IXTQ82N25P中文资料

©2004IXYSAllrightsreservedSymbolTestConditionsMaximumRatingsVDSSTJ=25°Cto150°C250VVDGRTJ=25°Cto150°C;RGS=1MΩ250VVGSM±20VID25TC=25°C82AID(RMS)Externalleadcurrentlimit75AIDMTC=25°C,pulsewidthlimitedbyTJM250AIARTC=25°C60AEARTC=25°C40mJEASTC=25°C1.0Jdv/dtIS≤IDM,di/dt≤100A/µs,VDD≤VDSS,10V/nsTJ≤150°C,RG=4ΩPDTC=25°C500WTJ-55...+150°CTJM150°CTstg-55...+150°CTL1.6mm(0.062in.)fromcasefor10s300°CMdMountingtorque1.13/10Nm/lb.in.WeightTO-3P5.5gTO-26410gTO-2685.0gG=GateD=DrainS=SourceTAB=DrainDS99121B(04/04)SymbolTestConditionsCharacteristicValues(TJ=25°C,unlessotherwisespecified)Min.Typ.Max.VDSSVGS=0V,ID=250µA250VVGS(th)VDS=VGS,ID=250µA2.55.0VIGSSVGS=±20VDC,VDS=0±100nAIDSSVDS=VDSS25µAVGS=0VTJ=125°C250µARDS(on)VGS=10V,ID=0.5ID2535mΩPulsetest,t≤300µs,dutycycled≤2%PolarHTTMPowerMOSFETIXTQ82N25PVDSS=250VIXTT82N25PID25=82AIXTK82N25PRDS(on)=35mΩΩΩΩΩN-ChannelEnhancementModeFeatureszInternationalstandardpackageszUnclampedInductiveSwitching(UIS)ratedzLowpackageinductance-easytodriveandtoprotectAdvantageszEasytomountzSpacesavingszHighpowerdensityPolarHTTMDMOStransistorsutilizeproprietarydesignsandprocess.USpatentispending.TO-3P(IXTQ)GDS(TAB)TO-268(IXTT)GSD(TAB)PreliminaryDataSheetTO-264(IXTK)GDS(TAB)IXYSreservestherighttochangelimits,testconditions,anddimensions.IXYSMOSFETsandIGBTsarecoveredbyoneormore4,850,0724,931,8445,034,7965,063,3075,237,4815,381,0256,404,065B16,162,6656,534,3436,583,505ofthefollowingU.S.patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B16,259,123B16,306,728B16,683,344SymbolTestConditionsCharacteristicValues(TJ=25°C,unlessotherwisespecified)Min.Typ.Max.gfsVDS=10V;ID=0.5ID25,pulsetest3052SCiss4800pFCossVGS=0V,VDS=25V,f=1MHz900pFCrss210pFtd(on)29nstrVGS=10V,VDS=0.5VDSS,ID=60A20nstd(off)RG=4Ω(External)78nstf22nsQg(on)142nCQgsVGS=10V,VDS=0.5VDSS,ID=0.5ID2532nCQgd74nCRthJC0.25K/WRthCHTO-3P0.21K/WTO-2640.15K/WSource-DrainDiodeCharacteristicValues(TJ=25°C,unlessotherwisespecified)SymbolTestConditionsMin.typ.Max.ISVGS=0V82AISMRepetitive250AVSDIF=IS,VGS=0V,1.5VPulsetest,t≤300µs,dutycycled≤2%trrIF=25A200ns-di/dt=100A/µsQRMVR=100V2.0µCIXTK82N25PIXTQ82N25PIXTT82N25PTO-268OutlineTO-3POutlineTO-264AAOutline©2004IXYSAllrightsreservedFig.2.ExtendedOutputCharacteristics@25ºC02040608010012014016018020002468101214161820VDS-VoltsID-AmperesVGS=10V7V6V8V9VFig.3.OutputCharacteristics@125ºC0102030405060708090012345678VDS-VoltsID-AmperesVGS=10V9V8V5V6V7VFig.1.OutputCharacteristics@25ºC010203040506070809000.511.522.533.54VDS-VoltsID-AmperesVGS=10V9V8V7V6VFig.4.RDS(on)NormalizedtoID25Valuevs.JunctionTemperature0.40.60.811.21.41.61.822.22.42.6-50-250255075100125150TJ-DegreesCentigradeRDS(on)-NormalizedID=82AID=41AVGS=10VFig.6.DrainCurrentvs.CaseTemperature0102030405060708090-50-250255075100125150TC-DegreesCentigradeID-AmperesFig.5.RDS(on)NormalizedtoID25Valuevs.ID0.711.31.61.92.22.52.83.13.43.7020406080100120140160180200ID-AmperesRDS(on)-NormalizedTJ=125ºCTJ=25ºCVGS=10VIXTK82N25PIXTQ82N25PIXTT82N25PIXYSreservestherighttochangelimits,testconditions,anddimensions.IXYSMOSFETsandIGBTsarecoveredbyoneormore4,850,0724,931,8445,034,7965,063,3075,237,4815,381,0256,404,065B16,162,6656,534,3436,583,505ofthefollowingU.S.patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B16,259,123B16,306,728B16,683,344Fig.11.Capacitance1001000100000510152025303540VDS-VoltsCapacitance-pFCissCossCrssf=1MHzFig.10.GateCharge0123456789100153045607590105120135150QG-nanoCoulombsVGS-VoltsVDS=125VID=41AIG=10mAFig.7.InputAdmittance010203040506070809010044.555.566.577.58VGS-VoltsID-AmperesTJ=125ºC25ºC-40ºCFig.8.Transconductance01020304050607080020406080100120140160180ID-Amperesgfs-SiemensTJ=-40ºC25ºC125ºCFig.9.SourceCurrentvs.Source-To-DrainVoltage040801201602002400.30.50.70.91.11.31.5VSD-VoltsIS-AmperesTJ=125ºCTJ=25ºCFig.12.Forward-BiasSafeOperatingArea1101001000101001000VDS-VoltsID-Amperes100µs1msDCTJ=150ºCTC=25ºCRDS(on)Limit10ms25µsIXTK82N25PIXTQ82N25PIXTT82N25P©2004IXYSAllrightsreservedFig.13.MaximumTransientThermalResistance0.010.101.001101001000PulseWidth-millisecondsR(th)JC-(ºC/W)IXTK82N25PIXTQ82N25PIXTT82N25P