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ChinalntegratedCircultCIC2011·8·http//[1]。EMAX。ESDJMAX。ESDPESDPMAX[2]。ESDESDPESDPMAX=EMAX*JMAX1ESDI/OCMOSSoCESDCMOSSoCESD100102CMOSSoCSystemOnChipESDElectrostaticDischargeCMOSICESDSoCESDSoCESD。SoCESDESDESDProtectionTechnologyofCMOSSoCICSUNLei,ZHANGYing,PANLiangCECHuadaElectronicDesignCo.Ltd,Beijing,100102ChinaAbstract:ExplanationofCMOSSoCchipESDfailureformthepointoffailurepowerisproposed.VariousESDfailuremechanismsareinvestigated.ThemultipleandseparatedpowerESDprotectionmethodandwholechipESDprotectionstrategyforSoCareresearched,respectively.Keywords:SoC;ESDfailuremechanism;ESDdesignmethod39CICChinalntegratedCircult2011·8·147http//。CMOSSoCESDCMOSSoCESDCMOSSoCESD。2ESDESDI/OESD。1I/OI/O●I/OESD●I/O●I/O。2I/OESD、ICESD。●N+●SCRSiliconControlledRectifier●PMAX。3ESDESDESDvia、eFUSE[3]。3CMOSSoCESD3.1SoCESDESDI/OESDI/OESD[4]。SoCinterfacecircuitsESD。ESD。1ESD1ESDPowerClampESD2PowerClampVDD1VSS1VDD2VSS2。VDD2VSS1ESDESD2P2N2ESDESDP2N1P2。VDD1VSS2ESDESD1P1N1ESDESDP1N2N2[5][6]。P2N2VSS1VSS2VDD2VDD1ESD2VSS1VSS2。ESD1PowerClamp。。40ChinalntegratedCircultCIC2011·8·http//。SoCESDPowerClampPowerClamp。2ESDESD。3ESD。4。3ESD。P1N1ESD。ESD3ESD4ESDESD。。3VDD1VDD2VDD1VDD2CutCellCutCell。VDD1VDD2VDD1VDD2VSS1VSS2ESDVSS1VSS2。3P2N2R2R1R1R210ohmP2N21.2V4。MOSP2N2VfailIdiodeRdiode。VfailNMOSIdiode＝Vfail/RdiodeVESD＝Idiode×Rdiode＋R1＝Vfail×1＋R1/RdiodeR1＝RdiodeVESD＝2Vfail[7]。SoCESD“”“”ESDESDcontactviaI/OI/OPad。ESD3ESD。4P2N2。41CICChinalntegratedCircult2011·8·147http//“”15VDD1VSS1VDD2VSS2。2CutCell6VDD1VSS1VDD2VSS2CutCellESD[8]。CutCell。3DoubleBonding7。VSS1VSS2BondWireVSS1VSS2ESD[9]。8I/OI/OPad。I/O、。I/OPadESD。ESD。1CutCell。CutCellCutCellCutCell。2ESD。3I/O。4、。3.2SoCESDSoCESD9。1I/O、、I/O。I/OI/O。I/O2kVESD4kVESDI/O。5VDD1VSS1VDD2VSS2。6VDD1VSS1VDD2VSS2CutCell。7VSS1VSS2。8。42ChinalntegratedCircultCIC2011·8·http//。3I/OESDESD。4、MOS、MOS。。、、。5、、、via、、viaNW、、。6。71～6I/O。SSNSimultaneousSwitchingNoise[10]I/OI/O。I/OI/OESDESD。8ESDESDFoundryESDESD。ESD。9ESDESDESDESDESDESDESD。10。EMMIEmissionMicroscope、SEMScanningElectronMicroscope、OBIRCHOpticalBeamInducedResistanceChange、FIBFocusedIonBeamESD。I/OESDSoCESDI/OSoCESDESDESD、ESD、ESD。ICESDESDESDESD。9SoCESD。43CICChinalntegratedCircult2011·8·147http//。I/OI/OESDESD。I/OESD。SoCI/OI/OI/OCutCell。I/OI/O6CutCell。I/OI/OESDESDCutCellESD。10。I/OESDCutCellESD。3.2.2I/OI/OI/OI/O。I/OI/O●●●●●I/O●●ESD。I/OI/OSSNSSNI/OslewratecontrolI/Onon-slewratecontrolI/OslewratecontrolI/O。I/OI/O[11]I/OPowerClampESDI/O、SSN。1PowerClampESDI/OI/O。2I/OPowerClampI/OPowerClamp。3I/OI/OPowerClamp10SoC。44ChinalntegratedCircultCIC2011·8·http//Ω。4CMOSESD。SoCESD。SoCESD。I/O、ESD、、、10ESDI/OSoCESD。[1]CiaranJ.Brennan,JosephKozhaya,RobertProctoretal.“ESDdesignautomation&methodologytopreventCDMfailuresin130&90nmASICdesignsystems”.JournalofELECTROSTATIC.2005.113-127.[2]Dr.JackSLChen.“AdvancedESDProtectionDesignsinLVSI”..200810.19[3]STEVENH.VOLDMAN.“ESDFAILUREMECHANISMSANDMODELS”.JOHNWILEY&SONS,INC.2009.110.[4].“CMOSESD”..20065.77.[5]Ming-DouKer.“ESDProtectionDesigntoOvercomeInternalDamageonInterfaceCircuitsofaCMOSICWithMultipleSeparatedPowerPins”.IEEETRANSACTIONSONCOMPONENTSANDPACKA-GINGTECHNOLOGIES,VOL.27,NO.3,SEPTEMBER2004.445~448.[6]VladislavA.Vashchenko,AndreiShibkov.“ESDDesignforAnalogCircuits”.Springer.2011.258~260.[7].“”..010.140.[8]Ming-DouKer,Hun-HsienChang,Tung-YangChen.“ESDBUSESFORWHOLE-CHIPESDPROTECTION”.IEEE.1999.I-545~I-548.[9]KaiEsmark,HaraldGossner&WolfgangStadler.“AdvancedSimulationMethodsforESDProtectionDevelopment”.ELSEVIER.2003.52~53.[10]R.Senthinathan,J.L.Prince.“ApplicationSpecificCMOSOutputDriverCircuitDesignTechniquestoReduceSimultaneousSwitchingNoise”.IEEEJOURNALOFSOLID-STATECIRCUITS,VOL.28,NO.12,DECEMBER,1993.1383.[11]Ming-DouKer.“Whole-ChipESDProtectionDesignwithEfficientVDD-to-VSSESDClampCircuitsforSubmicronCMOSVLSI”.IEEETRANSACTIONSONELECTRONDEVICES,VOL.46,NO.1,JANUARY1999.173~183.20042007I/O。I/O、。。CIC45