第四章场效应晶体管

sd5656552
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2020-03-15

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200492014.14.2MOS200492024BJT(iB~iC)FieldEffectTransistorFET(uGS~iD)FETNPNPNPFET200492034.1JFET■■■■JFET20049204JFETNPP➜N20049205N¾1VGS)0V-VGS=VP0+PN2VDS20049206PJFETVDSVGSVPPNVDSVGS=VP20049207PJFETVGSVPVGDVPVGSVPVGDVP20049208PJFETVGSVPVGDVPVDSVGSVP(VGDVGSVSD=VGSVDS)VGSVPVGDVPVDSVGSVPVGSVPVGDVPVDSVGSVPVGSVPVGD=VPVDSVGSVP20049209NJFETVGSVPVGDVPVDSVGSVP(VGDVGSVSD=VGSVDS)VGSVPVDSVGSVPVGSVPVDSVGSVPVGSVPVDSVGSVP200492010N¾ID=IDSS[1(VGS/VP)]2(a)(b)VP——FETVGS=VP,ID=0RGS——RGS107200492012NP200492013NJFETVp=-3VVVVVVVDSGSP10,4,3=−=−=QDSPGSPGSVVVVVV−=−∴1,PJFETVp=4VVVVVVVDSGSp5.0,0,4−===QDSPGSPGSVVVVVV−=−∴4,200492014NJFETVp=-3VVVVVVVDSGSP6,2,3=−=−=QDSPGSPGSVVVVVV=−∴1,200492015JFETvGS1JFET−−−=212PDSPDSPGSDSSDVVVVVVIIVDS−−=PDSPGSDSSDVVVVII12200492016112−−−==PGSPDSSDDSDSVVVIIVRV21−=∴PGSDSSDVVIIPGSDSVV−=()DSPGSDSSDVVVIIλ+−=∴112200492017IDSSVGS0JFET0.02/V0.01/V200492018NJFETVP=-3VIDSS=10mA,mAIVVIIDSSPGSDSSVDGSVGS101020==−=∴==VRIVDDD1020=−=∴PGSPGSDSVVVVVVV∴=−=310200492019NJFETVP=-2VIDSS=4mA,SDGSRIV−=2221141−=−=∴DPGSDSSDIVVII1;421mAImAIDD==41mAIIDD==20049202012mAIIDD==VRIVDDD1020=−=∴VRIVSDS1==VVVVVVVVVPGSDSPGSDS211219−=−==+−=−=∴2004920212DSSDmDSSDPDSSPGSPDSSGSDmIIgIIVIVVVIdVdIg0212=−=−−==200492022−−==PGSPDSSGSDmVVVIdVdIg12VmAgm/2321392=−×=∴NJFETVP=-3VIDSS=9mA,ro=gmVi0.1VVoVkmAVmAVgVVimi2102.02.0,1.00=Ω×=∆∴=∆=∆2004920234.2.(MetalOxideSemiconductorFET)MOSFET→NP→NP1.NMOS14DSGB----gsdb----N++NPsgdb2004920242uGSuGS=0VdsuGSPPid---PsgN+bdVDD+N---sPgDDV+Nd+bNVGGiduGS0V200492025200492026200492027UT——UGSNMOSuGSUTuGSUTuGSuDSID200492028uDSiduGSUTVDSIDUT=2VuGS=4V---sPgDDV+Nd+bNVGGid---GGbVdsiNgDD+dPVN+---Pd+dDDVs+NNbiGGVgcudsugd=UTdudsudsidauds=0id=0budsid200492029N3iD=f(uDS)uGS=constai(V)(mA)DDSuGS=6Vuu=5VGS=4VuGSu=3VGSbcd200492030iD=f(uGS)uDS=constuDS=10Vi(mA)DGS=6Vuu=5VGS=4VuGSu=3VGSuDS(V)Di(mA)10V12341432(V)uGS246UT200492031——gmgm=∆iD/∆uGSuDS=const(mS)gmgmgm1(mA)DSu=6V=3VuuGS(V)1D624i43=5V(mA)243iDGS210V(V)uGSiDGSuiD2004920322.NMOSFETSiO2uGS=0uGS=0uDSiDuGS0iDuGS0iDUT——uGS----gs+NPdbN++++++++++++----sbgd200492033NMOSFET1GSu01D(V)-12-2(mA)432i42uu310V=+2V1DSGSD(mA)i=-1VuGSGSGS=0V=+1Vuu(V)=-2VUTGSuUT200492034NP200492035NP200492036NMOSVGSVTVGSVTVDSVGSVT(VGDVGSVSD=VGSVDS)VGSVTVDSVGSVTVGSVTVDSVGSVT2004920373MOS(1)NMOS()−−=TTGSDSDSTGSDVVVVVVVLWKIGSV,0,2'0=GIWLK’200492038VDSVGSVT()22'TGSDVVLWKI−=∴()()DSTGSDVVVLWKIλ+−=∴12'2200492039NMOSVT=2VVDS=VGS=3VID=1mA,1VDS=5VVGS=4VID2VDSVGS=4VVGS=3VVGSVTVDSVGSVT()22'TGSDVVLWKI−=()22/12',232'1VmALWKKLWK==∴−=200492040()mAKID4242=−=(1)(2)VDSVDSVGSVT()()TGSTGSDDSDSVVKVVLWKIVR−=−==∴21'1Ω=∴=2504VVDSGSRΩ=∴=5003VVDSGSR2004920412212'−=TGSTDVVLWVKILWVKVVIITTGSDSSD2'I,12DSS2=−=200492042NMOSVT=2VVGS=0VID=8mA,VGS=1VVDSIDVVVVTGSDS3)2(1min=−−=−=mAIIDSSVDGS80===mAVVIITGSDSSD182118122=−−=−=∴2004920432GSDmVIg∆∆=DDDSdsIIVrλ1=∆∆=2/1'2==DGSDmILWKdVdIgCGSCGDSiO2CDSPN200492044NMOSK’=26uA/V2,W/L=64,VT=1V0.01/V,gmrds(1)VGS=2V(2)ID=1mA()uAVVLWKITGSD6402'2=−=(1)Ω==∴krVmAgdsm3.156,/28.1(2)ID=1mAΩ==∴krVmAgdsm100,/6.12004920454PMOSFETPMOSFETNMOSFETNPNPNP2004920465.MOS1()UT2gmgm=∆iD/∆uGSuDS=const3RGS——MOSsio21091015200492047FETJFETMOSFETFETFET2004920482004920494144413418423