©2005FairchildSemiconductorCorporation1•NPTTrenchTechnology,Positivetemperaturecoefficient•Lowsaturationvoltage:VCE(sat),typ=2.0V@IC=25AandTC=25°C•Lowswitchingloss:Eoff,typ=0.96mJ@IC=25AandTC=25°C•ExtremelyenhancedavalanchecapabilityDescriptionUsingFairchild'sproprietarytrenchdesignandadvancedNPTtechnology,the1200VNPTIGBTofferssuperiorconductionandswitchingperformances,highavalancheruggednessandeasyparalleloperation.Thisdeviceiswellsuitedfortheresonantorsoftswitchingapplicationsuchasinductionheating,microwaveoven,etc.AbsoluteMaximumRatingsThermalCharacteristicsGCEGCEGCETO-3PSymbolDescriptionFGA25N120ANTDUnitsVCESCollector-EmitterVoltage1200VVGESGate-EmitterVoltage±20VICCollectorCurrent@TC=25°C50ACollectorCurrent@TC=100°C25AICMPulsedCollectorCurrent(Note1)75AIFDiodeContinuousForwardCurrent@TC=100°C25AIFMDiodeMaximumForwardCurrent150APDMaximumPowerDissipation@TC=25°C312WMaximumPowerDissipation@TC=100°C125WTJOperatingJunctionTemperature-55to+150°CTstgStorageTemperatureRange-55to+150°CTLMaximumLeadTemp.forsolderingPurposes,1/8”fromcasefor5seconds300°CSymbolParameterTyp.Max.UnitsRθJCThermalResistance,Junction-to-CaseforIGBT--0.4°C/WRθJCThermalResistance,Junction-to-CaseforDiode--2.0°C/WRθJAThermalResistance,Junction-to-Ambient--40°C/W2=25°CunlessotherwisenotedNotes:(1)Repetitiverating:Pulsewidthlimitedbymax.junctiontemperatureDeviceMarkingDevicePackageReelSizeTapeWidthQuantityFGA25N120ANTDFGA25N120ANTDTO-3P----30SymbolParameterTestConditionsMin.Typ.Max.UnitsOffCharacteristicsICESCollectorCut-OffCurrentVCE=VCES,VGE=0V----3mAIGESG-ELeakageCurrentVGE=VGES,VCE=0V----±250nAOnCharacteristicsVGE(th)G-EThresholdVoltageIC=25mA,VCE=VGE3.55.57.5VVCE(sat)CollectortoEmitterSaturationVoltageIC=25A,VGE=15V--2.02.5VIC=25A,VGE=15V,TC=125°C--2.15--VIC=50A,VGE=15V--2.65--VDynamicCharacteristicsCiesInputCapacitanceVCE=30V,VGE=0V,f=1MHz--3700--pFCoesOutputCapacitance--130--pFCresReverseTransferCapacitance--80--pFSwitchingCharacteristicstd(on)Turn-OnDelayTimeVCC=600V,IC=25A,RG=10Ω,VGE=15V,InductiveLoad,TC=25°C--50--nstrRiseTime--6090nstd(off)Turn-OffDelayTime--190--nstfFallTime--100180nsEonTurn-OnSwitchingLoss--4.16.2mJEoffTurn-OffSwitchingLoss--0.961.5mJEtsTotalSwitchingLoss--5.067.7mJtd(on)Turn-OnDelayTimeVCC=600V,IC=25A,RG=10Ω,VGE=15V,InductiveLoad,TC=125°C--50--nstrRiseTime--60--nstd(off)Turn-OffDelayTime--200--nstfFallTime--154--nsEonTurn-OnSwitchingLoss--4.36.9mJEoffTurn-OffSwitchingLoss--1.52.4mJEtsTotalSwitchingLoss--5.89.3mJQgTotalGateChargeVCE=600V,IC=25A,VGE=15V--200300nCQgeGate-EmitterCharge--1523nCQgcGate-CollectorCharge--100150nC3=25°CunlessotherwisenotedSymbolParameterTestConditionsMin.Typ.Max.UnitsVFMDiodeForwardVoltageIF=25ATC=25°C--2.03.0VTC=125°C--2.1--trrDiodeReverseRecoveryTimeIF=25AdI/dt=200A/µsTC=25°C--235350nsTC=125°C--300--IrrDiodePeakReverseRecoveryCur-rentTC=25°C--2740ATC=125°C--31--QrrDiodeReverseRecoveryChargeTC=25°C--31304700nCTC=125°C--4650--4=15VTC=25°CTC=125°CCollectorCurrent,IC[A]Collector-EmitterVoltage,VCE[V]024681002040608010012014016018010V9V8V7V20V17V15V12VVGE=6VTC=25°CCollectorCurrent,IC[A]Collector-EmitterVoltage,VCE[V]2550751001251.52.02.53.0CommonEmitterVGE=15V40AIC=25ACollector-EmitterVoltage,VCE[V]CaseTemperature,TC[°C]04812162004812162040A25ACommonEmitterTC=-40°CIC=12.5ACollector-EmitterVoltage,VCE[V]Gate-EmitterVoltage,VGE[V]04812162004812162040A25ACommonEmitterTC=125°CIC=12.5ACollector-EmitterVoltage,VCE[V]Gate-EmitterVoltage,VGE[V]04812162004812162040A25ACommonEmitterTC=25°CIC=12.5ACollector-EmitterVoltage,VCE[V]Gate-EmitterVoltage,VGE[V]5(Continued)Figure7.CapacitanceCharacteristicsFigure8.Turn-OnCharacteristicsvs.GateResistanceFigure9.Turn-OffCharacteristicsvs.Figure10.SwitchingLossvs.GateResistanceGateResistanceFigure11.Turn-OnCharacteristicsvs.Figure12.Turn-OffCharacteristicsvs.CollectorCurrentCollectorCurrent01020304050607010100CommonEmitterVCC=600V,VGE=±15VIC=25ATC=25°CTC=125°Ctd(on)trSwitchingTime[ns]GateResistance,RG[Ω]1100500100015002000250030003500400045005000CissCossCommonEmitterVGE=0V,f=1MHzTC=25°CCrssCapacitance[pF]Collector-EmitterVoltage,VCE[V]010203040506070110CommonEmitterVCC=600V,VGE=±15VIC=25ATC=25°CTC=125°CEonEoffSwitchingLoss[mJ]Gate