第九章+化合物半导体集成技术

1《半导体制造技术》课程第九章：化合物半导体集成技术刘洪刚研究员Email:[e-mail]微波器件与集成电路研究室中国科学院微电子研究所1.Shur,M.S.PhysicsofSemiconductorDevices.EnglewoodCliffs,NJ:Prentice-Hall,1990.ISBN:0136664962.2.Sze,S.M.PhysicsofSemiconductorDevices.2nded.NewYork,NY:Wiley,1981.ISBN:047109837X.3.Sze,S.M.,ed.HighSpeedSemiconductorDevices.NewYork,NY:Wiley,1990.ISBN:0471623075.4.Adachi,Sadao.PhysicalPropertiesofIII-VSemiconductorCompounds:InP,InAs,GaAs,GaP,InGaAs,andInGaAsP.NewYork,NY:JohnWiley&Sons,1992.ISBN:0471573299.5.Cook,P.,E.Martinez,J.Tantillo,andF.L.Schuermeyer.BandEdgeAlignmentinHeterstructures.AppliedPhysicsLetters55,no.18(October1989):1877-1878.6.Fitzgerald,E.A.DislocationinStrained-layerEpitaxy:Theory,Experiment,andApplications.MaterialsScienceReports7(1991):87-142.7.Mohammad,S.N.,andH.Morkoc.ProgressandProspectsofGroup-IIINitrideSemiconductors.ProgressinQuantumElectronics20(1996):361-525.8.Monemar,B.,andG.Pozina.GroupIII-nitrideBasedHeteroandQuantumStructures.ProgressinQuantumElectronics24(2000):239-290.9.Bollaert,S.,Y.Cordier,M.Zaknoune,T.Parenty,H.Happy,andA.Cappy.HEMT'sCapabilityforMillimeter-waveApplications.AnnalsofTelecommunications56(2001):15-26.10.Houston,P.A..High-frequencyHeterojunctionBipolarTransistorDeviceDesignandTechnology.ElectronicsandCommunicationEngineeringJournal12(October2000):220-228.11.Delage,S.L.HeterojunctionBipolarTransistorsforMillimeterWavesApplications:TrendsandAchievements.AnnalsofTelecommunications56(2001):5-14.12.Schubert,E.F.LightEmittingDiodes.Cambidge,UK:CambridgeUniversityPress,2003.ISBN:0521533511.13.Mukai,T.RecentProgressinGroup-IIINitrideLight-emittingDiodes.IEEEJonSelectedTopicsonQuantumElectronics8(2002):264-270.参考书目与文献2第一节：化合物半导体异质结与生长技术第二节：化合物半导体HEMT器件工艺第三节：化合物半导体HBT器件工艺第四节：化合物半导体LED器件工艺内容提要31103400.170.420.122ZnTe28530~0.70.17ZnSe51401.40.28ZnSⅡ-Ⅵ460330000.0240.410.027InAs15060600.120.560.077InP140077000.0560.330.049GaSb42085000.0820.450.065GaAs1202000.140.860.12GaPⅢ-Ⅴ19003800－0.370.56Ge47513500.240.550.26SiⅣμhμempl*mph*me*迁移率有效质量材料化合物半导体的物理性质与硅材料相比，III-V族半导体具有非常高的电子迁移率，是制造高速电子器件的理想材料。同时具有直接带隙，能高效发射与探测光子。III-V族化合物半导体与半导体异质结III-V族半导体存在一系列晶格匹配的化合物半导体，可以实现高质量的半导体异质结，这将使高性能电子与光子器件的设计由“杂质工程”进化到“能带工程”。GaAs体系：GaAs/AlGaAs,GaAs/InGaPInP体系：InP/InGaAs,InP/InAlAs,InP/GaAsSb,InGaAs/InAlAs等GaN体系：GaN/AlGaN,GaN/InAlN,GaN/InGaNGaSb体系：GaSb/InAs,GaSb/AlGaSb,GaSb/InAlAsSb等LzLxLz3D0D1D2DLyLzLxEgapE00E01E0E1E000E001DensityofstatesPNPNPNPNEnergy低维异质结材料中的量子效应量子点量子线量子阱体材料(1)(2)(3)One-sideInjectionPropozal—1948(W.Shokley)Experiment—1965(Zh.Alferovetal.)Super-injectionTheory—1966(Zh.Alferovetal.)Experiment—1968(Zh.Alferovetal.)Diffusioninbuilt-inquasielectricfieldTheory—1956(H.Kroemer)Experiment—1967(Zh.Alferovetal.)(4)(5)ElectronsFnEcΔEvΔEcFpElectronsHolesFnEcEvFpElectronsHolesEcEvFnEcEvFpElectronandopticalconfinementPropozal—1963(Zh.Alferovetal.)Experiment—1968(Zh.Alferovetal.)SuperlatticesandquantumwellsTheory—1962(L.V.Keldysh)Firstexperiment—1970(L.Esakietal.)7经典异质结理论TheNobelPrizeinPhysics2000TheNobelPrizeinPhysics2000forbasicworkoninformationandcommunicationtechnologyZhoresI.Alferovb.1930HerbertKroemerb.1928JackS.Kilby1923–2005“forhispartininventionoftheintegratedcircuit”“fordevelopingsemiconductorheterostructuresusedinhigh-speed-andopto-electronics”8(byI.Hayashi,1985)异质结家族异质结家族HighPowerElectronicsLDLEDAPDPINDetectorArrayFETHEMTHBTGaAsICHSSolarCell'sPhasedArrayLDMulti-WavelengthLDPIN-FETLD-DriverOneChipRepeaterMonolithicOEICSwitchOpticalConnectionBetweenLSIsOpticalWiringInsideLSISSIMSILSIIntegrationofOpticalandElectronicDevicesIntegrationofOpticalDevicesIntegrationofBifunctionalDevicesWideBandOpticalTransitionWavelengthDivisionMultiplexityAllOpticalLinkLaserDiskLaserPrinterOpticalSensorAdvancedLANBidirectionalVideoNetworkSuperHighSpeedComputerOneChipComputerIntegrationTechnologyDeviceTechnologyProcessTechnologySubstrateCrystalEpitaxiThinFilmMaterialCharacterization10需要原子级可控的外延技术形成半导体异质结11SchematicviewofMBEmachineRiber32PMESFET,HEMTQCL,RTD,Esaki-TsuSLPD,LED,LDMBE—highpurityofmaterials,insitucontrol,precisionofstructuregrowthinlayerthicknessandcompositionMBE生长III-V族半导体异质结12MBE的工作原理•MBEoperatesunderanultra-highvacuum(10-10torr)environment.Thatmeansduringgrowth,thebackgroundresidualgassuchasH2O,CO2,andetchavenegligiblepartialpressurescomparedtothesources.•Thesourceeitherevaporatesat~600C(solid-sourceMBE)orcracksintoelementalform(gas-sourceMBE)anddepositsontoaheatedsubstrate(~400C).13MBE的残留气体分析仪（RGA）14高真空中分子运动的自由程15反射高能电子衍射仪（RHEED）一个振荡峰代表一个单原子层RHEED发射的电子属于掠角衍射（5度），可以观测表面重构16SchematicviewofMOCVDchamberUniquemethodofwaferrotationleadstohighuniformityofstructureinwaferandhighreproducibilityfromwafertowaferAlO23HEMTLEDLDMOCVD—highpurityofmaterials,large-scaledevice-orientedtechnologyAixtronAIX2000HT(upto6x2”wafers)ProductionorientedgrowthmachineforthefabricationofdevicestructuresEpiquipVP50-RP(upto1x2”wafer)FlexiblegrowthmachineforlaboratorystudiesMOCVD生长III-V族半导体异质结18MOCVD的工作原理zPrecursors(TMGaforGaandTBAforAs)carriedbyhydrogengastothereactor.zPrecursorstransportedfromreactortoptotheheatedsubstratesurfacewithafluxr