2SC4177贴片三极管-SOT-323三极管封装2SC4177规格参数

A,Oct,2010JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-323Plastic-EncapsulateTransistors2SC4177TRANSISTOR(NPN)FEATURESHighDCCurrentGainComplementaryto2SA1611HighVoltageAPPLICATIONSGeneralPurposeAmplificationMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)SymbolParameterValueUnitVCBOCollector-BaseVoltage60VVCEOCollector-EmitterVoltage50VVEBOEmitter-BaseVoltage5VICCollectorCurrent100mAPCCollectorPowerDissipation150mWRΘJAThermalResistanceFromJunctionToAmbient833℃/WTjJunctionTemperature150℃TstgStorageTemperature-55～+150℃ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinTypMaxUnitCollector-basebreakdownvoltageV(BR)CBOIC=100µA,IE=060VCollector-emitterbreakdownvoltageV(BR)CEOIC=1mA,IB=050VEmitter-basebreakdownvoltageV(BR)EBOIE=100µA,IC=05VCollectorcut-offcurrentICBOVCB=60V,IE=0100nAEmittercut-offcurrentIEBOVEB=5V,IC=0100nADCcurrentgainhFE*VCE=6V,IC=1mA90600Collector-emittersaturationvoltageVCE(sat)IC=100mA,IB=10mA0.3VBase-emittersaturationvoltageVBE(sat)IC=100mA,IB=10mA1VBase-emittervoltageVBEVCE=6V,IC=1mA0.550.65VTransitionfrequencyfTVCE=6V,IC=10mA250MHzCollectoroutputcapacitanceCobVCB=6V,IE=0,f=1MHz3pF*Pulsetest:pulsewidth≤350μs,dutycycle≤2.0%.CLASSIFICATIONOFhFERANKL4L5L6L7RANGE90–180135–270200–400300–600MARKINGL4L5L6L7SOT–3231.BASE2.EMITTER3.COLLECTOR【南京南山半导体有限公司—长电三极管选型资料】0.11100.111010011010010000.20.40.60.81.011010002550751001251500501001502001101000.000.050.100.150.20024681001234567891101000.00.40.81.2300100f=1MHzIE=0/IC=0Ta=25℃20VCB/VEBCob/Cib——CobCibCAPACITANCEC(pF)REVERSEVOLTAGEV(V)2SC4177TypicalCharacterisiticshFE——COMMONEMITTERVCE=6VICTa=25℃Ta=100℃DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)COMMONEMITTERVCE=6VTa=100℃Ta=25℃COLLECTORCURRENTIC(mA)BASE-EMMITERVOLTAGEVBE(V)PC——TaCOLLECTORPOWERDISSIPATIONPC(mW)AMBIENTTEMPERATURETa()℃IC——β=10Ta=100℃Ta=25℃ICVCEsat——COLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(V)COLLECTORCURRENTIC(mA)StaticCharacteristic20uA18uA16uA14uA12uA10uA8uA6uA4uAIB=2uACOMMONEMITTERTa=25℃COLLECTORCURRENTIC(mA)COLLECTOR-EMITTERVOLTAGEVCE(V)VBEβ=10ICVBEsat——Ta=100℃Ta=25℃BASE-EMITTERSATURATIONVOLTAGEVBEsat(V)COLLECTORCURRENTIC(mA)A,Oct,2010Min.Max.Min.Max.A0.9001.1000.0350.043A10.0000.1000.0000.004A20.9001.0000.0350.039b0.2000.4000.0080.016c0.0800.1500.0030.006D2.0002.2000.0790.087E1.1501.3500.0450.053E12.1502.4500.0850.096ee11.2001.4000.0470.055LL10.2600.4600.0100.018θ0°8°0°8°0.525REF.0.021REF.SymbolDimensionsInMillimetersDimensionsInInches0.650TYP.0.026TYP.【南京南山半导体有限公司—长电三极管选型资料】ThebottomgasketThetopgasket3000×1PCS3000×15PCSLabelontheReelLabelontheInnerBoxLabelontheOuterBoxQALabelSealtheboxwiththetapeSealtheboxwiththetapeStamp“EMPTY”ontheemptyboxInnerBox:210mm×208mm×mmOuterBox:440mm×440mm×230mm