SI4401DDY-T1-GE3;中文规格书,Datasheet资料

VishaySiliconixSi4401DDYDocumentNumber:66801S10-1471-Rev.A,05-Jul-10(D-S)MOSFETFEATURES•Halogen-freeAccordingtoIEC61249-2-21Definition�TrenchFET®PowerMOSFET�100%RgTested�100%UISTested�ComplianttoRoHSDirective2002/95/ECAPPLICATIONS�LoadSwitch�POLNotes:a.BasedonTC=25°C.b.Surfacemountedon1x1FR4board.c.t=10s.d.Maximumundersteadystateconditionsis85°C/W.PRODUCTSUMMARYVDS(V)RDS(on)()ID(A)aQg(Typ.)-400.015atVGS=-10V-16.133nC0.022atVGS=-4.5V-13.3OrderingInformation:Si4401DDY-T1-GE3(Lead(Pb)-freeandHalogen-free)SO-8SDSDSDGD5678TopView2341SGDP-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-40VGate-SourceVoltageVGS±20ContinuousDrainCurrent(TJ=150°C)TC=25°CID-16.1ATC=70°C-12.9TA=25°C-10.2b,cTA=70°C-8.2b,cPulsedDrainCurrentIDM-50ContinousSource-DrainDiodeCurrentTC=25°CIS-5.3TA=25°C-2.1b,cSinglePulseAvalancheCurrentL=0.1mHIAS-28SinglePulseAvalancheEnergyEAS39mJMaximumPowerDissipationTC=25°CPD6.3WTC=70°C4TA=25°C2.5b,cTA=70°C1.6b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,dt10sRthJA3750°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF1620:66801S10-1471-Rev.A,05-Jul-10VishaySiliconixSi4401DDYNotes:a.Pulsetest;pulsewidth300µs,dutycycle2%.b.Guaranteedbydesign,notsubjecttoproductiontesting.Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedintheoperationalsectionsofthespecificationsisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectdevicereliability.SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=-250µA-40VVDSTemperatureCoefficientVDS/TJID=-250µA-36mV/°CVGS(th)TemperatureCoefficientVGS(th)/TJ5Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1.2-2.5VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAZeroGateVoltageDrainCurrentIDSSVDS=-40V,VGS=0V-1µAVDS=-40V,VGS=0V,TJ=55°C-5On-StateDrainCurrentaID(on)VDS-5V,VGS=-10V-25ADrain-SourceOn-StateResistanceaRDS(on)VGS-10V,ID=-10.2A0.0120.015VGS-4.5V,ID=-8.4A0.0180.022ForwardTransconductanceagfsVDS=-15V,ID=-10.2A37SDynamicbInputCapacitanceCissVDS=-20V,VGS=0V,f=1MHz3007pFOutputCapacitanceCoss335ReverseTransferCapacitanceCrss291TotalGateChargeQgVDS=-20V,VGS=-10V,ID=-10.2A6495nCVDS=-20V,VGS=-4.5V,ID=-10.2A3350Gate-SourceChargeQgs9.8Gate-DrainChargeQgd15.7GateResistanceRgf=1MHz0.424Turn-OnDelayTimetd(on)VDD=-20V,RL=2.4ID-8.2A,VGEN=-4.5V,Rg=15786nsRiseTimetr5075Turn-OffDelayTimetd(off)4060FallTimetf1726Turn-OnDelayTimetd(on)VDD=-20V,RL=2.4ID-8.2A,VGEN=-10V,Rg=11320RiseTimetr1120Turn-OffDelayTimetd(off)4568FallTimetf918Drain-SourceBodyDiodeCharacteristicsContinuousSource-DrainDiodeCurrentISTC=25°C-5.3APulseDiodeForwardCurrentISM-50BodyDiodeVoltageVSDIS=-8.2A,VGS0V-0.8-1.2VBodyDiodeReverseRecoveryTimetrrIF=-8.2A,dI/dt=100A/µs,TJ=25°C3654nsBodyDiodeReverseRecoveryChargeQrr4162nCReverseRecoveryFallTimeta20nsReverseRecoveryRiseTimetb16:66801S10-1471-Rev.A,05-Jul-10°C,unlessotherwisenotedOutputCharacteristicsOn-Resistancevs.DrainCurrentGateCharge010203040500.00.51.01.52.0VGS=10Vthru5VVGS=4VVGS=3VVDS-Drain-to-SourceVoltage(V)ID-DrainCurrent(A)00.0060.0120.0180.0240.03001020304050VGS=10VVGS=4.5VRDS(on)-On-Resistance(Ω)ID-DrainCurrent(A)024681001428425670ID=10.2AVDS=20VVDS=10VVDS=32VQg-TotalGateCharge(nC)VGS-Gate-to-SourceVoltage(V)TransferCharacteristicsCapacitanceOn-Resistancevs.JunctionTemperature024681001234TC=-55°CTC=125°CTC=25°CVGS-Gate-to-SourceVoltage(V)ID-DrainCurrent(A)Crss090018002700360045000816243240CissCossVDS-Drain-to-SourceVoltage(V)C-Capacitance(pF)0.60.81.01.21.41.61.8-50-250255075100125150VGS=10.2V;ID=10.2AVGS=4.5V;ID=8.4ATJ-JunctionTemperature(°C)(Normalized)RDS(on)-On-Resistance:66801S10-1471-Rev.A,05-Jul-10VishaySiliconixSi4401DDYTYPICALCHARACTERISTICS25°C,unlessotherwisenotedSource-DrainDiodeForwardVoltageThresholdVoltage0.111010000.51.01.5TJ=25°CTJ=150°CVSD-Source-to-DrainVoltage(V)IS-SourceCurrent(A)1.31.61.92.22.5-50-250255075100125150ID=250μAVGS(th)(V)TJ-Temperature(°C)On-Resistancevs.Gate-to-SourceVoltageSinglePulsePower(Junction-to-Ambient)00.010.020.030.040.05246810ID=10.2ATJ=25°CTJ=125°CRDS(on)-On-Resistance(Ω)VGS-Gate-to-SourceVoltage(V)02080Power(W)Time(s)4060110001010-110-2100SafeOperatingArea,Junction-to-Ambient10010.11101000.01100.1TA=25°CSinglePulse1s10sLimitedbyRDS(on)*BVDSSLimited1ms100μs10msDC100msVDS-Drain-to-SourceVoltage(V)*VGSminimumVGSatwhichRDS(on)isspecifiedID-DrainCurrent(A):66801S10-1471-Rev.A,05-Jul-10°C,unlessother