JESD22-A114D(HBM)

JEDECSTANDARDElectrostaticDischarge(ESD)SensitivityTestingHumanBodyModel(HBM)JESD22-A114D(RevisionofJESD22-A114C.01,March2005)MARCH2006JEDECSOLIDSTATETECHNOLOGYASSOCIATIONNOTICEJEDECstandardsandpublicationscontainmaterialthathasbeenprepared,reviewed,andapprovedthroughtheJEDECBoardofDirectorslevelandsubsequentlyreviewedandapprovedbytheJEDEClegalcounsel.JEDECstandardsandpublicationsaredesignedtoservethepublicinterestthrougheliminatingmisunderstandingsbetweenmanufacturersandpurchasers,facilitatinginterchangeabilityandimprovementofproducts,andassistingthepurchaserinselectingandobtainingwithminimumdelaytheproperproductforusebythoseotherthanJEDECmembers,whetherthestandardistobeusedeitherdomesticallyorinternationally.JEDECstandardsandpublicationsareadoptedwithoutregardtowhetherornottheiradoptionmayinvolvepatentsorarticles,materials,orprocesses.BysuchactionJEDECdoesnotassumeanyliabilitytoanypatentowner,nordoesitassumeanyobligationwhatevertopartiesadoptingtheJEDECstandardsorpublications.TheinformationincludedinJEDECstandardsandpublicationsrepresentsasoundapproachtoproductspecificationandapplication,principallyfromthesolidstatedevicemanufacturerviewpoint.WithintheJEDECorganizationthereareprocedureswherebyaJEDECstandardorpublicationmaybefurtherprocessedandultimatelybecomeanANSI/EIAstandard.Noclaimstobeinconformancewiththisstandardmaybemadeunlessallrequirementsstatedinthestandardaremet.Inquiries,comments,andsuggestionsrelativetothecontentofthisJEDECstandardorpublicationshouldbeaddressedtoJEDECattheaddressbelow,orcall(703)907-7559or©JEDECSolidStateTechnologyAssociation20062500WilsonBoulevardArlington,VA22201-3834Thisdocumentmaybedownloadedfreeofcharge;howeverJEDECretainsthecopyrightonthismaterial.Bydownloadingthisfiletheindividualagreesnottochargefororreselltheresultingmaterial.PRICE:PleaserefertothecurrentCatalogofJEDECEngineeringStandardsandPublicationsonlineat!DON’TVIOLATETHELAW!ThisdocumentiscopyrightedbyJEDECandmaynotbereproducedwithoutpermission.Organizationsmayobtainpermissiontoreproducealimitednumberofcopiesthroughenteringintoalicenseagreement.Forinformation,contact:JEDECSolidStateTechnologyAssociation2500WilsonBoulevardArlington,Virginia22201-3834orcall(703)907-7559JEDECStandardNo.22-A114DPage1TestMethodA114D(RevisionofTestMethodA114C.01)TESTMETHODA114DELECTROSTATICDISCHARGE(ESD)SENSITIVITYTESTINGHUMANBODYMODEL(HBM)(FromJEDECBoardBallotJCB-00-27,JCB-04-103,JCB-04-104,JCB-04-105,JCB-05-137,andJCB-05-138formulatedunderthecognizanceofJC-14.1CommitteeonReliabilityTestMethodsforPackagedDevices.)1ScopeThismethodestablishesastandardprocedurefortestingandclassifyingmicrocircuitsaccordingtotheirsusceptibilitytodamageordegradationbyexposuretoadefinedelectrostaticHumanBodyModel(HBM)discharge(ESD).Theobjectiveistoprovidereliable,repeatableHBMESDtestresultssothataccurateclassificationscanbeperformed.2ApparatusThistestmethodrequiresthefollowingequipment.2.1AnESDpulsesimulatorandaDeviceUnderTest(DUT)socketequivalenttothecircuitofFigure1.ThesimulatormustbecapableofsupplyingpulseswiththecharacteristicsrequiredbyFigure2andFigure3.2.2OscilloscopeTheoscilloscopeandamplifiercombinationshallhavea350MHzminimumsingle-shotbandwidthandavisualwritingspeedof4cm/nsminimum.2.3CurrentprobeThecurrentprobeshallhaveaminimumpulse-currentbandwidthof350MHz.Theprobe(transformerandcablewithanominallengthof1meter)shallhavea1GHzbandwidth,aminimumcurrentratingof12amperespeakpulse-currentcapabilityandarisetimeoflessthanonenanosecond.2.4EvaluationloadsAn18-24AWGtinnedcopperwireisrecommendedfortheshortwaveformverificationtest.Theleadlengthshouldbeasshortaspracticabletospanthedistancebetweenthetwofarthestpinsinthesocketwhilepassingthroughthecurrentprobe.Theendsofthewiremaybegroundtoapointwhereclearanceisneededtomakecontactonfine-pitchsocketpins.A500Ω+/-1%,4000V,low-inductanceresistorshallbeusedforinitialsystemcheckoutandperiodicsystemrecalibration.JEDECStandardNo.22-A114DPage2TestMethodA114D(RevisionofTestMethodA114C.01)2Apparatus(cont’d)2.5CalibrationAllapparatususedfortesterevaluationshallbecalibratedaccordingtoadocumented,traceablecalibrationsystemandinaccordancewithmanufacturer’srecommendations.Figure1—TypicalequivalentHBMESDcircuitNOTE1Theperformanceofanysimulatorisinfluencedbyitsparasiticcapacitanceandinductance.NOTE2Precautionsmustbetakenintesterdesigntoavoidrechargetransientsandmultiplepulses.NOTE3R2,usedforinitialequipmentqualificationandrequalificationasspecifiedin3.1,shallbealowinductance,4000V,500Ωresistorwith+/-1%tolerance.NOTE4StackingofDUTsocketadaptors(piggybacking)isallowedonlyifthewaveformscanbeverifiedtomeetthespecificationsinTable1.NOTE5ReversalofterminalsAandBtoachievedualpolarityisnotpermitted.NOTE6S2shallbeclosedatleast10millisecondsafterthepulsedeliveryperiodtoensuretheDUTsocketisnotleftinachargedstate.NOTE7R1,1500Ω+/-1%.NOTE8C1,100pF+/-10%(effectivecapacitance).JEDECStandardNo.22-A114DPage3TestMethodA114D(RevisionofTestMethodA11