Silvaco TCAD 器件仿真2

SilvacoTCAD器件仿真（二）Tangshaohua,SCU17:181Silvaco学习E-Mail:[e-mail]@qq.com上一讲知识回顾和本讲内容上一讲内容：器件仿真的整体思路器件结构，材料特性，物理模型，计算方法，特性获取和分析这一讲安排器件结构生成（2D/3D）ATLAS语法描述结构DevEdit编辑结构17:182Silvaco学习器件仿真流程17:18Silvaco学习3ATLAS描述器件结构ATLAS描述器件结构的步骤17:18Silvaco学习4meshregionelectrodedopingmesh网格定义，状态有mesh,x.mesh,y.mesh,eliminate等Mesh对网格进行控制x.mesh和y.mesh定义网格位置及其间隔(line)17:18Silvaco学习5meshspace.mult=1.5meshinfile=nmos.strx.meshloc=0.1spac=0.05meshEliminate可以在ATLAS生成的mesh基础上消除掉一些网格线，消除方式为隔一条删一条参数columns,rows,ix.low,ix.high,iy.low.ly.high,x.min,x.max,y.min,y.max17:18Silvaco学习6Eliminatecolumnsx.min=0.2x.max=1.4y.min=0.2y.max=0.7Eliminate前Eliminate后regionRegion将mesh中不同位置以区域组织起来语法：Regionnumber=nmaterialposition17:18Silvaco学习7regionnum=1y.max=0.5siliconregionnum=2y.min=0.5y.max=1.0x.min=0x.max=1.0oxideregionnum=3y.min=1.0y.max=2.0x.min=0x.max=1.0GaAs例句：electrodeElectrode定义电极语法：electrodename=en[num=n][substrate]positionregion17:18Silvaco学习8elecname=emitterx.min=1.75x.max=2.0y.min=-0.05y.max=0.05elecname=gatex.min=0.25lenght=0.5elecnum=1name=sourcey.min=0leftlength=0.25elecnum=2name=drainy.min=0rightlength=0.25elecname=anodetopelecname=cathodebottom例句dopingDoping定义掺杂分布17:18Silvaco学习9dopingdistribution_typedopant_typeposition_parameters分布：uniform,gaussian,erfc，具体设置还可分为三组1，Concentrationandjunction2，Doseandcharacteristic3，Concentrationandcharacteristic杂质类型：n.type,p.type位置：region,x.min,x.max,y.min,y.max,peak,junction…Doping例句17:18Silvaco学习10dopinguniformconc=1e16n.typeregion=1dopingregion=1gaussianconc=1e18peak=0.1characteristic=0.05\p.typex.left=0.0x.right=1.0dopingregion=1gaussconc=1e18peak=0.2junct=0.15dopingx.min=0.0x.max=1.0y.min=0.0y.max=1.0n.typeascii\infile=concdata均匀掺杂高斯分布从文件导入杂质分布ATLAS描述的二极管结构17:18Silvaco学习11goatlasmeshx.meshloc=0.00spac=0.05x.meshloc=0.10spac=0.05y.meshloc=0.00spac=0.20y.meshloc=1.00spac=0.01y.meshloc=2.00spac=0.20regionnumber=1x.min=0.0x.max=0.1y.min=0.0\y.max=1.0material=siliconregionnumber=2x.min=0.0x.max=0.1y.min=1.0\y.max=2.0material=siliconelectrodename=anodetopelectrodename=cathodebottomdopinguniformconc=1e18n.typeregion=1dopinguniformconc=1e18p.typeregion=2saveoutfile=diode_0.strtonyplotdiode_0.strDevEdit编辑器件结构17:18Silvaco学习12WorkareaDefiningregionMeshcreationSavethefileDefiningregion添加、替换或删除区域主要参数：区域ID(region=n)、材料(material=c)、区域坐标(points=“0,00,1…”)17:18Silvaco学习13Regionreg=1mat=siliconcolor=0xffb2pattern=0x9\points=“0,00.1,00.1,10,10,0”Regionreg=3name=anodematerial=contactelec.id=1\work.func=0points=“0,00.1,00.1,10,10,0”例句Definingimpurity定义某区域的掺杂主要参数序号：Id,region.id掺杂：impurity,resistivity,杂质分布：peak.value,reference.value,combination.function,concentration.function.{y|x|z},x1,x2,y1,y2,rolloff.y,coc.func.y17:18Silvaco学习14impurity17:18Silvaco学习15Peak.value为杂质浓度reference.value为一定距离后的杂质浓度“Gaussian”,“Gaussian(Dist)”,“ErrorFunction”,“ErrorFunction(Dist)”,“Linear(Dist)”,“Logarithmic”log,“Logarithmic(Dist)”,“Exponential,“Exponential(Dist)”,“StepFunction”分布类型有：Rolloff.{y|x|z}为浓度变化的方向Impurity例子17:18Silvaco学习16impurityid=1region.id=1imp=Donors\x1=0x2=0.1y1=0y2=1\peak.value=1e+18ref.value=1000000000000\comb.func=Multiply\rolloff.y=bothconc.func.y=Constant\rolloff.x=bothconc.func.x=Constantimpurityid=2region.id=4imp=CompositionFractionX\x1=0x2=0y1=0y2=0\peak.value=0.47comb.func=Multiply\rolloff.y=bothconc.func.y=Constant\rolloff.x=bothconc.func.x=ConstantDefiningmeshBase.mesh，网格整体控制参数有height,width，矩形的最大高度和宽度Bound.conditioning，减少边界的网格点Constr.mesh，对网格中三角形做限制主要参数：X1,x2,y1,y2,{max|min}.{height|ratio|width}17:18Silvaco学习17Mesh例句17:18Silvaco学习18base.meshheight=0.1width=0.125#bound.condmax.slope=28max.ratio=300rnd.unit=0.001\line.straightening=1align.pointswhen=automatic#constr.meshmat.type=semiconductormax.angle=180max.ratio=200\max.height=1max.width=1min.height=0.001min.width=0.001#constr.meshx1=0x2=0.1y1=0.0y2=1max.height=0.08min.width=0.01constr.meshx1=−0.01x2=0.11y1=1y2=2max.height=0.1min.width=0.01meshDevedit编辑二极管结构的例子17:18Silvaco学习19godevedit#regionreg=1mat=siliconcolor=0xffb2pattern=0x9\points=“0,00.1,00.1,10,10,0”impurityid=1region.id=1imp=Donors\x1=0x2=0.1y1=0y2=1\peak.value=1e+18ref.value=1000000000000comb.func=Multiply\rolloff.y=bothconc.func.y=Constant\rolloff.x=bothconc.func.x=Constantregionreg=2mat=siliconcolor=0xffb2pattern=0x9\points=“−0.01,10.11,10.11,2−0.01,2−0.01,1”impurityid=1region.id=2imp=acceptors\x1=−0.01x2=0.11y1=1y2=2\peak.value=1e+18ref.value=1000000000000comb.func=Multiply\rolloff.y=bothconc.func.y=Constant\rolloff.x=bothconc.func.x=ConstantDevedit编辑二极管结构的例子17:18Silvaco学习20#electroderegionreg=3name=anodemat=contactelec.id=1work.func=0\points=“0,00.1,00.1,−0.010,−0.010,0”regionreg=4name=cathodemat=contactelec.id=2work.func=0\points=“−0.01,20.11,20.11,2.01−0.01,2.01−0.01,2”#SetMeshingParametersbase.meshheight=0.1width=0.125#bound.condmax.slope=28max.ratio=300rnd.unit=0.001line.straightening=1\align.pointswhen=automatic#constr.meshmat.type=semiconductormax.angle=180max.ratio=200\max.height=1max.width=1min.height=0.001min.width=0.001#constr.mes