BTS724G中文资料

BTS724GInfineonTechnologiesAG1of142003-Oct-01SmartHigh-SidePowerSwitchFourChannels:4x90mΩStatusFeedbackProductSummaryPackageOperatingVoltageVbb5.5...40VActivechannelsonefourparallelOn-stateResistanceRON90mΩ22.5mΩNominalloadcurrentIL(NOM)3.3A7.3ACurrentlimitationIL(SCr)12A12AGeneralDescription•NchannelverticalpowerMOSFETwithchargepump,groundreferencedCMOScompatibleinputanddiagnosticfeedback,monolithicallyintegratedinSmartSIPMOStechnology.•ProvidingembeddedprotectivefunctionsApplications•µCcompatiblehigh-sidepowerswitchwithdiagnosticfeedbackfor12Vand24Vgroundedloads•Alltypesofresistive,inductiveandcapacitveloads•Mostsuitableforloadswithhighinrushcurrents,soaslamps•Replaceselectromechanicalrelays,fusesanddiscretecircuitsBasicFunctions•Verylowstandbycurrent•CMOScompatibleinput•Improvedelectromagneticcompatibility(EMC)•Fastdemagnetizationofinductiveloads•Stablebehaviouratundervoltage•Wideoperatingvoltagerange•LogicgroundindependentfromloadgroundProtectionFunctionsBlockDiagram•Shortcircuitprotection•Overloadprotection•Currentlimitation•Thermalshutdown•Overvoltageprotection(includingloaddump)withexternalresistor•Reversebatteryprotectionwithexternalresistor•LossofgroundandlossofVbbprotection•Electrostaticdischargeprotection(ESD)DiagnosticFunction•Diagnosticfeedbackwithopendrainoutput•OpenloaddetectioninOFF-state•FeedbackofthermalshutdowninON-stateP-DSO-20VbbLogicChannel3Channel4GNDLoad1Load2LogicChannel1Channel2Load4Load3IN1ST1/2IN2IN3ST3/4IN4BTS724GInfineonTechnologiesAG2of142003-Oct-01Functionaldiagram.channel1OUT1overvoltageprotectionlogicinternalvoltagesupplyESDtemperaturesensorclampforinductiveloadgatecontrol+chargepumpcurrentlimitreversebatteryprotectionOpenloaddetectioncontrolandprotectioncircuitofchannel2controlandprotectioncircuitofchannel3controlandprotectioncircuitofchannel4IN1VBBGND1/2IN2IN3IN4ST3/4OUT2OUT3OUT4LOADGND3/4ST1/2BTS724GInfineonTechnologiesAG3of142003-Oct-01PinDefinitionsandFunctionsPinSymbolFunction1,10,11,12,15,16,19,20VbbPositivepowersupplyvoltage.Designthewiringforthesimultaneousmax.shortcircuitcurrentsfromchannel1to2andalsoforlowthermalresistance3IN15IN27IN39IN4Input1,2,3,4activateschannel1,2,3,4incaseoflogichighsignal18OUT117OUT214OUT313OUT4Output1,2,3,4protectedhigh-sidepoweroutputofchannel1,2,3,4.Designthewiringforthemax.shortcircuitcurrent4ST1/2Diagnosticfeedback1/2,3/4ofchannel1,2,3,48ST3/4opendrain,lowonfailure2GND1/2Groundofchip1(channel1,2)6GND3/4Groundofchip2(channel3,4)Pinconfiguration(topview)Vbb1•20VbbGND1/2219VbbIN1318OUT1ST1/2417OUT2IN2516VbbGND3/4615VbbIN3714OUT3ST3/4813OUT4IN4912VbbVbb1011VbbBTS724GInfineonTechnologiesAG4of142003-Oct-01MaximumRatingsatTj=25°CunlessotherwisespecifiedParameterSymbolValuesUnitSupplyvoltage(overvoltageprotectionseepage6)Vbb43VSupplyvoltageforfullshortcircuitprotectionTj,start=-40...+150°CVbb36VLoadcurrent(Short-circuitcurrent,seepage6)ILself-limitedALoaddumpprotection1)VLoadDump=VA+Vs,VA=13.5VRI2)=2Ω,td=400ms;IN=loworhigh,eachchannelloadedwithRL=13.5Ω,VLoaddump3)60VOperatingtemperaturerangeStoragetemperaturerangeTjTstg-40...+150-55...+150°CPowerdissipation(DC)4)Ta=25°C:(allchannelsactive)Ta=85°C:Ptot3.61.9WMaximalswitchableinductance,singlepulseVbb=12V,Tj,start=150°C4),seediagramsonpage10IL=3.3A,EAS=120mJ,0Ωonechannel:IL=4.7A,EAS=140mJ,0Ωtwoparallelchannels:IL=7.3A,EAS=160mJ,0Ωfourparallelchannels:ZL16,51918mHElectrostaticdischargecapability(ESD)IN:(HumanBodyModel)ST:outtoallotherpinsshorted:acc.MIL-STD883D,method3015.7andESDassn.std.S5.1-1993R=1.5kΩ;C=100pFVESD1.04.08.0kVInputvoltage(DC)seeinternalcircuitdiagrampage9VIN-10...+16VCurrentthroughinputpin(DC)Pulsedcurrentthroughinputpin5)Currentthroughstatuspin(DC)IINIINpIST±0.3±5.0±5.0mA1)SupplyvoltageshigherthanVbb(AZ)requireanexternalcurrentlimitfortheGNDandstatuspins(a150ΩresistorfortheGNDconnectionisrecommended.2)RI=internalresistanceoftheloaddumptestpulsegenerator3)VLoaddumpissetupwithouttheDUTconnectedtothegeneratorperISO7637-1andDIN408394)Deviceon50mm*50mm*1.5mmepoxyPCBFR4with6cm2(onelayer,70µmthick)copperareaforVbbconnection.PCBisverticalwithoutblownair.Seepage145)onlyfortestingBTS724GInfineonTechnologiesAG5of142003-Oct-01ThermalCharacteristicsParameterandConditionsSymbolValuesUnitmintypmaxThermalresistancejunction-solderingpoint6)7)eachchannel:Rthjs----15K/Wjunction–ambient6)@6cm2coolingareaonechannelactive:allchannelsactive:Rthja----4234----ElectricalCharacteristicsParameterandConditions,eachofthefourchannelsSymbolValuesUnitatTj=-40...+150°C,Vbb=12VunlessotherwisespecifiedmintypmaxLoadSwitchingCapabilitiesandCharacteristicsOn-stateresistance(VbbtoOUT);IL=2Aeachchannel,Tj=25°C:Tj=150°C:twoparallelchannels,Tj=25°C:fourparallelchannels,Tj=25°C:seediagram,page11RON--------701403517.5901804522.5mΩNominalloadcurrentonechannelactive:twoparallelchannelsactive:fourparallelchannelsactive:DeviceonPCB6),Ta=85°C,Tj≤150°CIL(NOM)3.04.36.53.34.77.3------AOutputcurrentwhileGNDdisconnectedorpulledup8);Vbb=32V,VIN=0,seediagrampage9IL(GNDhigh)----2mATurn-ontime9)INto90%VOUT:Turn-offtimeINto10%VOUT:RL=1