C.=0(-1)30ppmC:0N:Negative0:-1P:PositiveG:30ppm0:0SymbolsofTemperatureCoefficientsClass2:Ex.:X7RX5R,or(B)Y5V,or(F)Z5UX:-55CX:-55C,(-25C)Y:-30C,(-25C)Z:+10C7:+125C5:+85C,(+85C)5:+85C,(+85C)5:+85CR:15%R:15%,(10%)V:+22to-82%,(+30to-80%)U:+22to-56%LowTemp.SymbolHighTemp.SymbolMax.Cap.changeovertemp.range(%)Symbol+10-30-55ZYX+45+65+85+105+125+150+2002456789±1.0±1.5±2.2±3.3±4.7±7.5±10±15±22+22to-33+22to-56+22to-82ABCDEFPRSTUVSymbolsofTemperatureCoefficientsTemperaturecoefficientofclassIMLCCSymbolsoftemperaturecharacteristics(EIA)forClassIIX7RLowtemp.(C)Z=+10Y=-30X=-55Hightemp.(C)2=+454=+655=+856=+1057=+1258=+1509=+200Max.cap.changeovertemp.range(%)A=±1.0B=±1.5C=±2.2D=±3.3E=±4.7F=±7.5P=±10R=±15S=±22T=+22to-33U=+22to-56V=+22to-82Ex.:X7RX5R,or(B)Y5V,or(F)Z5UX:-55CX:-55C,(-25C)Y:-30C,(-25C)Z:+10C7:+125C5:+85C,(+85C)5:+85C,(+85C)5:+85CR:15%R:15%,(10%)V:+22to-82%,(+30to-80%)U:+22to-56%Temperaturecoefficient/characteristicofMLCCTemperatureCharacteristicsSymbolAmbientTempLowTempHighTempTemp.CoefficientorTemp.ChangeCG20℃-25℃+85℃0+/-30ppm/℃CH20℃-25℃+85℃0+/-60ppm/℃CJ20℃-25℃+85℃0+/-120ppm/℃CK20℃-25℃+85℃0+/-250ppm/℃NPO(Walsin)25℃-55℃+125℃0+/-30ppm/℃PH(N150)20℃-25℃+85℃-150+/-60ppm/℃RH(N220)20℃-25℃+85℃-220+/-60ppm/℃SH(N330)20℃-25℃+85℃-330+/-60ppm/℃TH(N470)20℃-25℃+85℃-470+/-60ppm/℃UJ(N750)20℃-25℃+85℃-750+/-120ppm/℃SL20℃-25℃+85℃-1000~+350ppm/℃B(J)20℃-25℃+85℃+/-10%B(D)20℃-55℃+85℃+/-15%B(B,orR)20℃-55℃+125℃+/-15%X7R(Walsin)25℃-55℃+125℃+/-15%X5R25℃-55℃+85℃+/-15%X6S25℃-55℃+105℃+/-22%X8R25℃-55℃+150℃+/-15%X9R25℃-55℃+200℃+/-15%F20℃-25℃+85℃+30/-80%Y5V25℃-25℃+85℃+22/-82%Y5V(Walsin)20℃-25℃+85℃+30/-80%Z5U25℃-25℃+85℃+22/-56%MLCCprocessflow3.WalsinMLCCIntroductionWTCPartNo.0805B104K500NT(1)(2)(3)(4)(5)(6)(7)•(1)SizeCode•(2)Dielectric•(3)Capacitance•(4)Tolerance•(5)Voltage•(6)Termination•(7)PackagingWalsinMLCCIntroduction(1)SizeCode•L*W(ininches):0805=0.08inch*0.05inch=(0.08*25.4mm)*(0.05*25.4mm)=2.0mm*1.2mm=2012•inchesmm•02010603•04021005•06031608•08052012•12063216•12103225•18084520•18124532WLWalsinMLCCIntroduction(2)Dielectric•CLASSSymbolEIACodekvalueCLASSINCOG(NPO)k150BX7R,X5R150k4000EZ5Uk4000CLASSIIFY5Vk4000WalsinMLCCIntroduction(3)Capacitance-1•Twosignificantdigitsfollowedbyno.ofzeros:473=47*103pF=47nF=0.047uF•Forvaluesbelow10pf,use“R”inplaceofdecimalpoint:•4R7=4.7pF•C=Q/V=Coulomb/Voltage=FARAD•Q(electriccharge)=C(capacitancevalue)*V(appliedvoltage)•I=dQ/dt=C*dV/dt•(ThevalueofCapacitanceisdefinedasoneFARADwhentheVoltageacrossthecapacitorisoneVolt.,andachargingcurrentofoneAmpereflowsforonesecond.)•pico-farad(pf)=10-12farad•nano-farad(nf)=10-9farad•micro-farad(uf)=10-6faradWalsinMLCCIntroduction(3)Capacitance-2•SeriesCapacitanceStepE31.02.24.7E61.01.52.23.34.76.8E121.01.21.51.82.22.73.33.94.75.66.88.21.01.21.51.82.22.73.33.94.75.66.88.2E241.11.31.62.02.43.03.64.35.16.27.59.1Ex.(1).100nF/Z-80nF~180nF,220nF/Z-176nF~396nF,470nF/Z-376nF~846nF(2).100nF/M-80nF~120nF,220nF/M-176nF~264nF,470nF/M-376nF~564nF(3).1nF/M-0.8nF~1.2nF,1.5nF/M-1.2nF~1.8nF,2.2nF/M-1.76nF~2.64nF(4).1nF/K-0.9nF~1.1nF,1.2nF/K-1.08nF~1.32nF,1.5nF/K-1.35nF~1.65nF(5).10pF/K-9pF~11pF,12pF/K-10.8pF~13.2pF,15pF/K-13.5pF~16.5pF(6).10pF/J-9.5pF~10.5pf,11pF/J-10.45pF~11.55pF,12pF/