AZC099-04S

AZC099-04SLowCapacitanceESDProtectionArrayForHighSpeedDataInterfacesRevision2013/08/27©2013-2014AmazingMicro.1
ESDProtectfor4high-speedI/Ochannels
ProvideESDprotectionforeachchanneltoIEC61000-4-2(ESD)±15kV(air),±15kV(contact)IEC61000-4-4(EFT)(5/50ns)40AIEC61000-4-5(Lightning)(8/20μs)5.5A
Forlowoperatingvoltageapplications:5V,4.2V,3.3V,2.5V
Lowcapacitance:1.0pFtypical
Fastturn-onandLowclampingvoltage
ArrayofsurgerateddiodeswithinternalequivalentTVSdiode
Smallpackagesavesboardspace
Solid-statesilicon-avalancheandactivecircuittriggeringtechnologyApplications
VideoGraphicsCards
USB2.0PowerandDatalinesprotection
NotebookandPCComputers
MonitorsandFlatPanelDisplays
IEEE1394FirewirePorts
SIMportsDescriptionAZC099-04Sisahighperformanceandlowcostdesignwhichincludessurgerateddiodearraystoprotecthighspeeddatainterfaces.TheAZC099-04Sfamilyhasbeenspecificallydesignedtoprotectsensitivecomponents,whichareconnectedtodataandtransmissionlines,fromover-voltagecausedbyElectrostaticDischarging(ESD),ElectricalFastTransients(EFT),andLightning.AZC099-04Sisauniquedesignwhichincludessurgerated,lowcapacitancesteeringdiodesandauniquedesignofclampingcellwhichisanequivalentTVSdiodeinasinglepackage.Duringtransientconditions,thesteeringdiodesdirectthetransienttoeitherthepowersupplylineortothegroundline.Theinternaluniquedesignofclampingcellpreventsover-voltageonthepowerline,protectinganydownstreamcomponents.AZC099-04SmaybeusedtomeettheESDimmunityrequirementsofIEC61000-4-2,Level4(±15kVair,±8kVcontactdischarge).OneAZC099-04Scanbeusedtoreplace4BAV99devicesina5Vapplicationoralowerthan5Vapplication.CircuitDiagram134625PinConfiguration654123I/O1I/O2I/O3I/O4VDDGNDJEDECSOT23-6L(TopView)AZC099-04SLowCapacitanceESDProtectionArrayForHighSpeedDataInterfacesRevision2013/08/27©2013-2014AmazingMicro.2(tp=8/20μs)IPP5.5AOperatingSupplyVoltage(VDD-GND)VDC6VESDperIEC61000-4-2(Air)ESDperIEC61000-4-2(Contact)VESD1515kVLeadSolderingTemperatureTSOL260(10sec.)oCOperatingTemperatureTOP-55to+85oCStorageTemperatureTSTO-55to+150oCDCVoltageatanyI/OpinVIO(GND–0.5)to(VDD+0.5)VELECTRICALCHARACTERISTICSPARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSReverseStand-OffVoltageVRWMPin5topin2,T=25oC5VReverseLeakageCurrentILeakVRWM=5V,T=25oC,Pin5topin22μμμμAChannelLeakageCurrentICH_LeakVPin5=5V,VPin2=0V,T=25oC1μμμμAReverseBreakdownVoltageVBVIBV=1mA,T=25oCPin5toPin26.2VForwardVoltageVFIF=15mA,T=25oCPin2toPin50.81.2VClampingVoltageVCLIPP=5A,tp=8/20μs,T=25oCAnyChannelpintoGround910VESDHoldingVoltageVholdIEC61000-4-2+6kV,T=25oC,Contactmode,AnyChannelpintoGround.11.5VChannelInputCapacitanceCINVpin5=5V,Vpin2=0V,VIN=2.5V,f=1MHz,T=25oC,AnyChannelpintoGround1.01.2pFChanneltoChannelInputCapacitanceCCROSSVpin5=5V,Vpin2=0V,VIN=2.5V,f=1MHz,T=25oC,BetweenChannelpins0.10.12pFVariationofChannelInputCapacitance△CINVpin5=5V,Vpin2=0V,VIN=2.5V,f=1MHz,T=25oC,Channel_xpintoGround-Channel_ypintoGround0.030.05pFAZC099-04SLowCapacitanceESDProtectionArrayForHighSpeedDataInterfacesRevision2013/08/27©2013-2014AmazingMicro.3(oC)0255075100125150%ofRatedPowerorIPP0102030405060708090100110PeakpulseCurrent(A)4.55.05.56.06.5ClampingVoltage(V)6.06.57.07.58.08.59.09.510.010.511.0ClampingVoltagevs.PeakPulseCurrentWaveformParameters:tr=8μμμμstd=20μμμμsI/OpintoGNDpinPeakpulseCurrent(A)4.55.05.56.06.57.0ForwardVoltage(V)0.00.51.01.52.02.53.03.54.04.55.0ForwardVoltagevs.ForwardCurrentWaveformParameters:tr=8μμμμstd=20μμμμsI/OpintoGNDpinInputVoltage(V)012345InputCapacitance(pF)0.00.20.40.60.81.01.21.41.61.82.0TypicalVariationofCINvs.VINVDD=5V,GND=0V,f=1MHz,T=25oC,TransmissionLinePulsing(TLP)MeasurementTransmissionLinePulsing(TLP)Voltage(V)0123456789101112TransmissionLinePulsing(TLP)Current(A)024681012141618I/OtoGNDAZC099-04SLowCapacitanceESDProtectionArrayForHighSpeedDataInterfacesRevision2013/08/27©2013-2014AmazingMicro.4(IESD1)willpassthroughtheESDcurrentpath1.Thus,theESDclampingvoltageVCLofdatalinecanbedescribedasfollow:VCL=FwdvoltagedropofD1+supplyvoltageofVDDrail+L1×d(IESD1)/dt+L2×d(IESD1)/dtWhereL1istheparasiticinductanceofdataline,andL2istheparasiticinductanceofVDDrail.AnESDcurrentpulsecanrisefromzerotoitspeakvalueinaveryshorttime.Asanexample,alevel4contactdischargepertheIEC61000-4-2standardresultsinacurrentpulsethatrisesfromzeroto30Ain1ns.Hered(IESD1)/dtcanbeapproximatedby∆IESD1/∆t,or30/(1x10-9).Sojust10nHoftotalparasiticinductance(L1andL2combined)willleadtoover300VincrementinVCL!Besides,theESDpulsecurrentwhichisdirectedintotheVDDrailmaypotentiallydamageanycomponentsthatareattachedtothatrail.Moreover,itiscommonfortheforwardvoltagedropofdiscre