南邮光电子学(双语)复习要点

光电子学期末复习资料3423310196.63101.3810/9.1101.610BhJskJKmkgeC绪论1、光电子器件有哪些功能；Informationgeneration,Informationtransfer,Informationenhancement/amplification,Informationmanipulation,Informationreception/detection,Informationdisplay2、有用的光电子器件应该拥有的特性；Highgain,Non-linearresponse,Input/outputisolation,Tuability,Highspeed,Lowpowerconsumption,Highpoweroutput,Hightemperature3、电子器件和光电子器件的优缺点对比；Electronicdevices:a.metallicinter-connectslimittheinter-connectivityofthedevices;b.difficulttotransmitinformationoververylongdistances;c.externalelectromagneticinterference(EMI)effects;d.chargedparticles’scatteringprocessOptoelectronicdevices:a.Immunitytoelectromagneticb.Non-interferenceoftwoormorecrossedbeamsc.Highparallelismd.Highspeed-highbandwidthe.specialfunctiondevicef.wavenatureoflightforspecialdevicesg.Nonlinearmaterialsh.Photonics-electronicscoupling4、光电子器件的应用范围；a.Opticalcommunications:CableTV,Longhaulcommunication,LANcommunicationb.Datacommunication:Equipmentcontrol,Localareanetwork,Factoryautomationc.Defenseapplications:Laserguidedsystems,Radard.Consumerelectronicsproduct:Compactdisc,Laserprinter,Nightvision,thermalimaging,Videodisclibraries5、三个窗口波长；850nm,1310nm,1550nm6、光电子器件的发展趋势；WDMOEICTrend:a.highresponsespeedb.wavelengthdivisionmultiplexingtechnology(WDM)c.functiondevices:opticalfiberLD,opticalfiberamplifierd.optoelectronicintegratedtechnology(OEIC)第一章1、光电子器件的工作机理，基于光和电磁场的相互作用；Optoelectronicdevicedependsontheinteractionsofphotonsorelectromagneticfieldwithsemiconductors.Interaction:photon---semiconductorElectromagneticField---semiconductor2、光在半导体中的传播规律：按指数规律衰减；zeIzI)0()(3、折射率实部、虚部；TherealpartofindexspeedoflightTheimaginaryofindexattenuationoflight4、光的吸收和光的发射（画示意图）；受激辐射和自发辐射比较；Thestimulatedemissionisduetotheinitialphotonspresentinthesystemandtheemittedphotonsmaintainphasecoherentwiththeinitialphotons.Thespontaneousemissioncomesfromtheperturbationsandtheemittedphotonsareincoherentwithnophaserelationship.5、直接带间跃迁和间接带间跃迁的物理图像、特点、吸收系数；特点：Verticalink-space吸收系数：1/2()gAhE,Aisaconstant特点：（1）Notverticalink-space（2）Mediatedbyaphononinteractionorotherscatteringprocess（3）Secondorderprocess吸收系数：210))](([gEhTKK0Kisaconstant1()KTisatemperaturedependentfactor7、辐射的种类：辐射复合和非辐射复合，俄歇复合的两面性；Non-RadiativeRecombination------NoemittingphotonsRadiativeRecombination------emittingphotons俄歇复合的两面性:（1）Augerprocessesareunimportantinsemiconductorswithbandgapslargerthan1.5eV（2）Theybecomequiteimportantinnarrowbandgapmaterialsandarethusaserioushindranceforthedevelopmentoflongwavelengthlasers.（3）Augerprocessescouldbemediatedbydefects.DeeplevelsinthebandgapcanbeinvolvedintheAugerprocesses.（4）Forhighqualitymaterials,thesedefectassistedprocessesarenotimportant.8、粒子束反转时的自发辐射率；0044pnRspon9、增益与费米分布函数之间的关系；))](1()([)(hheeEfEfhg10、俘获时间：CCHC、CCHS；nthtnnrN1，pthtpnrN111、CCHC的全称及示意图，并说明过程；全称：CCHC-----Conduction(electron)--Conduction(electron)--heavyhole--Conduction(electron)Initialstate:2electrons+1holeFinalstate:hotelectronAfterthescattering,ane-hpairislostandoneisleftwithahotelectron.Thehotelectronsubsequentlylosesitsexcessenergybyemittingphonons.12、俄歇复合率与n之间的关系，俄歇复合率的计算及影响俄歇复合率的因素：带隙、温度等；3AugerRFn带隙增加，俄歇复合率下降；温度升高，俄歇复合率上升。13、扩散长度的理解及计算；Theaveragedistanceofahole（electron）canmovebeforerecombinationpppDL,nnnDL14、带隙重整效应（第1.11节）；Thepresenceoftheexcesselectronsinconductionbandorholesinvalencebandshiftsthebandgapenergy,decreasingitslightly.Thisphenomenonisoftencalledbandgaprenormalization第二章：1、光检测的过程；OpticalAbsorptionElectron-HoleGenerationDiffusionandDriftDetection2、直接带间跃迁的特点、1)MomentumConservation动量守恒：theelectron-holetransitionsareverticalink-space2)EnergyConservation能量守恒3、本征吸收的必要条件、类型、示意图、特点，及特征参量（吸收系数、截止波长或频率）；theessentialcondition(本征吸收的必要条件):cghhE类型：1.DirectAbsorption直接吸收吸收系数:11322260()()410ggrEEmAm（与吸收光子能量有关）2.IndirectAbsorption间接吸收吸收系数:201()()()ingKKTE截止频率（cutofffrequency）:gcEh截止波长（cutoffwavelength）:1.24()()cgghcmEEeV4、分析本征吸收的吸收图谱的变化规律（图2.3的Si和GaAs吸收系数曲线）；Si、Ge:weakabsorptionatthebandedge（indirectabsorption）GaAs:strongabsorptionatthebandedge(directabsorption)5、例题2.2；AGedetectoristobeusedforanopticalcommunicationsystemusingaGaAslaserwithemissionenergyof1.43eV.Calculatethedepthofthedetectorneededtobeabletoabsorb90%oftheopticalsignalenteringthedetector.Condition:Gedetector412.510cmGaAslaser1.43eVCalculation:thedepthofGefor90%opticalsignalbeabsorbedSolution:Toabsorb90%oftheopticalsignal190%10%(0)topPP10%Le1ln0.10.92Lm6、非本征吸收的类型；1).ImpurityAbsorption（杂质吸收）2).IntrabandAbsorption(带内吸收)3).ExcitonAbsorption(激子吸收)7、长波长检测的方法；Longwavelengthdetector(长波长检测器)(1)Intrinsicdetector:averynarrowbandgapdifficulttofabricatehighqualitydevices(2)Extrinsicdetector:thickSampleOperatedatlowT8、产生率、响应度、量子效率的含义及其计算；例题2.3；1).Rateofe-hpairgenerationGLGListhecarriergenerationperunitvolumepersecond:()()opLphPxGJx()phJxisthephotonfluxdensityimpingingatpointx2).Responsivity(响应度)Theratioofthephotocurrenttotheopticalpowerimpinginguponthesemiconductor.LLopphopJJPRPPhoton(gE)e~hpairelectricfi