场效应管2SK3878

2SK38782013-11-011TOSHIBAFieldEffectTransistorSiliconN-ChannelMOSType(π-MOSIV)2SK3878SwitchingRegulatorApplications•Lowdrain-sourceON-resistance:RDS(ON)=1.0Ω(typ.)•Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.)•Lowleakagecurrent:IDSS=100μA(max)(VDS=720V)•Enhancementmodel:Vth=2.0to4.0V(VDS=10V,ID=1mA)AbsoluteMaximumRatings(Ta=25°C)CharacteristicSymbolRatingUnitDrain-sourcevoltageVDSS900VDrain-gatevoltage(RGS=20kΩ)VDGR900VGate-sourcevoltageVGSS±30VDC(Note1)ID9DraincurrentPulse(Note1)IDP27ADrainpowerdissipation(Tc=25°C)PD150WSinglepulseavalancheenergy(Note2)EAS778mJAvalanchecurrentIAR9ARepetitiveavalancheenergy(Note3)EAR15mJChanneltemperatureTch150°CStoragetemperaturerangeTstg−55to150°CNote:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(“HandlingPrecautions”/“DeratingConceptandMethods”)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).ThermalCharacteristicsCharacteristicSymbolMaxUnitThermalresistance,channeltocaseRth(ch-c)0.833°C/WThermalresistance,channeltoambientRth(ch-a)50°C/WNote1:Ensurethatthechanneltemperaturedoesnotexceed150°Cduringuseofthedevice.Note2:VDD=90V,Tch=25°C,L=17.6mH,RG=25Ω,IAR=9ANote3:Repetitiverating:pulsewidthlimitedbymaxjunctiontemperatureThistransistorisanelectrostatic-sensitivedevice.Handlewithcare.Unit:mm1.GATE2.DRAIN(HEATSINK)3.SOURCEJEDEC―JEITASC-65TOSHIBA2−16C1BWeight:4.6g(typ.)132Startofcommercialproduction2008-102SK38782013-11-012ElectricalCharacteristics(Ta=25°C)CharacteristicSymbolTestConditionMinTyp.MaxUnitGateleakagecurrentIGSSVGS=±30V,VDS=0V⎯⎯±10μAGate-sourcebreakdownvoltageV(BR)GSSIG=±10μA,VDS=0V±30⎯⎯VDraincutoffcurrentIDSSVDS=720V,VGS=0V⎯⎯100μADrain-sourcebreakdownvoltageV(BR)DSSID=10mA,VGS=0V900⎯⎯VGatethresholdvoltageVthVDS=10V,ID=1mA2.0⎯4.0VDrain-sourceONresistanceRDS(ON)VGS=10V,ID=4A⎯1.01.3ΩForwardtransferadmittance⎪Yfs⎪VDS=15V,ID=4A3.57.0⎯SInputcapacitanceCiss⎯2200⎯ReversetransfercapacitanceCrss⎯45⎯OutputcapacitanceCossVDS=25V,VGS=0V,f=1MHz⎯190⎯pFRisetimetr⎯25⎯Turn-ontimeton⎯65⎯Falltimetf⎯20⎯SwitchingtimeTurn-offtimetoff⎯120⎯nsTotalgatecharge(gate-sourceplusgate-drain)Qg⎯60⎯Gate-sourcechargeQgs⎯34⎯Gate-drain(“Miller”)chargeQgdVDD≈400V,VGS=10V,ID=9A⎯26⎯nCSource-DrainRatingsandCharacteristics(Ta=25°C)CharacteristicSymbolTestConditionMinTyp.MaxUnitContinuousdrainreversecurrent(Note1)IDR⎯⎯⎯9APulsedrainreversecurrent(Note1)IDRP⎯⎯⎯27AForwardvoltage(diode)VDSFIDR=9A,VGS=0V⎯⎯−1.7VReverserecoverytimetrr⎯1.4⎯μsReverserecoverychargeQrrIDR=9A,VGS=0V,dIDR/dt=100A/μs⎯16⎯μCMarkingDuty≤1%,tw=10μs0V10VVGSRL=100ΩVDD≈400VID=4AVOUT4.7ΩK3878TOSHIBALotNo.Note4PartNo.(orabbreviationcode)Note4:AlineunderaLotNo.identifiestheindicationofproductLabels.Notunderlined:[[Pb]]/INCLUDESMCVUnderlined:[[G]]/RoHSCOMPATIBLEor[[G]]/RoHS[[Pb]]PleasecontactyourTOSHIBAsalesrepresentativefordetailsastoenvironmentalmatterssuchastheRoHScompatibilityofProduct.TheRoHSistheDirective2011/65/EUoftheEuropeanParliamentandoftheCouncilof8June2011ontherestrictionoftheuseofcertainhazardoussubstancesinelectricalandelectronicequipment.2SK38782013-11-013FORWARDTRANSFERADMITTANCE⎪Yfs⎪(S)DRAIN−SOURCEVOLTAGEVDS(V)ID–VDSDRAINCURRENTID(A)DRAIN−SOURCEVOLTAGEVDS(V)ID–VDSDRAINCURRENTID(A)GATE−SOURCEVOLTAGEVGS(V)ID–VGSDRAINCURRENTID(A)DRAINCURRENTID(A)⎪Yfs⎪−IDDRAINCURRENTID(A)RDS(ON)−IDDRAIN−SOURCEON-RESISTANCERDS(ON)(Ω)01026482010468COMMONSOURCETc=25°CPULSETESTVGS=4.5V55.254.751101100.1COMMONSOURCETc=25°CPULSETESTVGS=10V100020412816402081216COMMONSOURCEVDS=20VPULSETEST0204128162010468Tc=−55°C25100250.110010Tc=−55°C10011001065.51015101565.55VGS=4.5V1COMMONSOURCETc=25°CPULSETESTCOMMONSOURCEVDS=20VPULSETESTDRAIN−SOURCEVOLTAGEVDS(V)GATE−SOURCEVOLTAGEVGS(V)VDS–VGS0204128160420812162.3COMMONSOURCETc=25°CPULSETEST4.5ID=9A2SK38782013-11-014CASETEMPERATURETc(°C)GATETHRESHOLDVOLTAGEVth(V)DRAIN−SOURCEVOLTAGEVDS(V)IDR−VDSDRAINREVERSECURRENTIDR(A)DRAIN−SOURCEVOLTAGEVDS(V)C−VDSCAPACITANCEC(pF)Vth−Tc0.1100−0.40−1.6−0.8−1.2101031VGS=0VCOMMONSOURCETc=25°CPULSETEST513240−8004080120160−40COMMONSOURCEVDS=10VID=1mAPULSETEST100001010.1100101511000100GATE−SOURCEVOLTAGEVGS(V)DYNAMICINPUT/OUTPUTCHARACTERISTICSTOTALGATECHARGEQg(nC)DRAIN−SOURCEVOLTAGEVDS(V)5001003004000020412160VDD=400V100VGSVDSCOMMONSOURCEID=9ATc=25°CPULSETEST406080100202002008CissCossCrssCOMMONSOURCEVGS=0Vf=1MHzTc=25°CDRAINPOWERDISSIPATIONPD(W)CASETEMPERATURETc(°C)PD−Tc2004012080160008012020040160CASETEMPERATURETc(°C)RDS(ON)−TcDRAIN−SOURCEON-RESISTANCERDS(ON)(Ω)051324−40−8016004080COMMONSOURCEVGS=10VPULSETEST2.34.5120ID=9A2SK38782013-11-01510μ100μ1m10m100m1100.0010.010.1110TPDMtDuty=t/TRth(ch-c)=0.833°C/WSINGLEPULSEDuty=0.50.20.10.050.020.01rth−twPULSEWIDTHtw(s)NORMALIZEDTRANSIENTTHERMALIMPEDANCErth(t)/Rth(ch-c)−15V15VTESTCIR