Electronic-Devices-and-Circuit-Theory--Nashelsky

SIGNIFICANTEQUATIONS1SemiconductorDiodesW=QV,1eV=1.6*10-19J,ID=Is(eVDnVT-1),VT=kTq,TK=TC+273,k=1.38*10-23J/K,VK0.7V(Si),VK0.3V(Ge),VK1.2V(GaAs),RD=VDID,rd=26mVID,rav=VdIdpt.topt.,PD=VDID,TC=(VZVZ)(T1-T0)*100%C2DiodeApplicationsSilicon:VK0.7V,germanium:VK0.3V,GaAs:VK1.2V;half-wave:Vdc=0.318Vm;full-wave:Vdc=0.636Vm3BipolarJunctionTransistorsIE=IC+IB,IC=ICmajority+ICOminority,ICIE,VBE=0.7V,adc=ICIE,IC=aIE+ICBO,aac=ICIE,ICEO=ICBO(1-a),bdc=ICIB,bac=ICIB,a=b(b+1),b=a(1-a),IC=bIB,IE=(b+1)IB,PCmax=VCEIC4DCBiasing—BJTsIngeneral:VBE=0.7V,ICIE,IC=bIB;fixed-bias:IB=(VCC-VBE)RB,VCE=VCC-ICRC,ICsat=VCCRC;emitter-stabilized:IB=(VCC-VBE)(RB+(b+1)RE),Ri=(b+1)RE,VCE=VCC-IC(RC+RE),ICsat=VCC(RC+RE);voltage-divider:exact:RTh=R1R2,ETh=R2VCC(R1+R2),IB=(ETh-VBE)(RTh+(b+1)RE),VCE=VCC-IC(RC+RE),approximate:bREÚ10R2,VB=R2VCC(R1+R2),VE=VB-VBE,ICIE=VERE;voltage-feedback:IB=(VCC-VBE)(RB+b(RC+RE));common-base:IB=(VEE-VBE)RE;switchingtransistors:ton=tr+td,toff=ts+tf;stability:S(ICO)=ICICO;fixed-bias:S(ICO)=b+1;emitter-bias:S(ICO)=(b+1)(1+RBRE)(1+b+RBRE);voltage-divider:S(ICO)=(b+1)(1+RThRE)(1+b+RThRE);feedback-bias:S(ICO)=(b+1)(1+RBRC)(1+b+RBRC),S(VBE)=ICVBE;fixed-bias:S(VBE)=-bRB;emitter-bias:S(VBE)=-b(RB+(b+1)RE);voltage-divider:S(VBE)=-b(RTh+(b+1)RE);feedbackbias:S(VBE)=-b(RB+(b+1)RC),S(b)=ICb;fixed-bias:S(b)=IC1b1;emitter-bias:S(b)=IC1(1+RBRE)(b1(1+b2+RBRE));voltage-divider:S(b)=IC1(1+RThRE)(b1(1+b2+RThRE));feedback-bias:S(b)=IC1(1+RBRC)(b1(1+b2+RBRC)),IC=S(ICO)ICO+S(VBE)VBE+S(b)b5BJTACAnalysisre=26mVIE;CEfixed-bias:Zibre,ZoRC,Av=-RCre;voltage-dividerbias:Zi=R1R2bre,ZoRC,Av=-RCre;CEemitter-bias:ZiRBbRE,ZoRC,Av-RCRE;emitter-follower:ZiRBbRE,Zore,Av1;common-base:ZiREre,ZoRC,AvRCre;collectorfeedback:Zire(1b+RCRF),ZoRCRF,Av=-RCre;collectordcfeedback:ZiRF1bre,ZoRCRF2,Av=-(RF2RC)re;effectofloadimpedance:Av=RLAvNL(RL+Ro),Ai=-AvZiRL;effectofsourceimpedance:Vi=RiVs(Ri+Rs),Avs=RiAvNL(Ri+Rs),Is=Vs(Rs+Ri);combinedeffectofloadandsourceimpedance:Av=RLAvNL(RL+Ro),Avs=(Ri(Ri+Rs))(RL(RL+Ro))AvNL,Ai=-AvRiRL,Ais=-Avs(Rs+Ri)RL;cascodeconnection:Av=Av1Av2;Darlingtonconnection:bD=b1b2;emitter-followerconfiguration:IB=(VCC-VBE)(RB+bDRE),ICIEbDIB,Zi=RBb1b2RE,Ai=bDRB(RB+bDRE),Av1,Zo=re1b2+re2;basicamplifierconfiguration:Zi=R1R2Zi,Zi=b1(re1+b2re2),Ai=bD(R1R2)(R1R2+Zi),Av=bDRCZi,Zo=RCro2;feedbackpair:IB1=(VCC-VBE1)(RB+b1b2RC),Zi=RBZi,Zi=b1re1+b1b2RC,Ai=-b1b2RB(RB+b1b2RC)Av=b2RC(re+b2RC)1,Zore1b2.6Field-EffectTransistorsIG=0A,ID=IDSS(1-VGSVP)2,ID=IS,VGS=VP(1-2IDIDSS),ID=IDSS4(ifVGS=VP2),ID=IDSS2(ifVGS0.3VP),PD=VDSID,rd=ro(1-VGSVP)2;MOSFET:ID=k(VGS-VT)2,k=ID(on)(VGS(on)-VT)27FETBiasingFixed-bias:VGS=-VGG,VDS=VDD-IDRD;self-bias:VGS=-IDRS,VDS=VDD-ID(RS+RD),VS=IDRS;voltage-divider:VG=R2VDD(R1+R2),VGS=VG-IDRS,VDS=VDD-ID(RD+RS);common-gateconfiguration:VGS=VSS-IDRS,VDS=VDD+VSS-ID(RD+RS);specialcase:VGSQ=0V:IIQ=IDSS,VDS=VDD-IDRD,VD=VDS,VS=0V.enhancement-typeMOSFET:ID=k(VGS-VGS(Th))2,k=ID(on)(VGS(on)-VGS(Th))2;feedbackbias:VDS=VGS,VGS=VDD-IDRD;voltage-divider:VG=R2VDD(R1+R2),VGS=VG-IDRS;universalcurve:m=0VP0IDSSRS,M=m*VG0VP0,VG=R2VDD(R1+R2)8FETAmplifiersgm=yfs=IDVGS,gm0=2IDSSVP,gm=gm0(1-VGSVP),gm=gm01IDIDSS,rd=1yos=VDSID0VGS=constant;fixed-bias:Zi=RG,ZoRD,Av=-gmRD;self-bias(bypassedRs):Zi=RG,ZoRD,Av=-gmRD;self-bias(unbypassedRs):Zi=RG,Zo=RD,Av-gmRD(1+gmRs);voltage-dividerbias:Zi=R1R2,Zo=RD,Av=-gmRD;sourcefollower:Zi=RG,Zo=RS1gm,AvgmRS(1+gmRS);common-gate:Zi=RS1gm,ZoRD,Av=gmRD;enhancement-typeMOSFETs:gm=2k(VGSQ-VGS(Th));drain-feedbackconfiguration:ZiRF(1+gmRD),ZoRD,Av-gmRD;voltage-dividerbias:Zi=R1R2,ZoRD,Av-gmRD.9BJTandJFETFrequencyResponselogea=2.3log10a,log101=0,log10ab=log10a-log10b,log101b=-log10b,log10ab=log10a+log10b,GdB=10log10P2P1,GdBm=10log10P21mW600,GdB=20log10V2V1,GdBT=GdB1+GdB2+g+GdBnPoHPF=0.5Pomid,BW=f1-f2;lowfrequency(BJT):fLS=12p(Rs+Ri)Cs,fLC=12p(Ro+RL)CC,fLE=12pReCE,Re=RE(Rsb+re),Rs=RsR1R2,FET:fLG=12p(Rsig+Ri)CG,fLC=12p(Ro+RL)CC,fLS=12pReqCS,Req=RS1gm(rd);Millereffect:CMi=(1-Av)Cf,CMo=(1-1Av)Cf;highfrequency(BJT):fHi=12pRThiCi,RThi=RsR1R2Ri,Ci=Cwi+Cbe+(1-Av)Cbc,fHo=12pRThoCo,RTho=RCRLro,Co=CWo+Cce+CMo,fb12pbmidre(Cbe+Cbc),fT=bmidfb;FET:fHi=12pRThiCi,RThi=RsigRG,Ci=CWi+Cgs+CMi,CMi=(1-Av)CgdfHo=12pRThoCo,RTho=RDRLrd,Co=CWo+Cds+CMo;CMO=(1-1Av)Cgd;multistage:f1=f1221n-1,f2=(221n-1)f2;square-wavetesting:fHi=0.35tr,%tilt=P%=((V-V)V)*100%,fLo=(Pp)fs10OperationalAmplifiersCMRR=AdAc;CMRR(log)=20log10(AdAc);constant-gainmultiplier:VoV1=-RfR1;noninvertingamplifier:VoV1=1+RfR1;unityfollower:Vo=V1;summingamplifier:Vo=-[(RfR1)V1+(RfR2)V2+(RfR3)V3];integrator:vo(t)=-(1R1C1)1v1dt11Op-AmpApplicationsConstant-gainmultiplier:A=-RfR1;noninverting:A=1+RfR1:voltagesumming:Vo=-[(RfR1)V1+(RfR2)V2+(RfR3)V3];high-passactivefilter:foL=12pR1C1;low-passactivefilter:foH=12pR1C112PowerAmplifiersPowerin:Pi=VCCICQpowerout:Po=VC