C2M0025120D(400元)

1C2M0025120D-C2M0025120DMOSFETZ-FETTMMOSFETN••RDS(on)•••RoHS•••••••DC/DC•TO-247-3C2M0025120DTO-247-3VDS1200VID@25˚C90ARDS(on)25mΩTC=25˚CIDS(DC)90AVGS=20VTC=25°C1960VGS=20VTC=100°CIDS(pulse)250AtPTjmaxTC=25°C22VGS-10/+25VPtot463WTC=25°CTJ=150°C20TJ,Tstg-55+150˚CTL260˚C1.6mm(0.063)10Md18.8Nmlbf-inM36-322C2M0025120D-TC=25˚CV(BR)DSS1200VVGS=0VID=50AVGS(th)2.12.4VVDS=10VID=10mA111.61.8VVDS=10VID=10mATJ=150°CIDSS2100AVDS=1200VVGS=0VIGSS600nAVGS=20VVDS=0VRDS(on)2534mΩVGS=20VID=50A4564363VGS=20VID=50ATJ=150°Cgfs23.6SVDS=20VIDS=50A721.7VDS=20VIDS=50ATJ=150°CCiss2788pFVGS=0VVDS=1000Vf=1MHzVAC=25mV1718Coss220Crss15EossCoss121J16td(on)14.4nsVDD=800VVGS=-5/20VID=50ARG(ext)=2.5RL=16VDSIEC60747-8-48327tr31.6td(off)28.8tf28.4EON1.4mJVDS=800VVGS=-5/20VID=50ARG(ext)=2.5ΩL=412H25EOFF0.3RG1.1f=1MHzVAC=25mVCISSESRSiCVSD3.3VVGS=-5VISD=25ATJ=25°C13.0VVGS=-5VISD=25ATJ=150°Ctrr45nsVGS=-5VI=50ATJ=25°CVR=800Vdif/dt=1000A/µs1Qrr406nCIrrm13.5A(1)SiCVGS=-5VRθJC0.240.27°C/W21RθJC40Qgs46nCVDS=800VVGS=-5/20VID=50AIEC60747-8-48312Qgd50Qg1613C2M0025120D-0.00.20.40.60.81.01.21.41.61.8-50-250255075100125150OnResistance,RDSOn(P.U.)JunctionTemperature,TJ(°C)Conditions:IDS=50AVGS=20Vtp200µs03060901201500.02.55.07.510.0Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(V)Conditions:TJ=150°Ctp200µsVGS=20VVGS=10VVGS=18VVGS=16VVGS=14VVGS=12V03060901201500.02.55.07.510.0Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(V)Conditions:TJ=-55°Ctp200µsVGS=20VVGS=10VVGS=18VVGS=16VVGS=14VVGS=12V03060901201500.02.55.07.510.0Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(V)Conditions:TJ=25°Ctp200µsVGS=20VVGS=10VVGS=18VVGS=16VVGS=14VVGS=12V2.(TJ=25ºC)1.(TJ=-55°C)010203040506070800306090120150OnResistance,RDSOn(mOhms)Drain-SourceCurrent,IDS(A)Conditions:VGS=20Vtp200µsTJ=150°CTJ=-55°CTJ=25°C0102030405060-50-250255075100125150OnResistance,RDSOn(mOhms)JunctionTemperature,TJ(°C)Conditions:IDS=50Atp200µsVGS=20VVGS=18VVGS=16VVGS=14V3.(TJ=150ºC)4.6.5.IDS(A)IDS(A)RDSOn(mOhms)RDSOn(P.U.)RDSOn(mOhms)IDS(A)VDS(V)VDS(V)IDS(A)TJ(°C)TJ(°C)VDS(V)4C2M0025120D-02040608010002468101214Drain-SourceCurrent,IDS(A)Gate-SourceVoltage,VGS(V)Conditions:VDS=20Vtp200µsTJ=150°CTJ=-55°CTJ=25°C-100-80-60-40-200-5-4-3-2-10Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(A)VGS=0VVGS=-2VVGS=-5VCondition:TJ=-55°Ctp200µs-100-80-60-40-200-5-4-3-2-10Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(A)VGS=0VVGS=-2VVGS=-5VCondition:TJ=25°Ctp200µs-100-80-60-40-200-5-4-3-2-10Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(A)VGS=0VVGS=-2VVGS=-5VCondition:TJ=150°Ctp200µs0.00.51.01.52.02.53.03.5-50-250255075100125150ThresholdVoltage,Vth(V)JunctionTemperatureTJ(°C)ConditionsVDS=10VIDS=0.5mAConditionsVDS=10VIDS=10mATypMin-50510152025020406080100120140160180Gate-SourceVoltage,VGS(V)GateCharge,QG(nC)Conditions:IDS=50AIGS=100mAVDS=800VTJ=25°C7.8.TJ=-55ºC9.TJ=25ºC10.TJ=150ºC11.12.25ºCIDS(A)IDS(A)Vth(V)IDS(A)IDS(A)VGS(V)VGS(V)VDS(A)TJ(°C)VDS(A)VDS(A)QG(nC)5C2M0025120D-110100100010000050100150200Capacitance(pF)Drain-SourceVoltage,VDS(V)CissCossConditions:TJ=25°CVAC=25mVf=1MHzCrss-100-80-60-40-200-5-4-3-2-10Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(V)Conditions:TJ=-55°Ctp200µsVGS=0VVGS=5VVGS=10VVGS=15VVGS=20V-100-80-60-40-200-5-4-3-2-10Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(V)Conditions:TJ=25°Ctp200µsVGS=0VVGS=5VVGS=10VVGS=15VVGS=20V-100-80-60-40-200-5-4-3-2-10Drain-SourceCurrent,IDS(A)Drain-SourceVoltage,VDS(V)Conditions:TJ=150°Ctp200µsVGS=0VVGS=5VVGS=10VVGS=15VVGS=20V0306090120150020040060080010001200StoredEnergy,EOSS(µJ)DraintoSourceVoltage,VDS(V)11010010001000002004006008001000Capacitance(pF)Drain-SourceVoltage,VDS(V)CissCossConditions:TJ=25°CVAC=25mVf=1MHzCrss13.TJ=-55ºC14.TJ=25ºC15.TJ=150ºC16.17.(0-200V)18.(0-1000V)IDS(A)IDS(A)(pF)IDS(A)EOSS(J)(pF)VDS(V)VDS(V)VDS(V)VDS(V)VDS(V)VDS(V)6C2M0025120D-00.511.522.533.54010203040506070SwitchingEnergy(mJ)DraintoSourceCurrent,IDS(A)Conditions:TJ=25°CVDD=800VRG(ext)=6.8ΩVGS=-5/+20VFWD=C4D20120AL=412μHEOffEOnETotal0102030405060708090100-55-54595145Drain-SourceContinousCurrent,IDS(DC)(A)CaseTemperature,TC(°C)Conditions:TJ≤150°C050100150200250300350400450500-55-54595145MaximumDissipatedPower,Ptot(W)CaseTemperature,TC(°C)Conditions:TJ≤150°C100E-61E-310E-3100E-31E-610E-6100E-61E-310E-3100E-31JunctionToCaseImpedance,ZthJC(oC/W)Time,tp(s)0.50.30.10.050.020.01SinglePulse0.010.101.0010.00100.000.11101001000Drain-SourceVoltage,VDS(V)100µs1ms10µsConditions:TC=25°CD=0,Parameter:tp100ms受限于RDSOn00.511.522.5010203040506070SwitchingLoss(µJ)DraintoSourceCurrent,IDS(A)EOffEOnETotalConditions:TJ=25°CVDD=600VRG(ext)=6.8ΩVGS=-5/+20VFWD=C4D20120AL=412μH20.19.IDS21.22.23.(VDD=800V)24.(VDD=600V)tpIDS(DC)(A)ZthJC(oC/W)(mJ)(mJ)Ptot(W)IDS(A)TC(°C)tp(s)IDS(A)IDS(A)TC(°C)VDS(V)7C2M0025120D-00.511.522.533.544.55051015202530SwitchingLoss(mJ)ExternalGateResistorRG(ext)(Ohms)EOffEOnETotalConditions:TJ=25°CVDD=800VIDS=50AVGS=-5/+20VFWD=C4D20120AL=412μH00.511.522.533.54-50-250255075100125150SwithcingLoss(mJ)JunctionTemperature,TJ(°C)Conditions:IDS=50AVDD=800VRG(ext)=6